ASB8000 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VBR IR = 10 µA 60 V CJ VR = 10 V f = 2 - 18 GHz 0.025 0.035 pF RS IF = 10 mA f = 1.0 GHz 2.5 3.0 ΩΩΩΩ ττττ IF = 10 mA I R = 6.0 mA 40 nS trr IF = 10 mA I R = 6.0 mA 2.4 nS Lead Pull 5 gm SILICON BEAM LEAD PIN DIODE ASB8000 PACKAGE STYLE BL1 DESCRIPTION: The ASB8000 is a Silicon Beam Lead PIN Diode Designed for High Speed Switching Applications Up to 18 GHz. FEATURES INCLUDE:

  • Low Capacitance - 0.025 pF Typical
  • Low Series Resistance - 2.5 Ω Typical
  • High Beam Pulls - 5 Grams Minimum MAXIMUM RATINGS IF 100 mA VR 60 V PDISS 250 mW @ TA = 25 O C TJ -65 O C to +175 O C TSTG -65 O C to +200 O C θθθθJA 600 O C/W