ASI10600

HF8-28F ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVCBO IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V 1.0 mA hFE VCE = 5.0 V I C = 200 mA 5.0 --- --- COB VCB = 30 V f = 1.0 MHz 15 pF GP POUT VCC = 28 V P IN = 1.0 W f = 150 MHz 10 --- dB W NPN SILICON RF POWER TRANSISTOR HF8-28F DESCRIPTION: The ASI HF8-28F is Designed for FEATURES:

• PG = 21 dB min. at 8 W/30 MHz
• IMD3 = -30 dBc max. at 8 W(PEP)
• Omnigold™ Metalization System MAXIMUM RATINGS IC 1.0 A VCBO 65 V VCEO 35 V VCES 65 V VEBO 4.0 V PDISS 13.0 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC qq JC 13.5 OC/W PACKAGE STYLE .380 4L FLG ORDER CODE: ASI10600 MINIMUM inches / mm .970 / 24.64 B C D E F G A MAXIMUM .385 / 9.78 .980 / 24.89 inches / mm H .160 / 4.06 .180 / 4.57 DIM I J .240 / 6.10 .255 / 6.48 .785 / 19.94 F B G .125 Ø.125 NOM. FULL R D E C H .112 x 45° A I J .280 / 7.11 .720 / 18.29 .730 / 18.54 E C EB