UFT30-28 ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ET HEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982 - 1200 • FAX (818) 765 - 3004 1/1
Specifications are subject to change without noti ce. CHARACTERISTICS T C = 25 O C SYMBOL NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS V DSS IDS = 10 mA 60 V IDSS V DS = 28 V 4.0 mA IGSS V GS = 20 V 1.0 µµA V GS V DS = 10 V I D = 25 mA 1.0 6.0 V G FS V DS = 10 V I D = 500 mA 500 mMho C ISS C OSS C RSS V DS = 28 V V GS = 0 V f = 1.0 MHz 6.0 pF P G ηηD V DD = 28 V I DQ = 25 mA P OUT = 25 W f = 400 MHz 7.0 dB NPN SILICON RF POWER TRANSISTOR UFT30 - 28 DESCRIPTION: The UFT30 - 28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. FEATURES:
- P G = 7.0 dB min. at 25 W/400 MHz
- ηηD = 60 % Typical
- Omnigold ™ Metalization System MAXIMUM RATINGS ID 5.0 A V DDS 65 V V GS ±40 V P DISS 100 W @ T C = 25 O C T J - 65 O C to +200 O C T STG - 65 O C to +150 O C θθJC 1.8 O C/W PACKAGE STYLE .380 4L FLG. ORDER CODE: ASI10666 MINIMUM inches / mm .970 / 24.64 B C D E F G A MAXIMUM .385 / 9.78 .980 / 24.89 inches / mm H .160 / 4.06 .180 / 4.57 DIM I J .240 / 6.10 .255 / 6.48 .785 / 19.94 F B G .125 Ø.125 NOM. FULL R D E C H .112 x 45° A I J .280 / 7.11 .720 / 18.29 .730 / 18.54 D S S G