ASI2N5643

2N5643 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V 1.0 mA hFE VCE = 5.0 V IC = 500 mA 5.0 --- --- COB VCB = 30 V f = 1.0 MHz 45 65 pF GP ηηηηC VCE = 28 V P OUT = 40 W f = 175 MHz VCE = 10 V IC = 200 mA f = 100 MHz 7.6 8.1 --- dB NPN SILICON RF POWER TRANSISTOR 2N5643 DESCRIPTION: The ASI 2N5643 is Designed for wideband large-signal amplifier stages in the 125 – 175 MHz range. FEATURES:

• Minimum Gain = 7.6 dB
• Output Power = 40 W
• Omnigold™ Metalization System MAXIMUM RATINGS IC 5.0 A VCBO 65 V VCEO 35 V VEBO 4.0 V PDISS 60 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θθθθJC 2.9 °C/W PACKAGE STYLE .380 4L STUD MINIMUM inches / mm .004 / 0.10 .370 / 9.40 .320 / 8.13 B C D E F G A MAXIMUM .385 / 9.78 .330 / 8.38 .130 / 3.30 .007 / 0.18 inches / mm H .090 / 2.29 .100 / 2.54 DIM .490 / 12.45.450 / 11.43 I J .750 / 19.05 .980 / 24.89 .100 / 2.54 E F D ØC B .112x45° G H J I A #8-32 UNC-2A E E C B