ASF240

ASF240 ASB | Alldatasheet

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Technical content

1/6 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2011 Features Description Typical Performance Absolute Maximum Ratings

• 26.3 dB Gain at 150 MHz ·20.5 dBm P1dB at 150 MHz ·41 dBm Output IP3 at 150 MHz ·3.0 dB NF at 150 MHz ·MTTF > 100 Years ·Single Supply The ASF240, a IF gain block amplifier MMIC, has a high linearity, high gain, and high efficiency over a wide range of frequency, being suitable for use in both receiver and transmitter of telecommunication systems up to 1 GHz. The amplifier is available in an SOT-89 package and passes through the strin-gent DC, RF, and reliability tests. Product Specifications Pin Configuration Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias Application Circuit ·IF (50 ~ 500MHz) ·IF (5 ~ 30MHz) ·50 ~ 1000 MHz (75 ohm) ·5 ~ 200 MHz (75 ohm)

2/6 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2011 ASF240 5-1000 MHz MMIC Amplifier Pin No. Function 1 RF IN 2 GND 3 RF OUT / Bias Mounting Recommendation (in mm) Outline Drawing Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. ESD Classification HBM Class 1B Voltage Level: 500 V~1000 V MM Class A Voltage Level: <200 V CAUTION: ESD-sensitive device! Moisture Sensitivity Level (MSL) Level 3 at 260°C reflow ESD Classification & Moisture Sensitivity Level ASF240 Pxxxx Lot No. Part No.

3/6 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2011 ASF240 5-1000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor IF 50 ~ 500 MHz +5 V RF IN RF OUTASF240C3=100 pFC4=1 mFD1=5.6VZener Diode C1=1000 pF C2=1000 pFL1=1.2 mH Vs=5 VDR =1 W 0100200300400500051015202530 Gain (dB)Frequency (MHz)0100200300400500-20-15-10-50 S11 (dB)Frequency (MHz) 0100200300400500-20-15-10-50 S22 (dB)Frequency (MHz)0500100015002000250030003500012345 Stability FactorFrequency (MHz)

4/6 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2011 ASF240 5-1000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +6 dBm/tone separated by 1MHz. 0500100015002000250030003500012345 Stability FactorFrequency (MHz)020406080100-20-15-10-50 S22 (dB)Frequency (MHz) 020406080100-25-20-15-10-50 S11 (dB)Frequency (MHz)02040608010005101520253035 Gain (dB)Frequency (MHz) RF IN RF OUTASF240 C3=100 pFC4=1 mFD1=5.6VZener Diode L2=33 mH Vs=5 V C1=1 mF C2=1 mFL1=33 mHInternal R(L1+L2)=2.3 W Board Layout (FR4, 40x40 mm2, 0.8T) Schematic S-parameters & K-factor IF 5 ~ 30 MHz +5 V

5/6 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2011 ASF240 5-1000 MHz MMIC Amplifier . 1) OIP3 and OIP2 are measured with two tones at an output power of +5 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1+F2 Frequency. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic APPLICATION CIRCUIT S-parameters CATV ( 75 Ohm ) 50 ~ 1000 MHz +5 V 01002003004005006007008009001000051015202530 Gain (dB)Frequency (MHz)01002003004005006007008009001000-20-15-10-50 S11 (dB)Frequency (MHz) 01002003004005006007008009001000-20-15-10-50 S22 (dB)Frequency (MHz) RF IN RF OUTASF240C2=1 mFC1=1 mF L1=390 nH(Coil Inductor, Internal R=2 W)L2=56 nHR1=200 W Vs=5 V C3=100 pFC4=1 mFD1=5.6VZener Diode

6/6 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 September 2011 ASF240 5-1000 MHz MMIC Amplifier . 1) OIP3 and OIP2 are measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. 2) OIP2 is measured at F1+F2 Frequency. Board Layout (FR4, 40x40 mm2, 0.8T) Schematic APPLICATION CIRCUIT S-parameters CATV ( 75 Ohm ) 5 ~ 200 MHz +5 V 050100150200250300051015202530 Gain (dB)Frequency (MHz)050100150200250300-25-20-15-10-50 S11 (dB)Frequency (MHz) 050100150200250300-30-25-20-15-10-50 S22 (dB)Frequency (MHz) RF IN RF OUTASF240C2=0.1 mFC1=0.1 mFR1=8.2 W Vs=5 V L1=33 mHL2=33 mHC3=100 pFC4=1 mFD1=5.6VZener Diode Ceramic Inductor,Internal R(L1+L2)=3.6 W