ASF130 ASB | Alldatasheet
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Technical content
1/9 ASB Inc. sales@asb.co.kr July 2014 ASF130 1. Product Overview
1.1 General Description
ASF130, 3 V internally matched IF gain block amplifier MMIC, has excellent input and output return loss, high linearity, and low noise over a wide range of frequency DC~1000 MHz, being suitable for use in both receiver and transmitter of telecommunication systems up to 1 GHz. The amplifier is available in a SOT363 package and passes through the stringent 100% DC & RF test via an automated test handle r.
1.2 Features
16.6 dB Gain at 150 MHz 17.5 dBm P1dB at 150 MHz 34 dBm Output IP3 at 150 MHz 2.5 dB NF at 150 MHz MTTF > 100 Years Minimum External Matching Components Single Supply: +3 V
1.3 Applications
Base Station Infrastructure Repeater Telecommunication System
1.4 Package Profile & RoHS Compliance
3 V IF Gain Block Amplifier MMIC over DC~1000 MHz
SOT363, 2.1x2.0 mm2, surface mount RoHS-compliant
2/9 ASB Inc. sales@asb.co.kr July 2014 ASF130 2. Summary on Product Performances
2.1 Typical Performance
Supply voltage = +3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 300 450 900 MHz Current 53 mA Device Voltage +3 V 1) OIP3 is measured with two tones at the output power of +3 dBm/tone separated by 1 MHz.
2.2 Product Specification
Supply voltage = +3 V, TA = +25 C, ZO = 50 Parameter Min Typ Max Unit Frequency 150 MHz Gain 16.6 dB S11 -19.5 dB S22 -18.0 dB Noise Figure 2.5 dB Output IP3 34 dBm Output P1dB 17.5 dBm Current 53 mA Device Voltage +3 V
2.3 Pin Configuration
Pin Description Simplified Outline 1, 2, 4, 5 Ground 3 4
3 RF_IN
6 RF_OUT & Bias
3/9 ASB Inc. sales@asb.co.kr July 2014 ASF130
2.4 Absolute Maximum Ratings
Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operation Junction Temperature +150 C Input RF Power (CW, 50 matched) +25 dBm
2.5 Thermal Resistance
Symbol Description Typ Unit Rth Thermal resistance from junction to lead 110 C/W
2.6 ESD Classification & Moisture Sensitivity Level
HBM Class 1B Voltage Level: 500 ~ 1000 V MM Class A Voltage Level: <200 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked)
4/9 ASB Inc. sales@asb.co.kr July 2014 ASF130 3. Application: 50 ~ 1000 MHz (IF, Vsupply = +3 V)
3.1 Application Circuit & Evaluation Board
Vdevice = +3 V RF OUT RF IN ASF130 Bill of Material Symbol Value Size Description Manufacturer ASF130 - - MMIC Amplifier ASB C1, C2 1 nF 0603 DC blocking capacitor Murata C3 100 pF 0603 Bypass capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 680 nH 0603 RF choke inductor Samsung PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-363-A2
5/9 ASB Inc. sales@asb.co.kr July 2014 ASF130
3.2 Performance Table
Supply voltage = +3 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 300 450 900 MHz Current 53 mA Device Voltage +3 V 1) OIP3 is measured with two tones at the output power of +3 dBm/tone separated by 1 MHz.
3.3 Plot of S-parameter & Stability Factor
Frequency (MHz) -60 -50 -40 -30 -20 -10 S-parameters (dB) Stability Factor, K S21 S12 S11 S22 K
6/9 ASB Inc. sales@asb.co.kr July 2014 ASF130
3.4 Plots of Noise Figure and Performances with Temperature
Frequency (MHz) NF (dB) NF 0 200 400 600 800 1000 Frequency (MHz) Gain (dB) -40 °C +25 °C +85 °C 0 200 400 600 800 1000 Frequency (MHz) -30 -20 -10 S11 (dB) -40 °C +25 °C +85 °C 0 200 400 600 800 1000 Frequency (MHz) -30 -20 -10 S22 (dB) -40 °C +25 °C +85 °C -60 -40 -20 0 20 40 60 80 100 Temperature (°C) Current (mA) -60 -40 -20 0 20 40 60 80 100 Temperature (°C) Gain (dB) Frequency = 150 MHz
7/9 ASB Inc. sales@asb.co.kr July 2014 ASF130 -60 -40 -20 0 20 40 60 80 100 Temperature (°C) NF (dB) Frequency = 150 MHz 0 2 4 6 8 10 12 14 Output tone power (dBm) Output IP3 (dBm) -40 °C +25 °C +85 °C Frequency = 150 MHz -60 -40 -20 0 20 40 60 80 100 Temperature (°C) P1dB (dBm) Frequency = 150 MHz
8/9 ASB Inc. sales@asb.co.kr July 2014 ASF130 4. Package Outline (SOT363, 2.1x2.0x1.0 mm) 5. Surface Mount Recommendation (In mm) 1.48 1.33 0.30 0.42 0.50 1.23 0.300.25 1.75 0.40 Symbols Dimensions (In mm) MIN NOM MAX A 0.900 1.000 1.10 A1 0.025 0.062 0.10 A2 0.875 0.937 1.00 b 0.200 0.300 0.40 C 0.100 0.125 0.15 D 1.900 2.000 2.10 F 1.150 1.250 1.35 E1 2.000 2.100 2.20 e 0.65BSC e1 1.30BSC L 0.425REF NOTE 1. The number and size of ground via ho les in a circuit board are critical for thermal and RF grounding considerations. 2. Recommend is that the ground via holes be placed on the bottom of the ground leads and exposed pad of the device for better RF and thermal performance, as shown in the drawin g at the left side.
9/9 ASB Inc. sales@asb.co.kr July 2014 ASF130 6. Recommended Soldering Reflow Profile (End of Datasheet) 20~40 sec 260 C 200 C 150 C 60~180 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec)