CBSL1SL ASI | Alldatasheet
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice. CHARACTERISTICS TC = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 40 V BVCEO IC = 1.0 mA 28 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 24 V 0.5 mA hFE VCE = 5.0 V IC = 100 mA 20 120 --- COB VCB = 24 V f = 1.0 MHz 5.0 pF PG VCC = 24 V I CQ = 125 mA f = 960 MHz POUT = 1.0 W 10 dB NPN SILICON RF POWER TRANSISTOR CBSL1SL DESCRIPTION: The ASI CBSL1SL is Designed for Class A, Cellular Base Staion Applications up to 960 MHz. FEATURES:
- Class A Operation
- PG = 10 dB at 1.0 W/960 MHz
- Omnigold™ Metalization System MAXIMUM RATINGS IC 0.250 A VCBO 40 V VCEO 28 V VEBO 3.5 V PDISS 7.0 W @ TC = 25 O C TJ -65 O C to +200 O C TSTG -65 O C to +150 O C θθθθJC 25 O C/W PACKAGE STYLE .280 4L PILL ORDER CODE: ASI10578 MINIMUM inches / mm .004 / 0.10 .275 / 6.99 .050 / 1.27 B C D E F A MAXIMUM .285 / 7.24 .060 . 1.52 .130 / 3.30 .006 / 0.15 inches / mm 1.055 / 26.80 DIM .118 / 3.00 D E F ØB ØC A C B E E