ASF153 ASB | Alldatasheet
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Technical content
1/11 ASB Inc. sales@asb.co.kr August 2014 ASF153 1. Product Overview
1.1 General Description
ASF153, 3.3V internally matched IF gain block amplifier MMIC, has excellent input and output return loss, high linearity, and low noise over a wide range of frequency DC~1000 MHz, being suitable for use in both receiver and transmitter of telecommunication systems up to 1 GHz. The amplifier is available in a SOT89 package and passes through the stringent 100% DC & RF test via an automated test handler.
1.2 Features
22.6 dB Gain at 150 MHz 20 dBm P1dB at 150 MHz 38 dBm Output IP3 at 150 MHz 2.0 dB NF at 150 MHz MTTF > 100 Years Minimum External Matching Components Single Supply: +3.3 V
1.3 Applications
Base Station Infrastructure Repeater Telecommunication System
1.4 Package Profile & RoHS Compliance
SOT89, 4.5x4.0 mm2, surface mount RoHS-compliant ASF153 Data Sheet
3.3 V IF Gain Block Amplifier MMIC over DC~1000 MHz
2/11 ASB Inc. sales@asb.co.kr August 2014 ASF153 2. Summary on Product Performances
2.1 Typical Performance
Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 300 450 900 MHz S11 -18 -21 -20 -17 -10 dB S22 -25 -25 -25 -21 -11 dB Output IP31) 37 38 38 36 34 dBm Output P1dB 20 20 20 20 19 dBm Current 87 mA Device Voltage +3.3 V 1) OIP3 is measured with two tones at the output power of +5 dBm/tone separated by 1 MHz.
2.2 Product Specification
Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Min Typ Max Unit Frequency 150 MHz Gain 22.6 dB S11 -21 dB S22 -25 dB Noise Figure 2.0 dB Output IP3 38 dBm Output P1dB 20 dBm Current 87 mA Device Voltage +3.3 V
2.3 Pin Configuration
Pin Description Simplified Outline
1 RF_IN
2 Ground
3 RF_OUT & Bias
3/11 ASB Inc. sales@asb.co.kr August 2014 ASF153
2.4 Absolute Maximum Ratings
Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operation Junction Temperature +150 C Input RF Power (CW, 50 matched) +25 dBm
2.5 Thermal Resistance
Symbol Description Typ Unit Rth Thermal resistance from junction to lead 45 C/W
2.6 ESD Classification & Moisture Sensitivity Level
HBM Class 1B Voltage Level: 500 ~ 1000 V MM Class A Voltage Level: <200 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked)
4/11 ASB Inc. sales@asb.co.kr August 2014 ASF153 3. Application: 50 ~ 1000 MHz (IF, Vsupply = +3.3 V)
3.1 Application Circuit & Evaluation Board
Symbol Value Size Description Manufacturer ASF153 - - MMIC Amplifier ASB C1, C2 1 nF 0603 DC blocking capacitor Murata C3 100 pF 0603 Bypass capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 680 nH 0603 RF choke inductor Samsung C1 C2 ASF153 RF IN RF OUT Vdevice = +3.3 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A2
5/11 ASB Inc. sales@asb.co.kr August 2014 ASF153
3.2 Performance Table
Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 300 450 900 MHz S11 -18 -21 -20 -17 -10 dB S22 -25 -25 -25 -21 -11 dB Output IP31) 37 38 38 36 34 dBm Output P1dB 20 20 20 20 19 dBm Current 87 mA Device Voltage +3.3 V 1) OIP3 is measured with two tones at the output power of +5 dBm/tone separated by 1 MHz.
3.3 Plot of S-parameter & Stability Factor
Frequency (MHz) -60 -50 -40 -30 -20 -10 S-parameters (dB) Stability Factor, K S21 S12 S11 S22 K
6/11 ASB Inc. sales@asb.co.kr August 2014 ASF153 0 200 400 600 800 1000 Frequency (MHz) NF (dB) NF 0 2 4 6 8 10 12 Output Power (dBm) -70 -65 -60 -55 -50 -45 -40 ACLR (dBc)
20 MHz BW
10 MHz BW
3.4 Plots of Noise Figure, ACLR (for LTE) and Performances with
Note that ACLR test conditions are as follows; 1) Test Source: LTE_FDD_test model 3.1, BW: 10 MHz & 20 MHz, Test Frequency: 140 MHz 2) Test Source: LTE_FDD_test model 3.1, BW: 20 MHz, Test Frequency: 140 MHz
7/11 ASB Inc. sales@asb.co.kr August 2014 ASF153 -60 -40 -20 0 20 40 60 80 100 Temperature (°C) Current (mA) -60 -40 -20 0 20 40 60 80 100 Temperature (°C) Gain (dB) Frequency = 150 MHz -60 -40 -20 0 20 40 60 80 100 Temperature (°C) NF (dB) Frequency = 150 MHz -60 -40 -20 0 20 40 60 80 100 Temperature (°C) P1dB (dBm) Frequency = 150 MHz
8/11 ASB Inc. sales@asb.co.kr August 2014 ASF153 4. Application: 5 ~ 1000 MHz (75 CATV, Vsupply = +3.3 V)
4.1 Application Circuit & Evaluation Board
Symbol Value Size Description Manufacturer ASF153 - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 100 pF 0603 Bypass capacitor Murata C4 10 F 0603 Decoupling capacitor Murata L1, L2 1 H 1206 RF choke inductor Murata L3 4.7 H 1206 Matching inductor Murata R1 150 0603 Matching resistor Samsung C1 C2 ASF153 RF IN RF OUT Vdevice = +3.3 V PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-B2
9/11 ASB Inc. sales@asb.co.kr August 2014 ASF153
4.2 Performance Table
Supply voltage = +3.3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 5 500 1000 MHz Gain 22.3 21.5 20.0 dB S11 -10 -10 -9 dB S22 -7 -18 -10 dB Noise Figure 4.0 2.4 2.6 dB Output IP31) 29 34 32 dBm Output IP21),2) 44 51 44 dBm Output P1dB 14 18 17 dBm Current 87 mA Device Voltage +3.3 V 1) OIP3 and OIP2 are measured with two tones at the output power of +5 dBm/tone separated by 6 MHz. 2) OIP2 is measured at F1 + F2 Frequency.
4.3 Plot of S-parameter & Stability Factor
Frequency (MHz) -60 -50 -40 -30 -20 -10 S-parameters (dB) Stability Factor, K S21 S12 S11 S22 K
10/11 ASB Inc. sales@asb.co.kr August 2014 ASF153 5. Package Outline (SOT89, 4.5x4.0x1.5 mm) 6. Surface Mount Recommendation (In mm) Symbols Dimensions (In mm) MIN NOM MAX A 1.40 1.50 1.60 L 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 C 0.38 0.40 0.43 D 4.40 4.50 4.60 D1 1.40 1.60 1.75 E 3.64 --- 4.25 E1 2.40 2.50 2.60 e1 2.90 3.00 3.10 H 0.35 0.40 0.45 S 0.65 0.75 0.85 e 1.40 1.50 1.60 ASF153 Pxxxx Lot No. Part No. NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side.
11/11 ASB Inc. sales@asb.co.kr August 2014 ASF153 7. Recommended Soldering Reflow Profile (End of Datasheet) 20~40 sec 260 C 200 C 150 C 60~180 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec)