AS8S512K32 AUSTIN | Alldatasheet

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& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. CS CS CS CS GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS8S512K32 and AS8S512K32A are 16 Megabit CMOS SRAM Modules organized as 512Kx32 bits. These devices achieve high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. This military temperature grade product is ideally suited for military and space applications.

FEATURES

  • Operation with single 5V supply
  • High speed: 17, 20, 25 and 35ns
  • Built in decoupling caps for low noise
  • Organized as 512Kx32 , byte selectable
  • Low power CMOS
  • TTL Compatible Inputs and Outputs
  • Future offerings 3.3V Power Supply 15 ns Ultra High Speed OPTIONS MARKINGS
  • Operating Temperature Ranges Military (-55oC to +125oC) XT Industrial (-40oC to +85oC) IT
  • Timing 17ns -17 20ns -20 25ns -25 35ns -35 45ns -45 55ns -55
  • Package Ceramic Quad Flatpack Q No.702 Pin Grid Array P No.904
  • Low Power Data Retention Mode L
  • Pinout Military (no indicator) Commercial A PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATIONS
  • SMD 5962-94611 (Military Pinout)
  • MIL-STD-883

68 Lead CQFP (Q)

Military SMD Pinout Option 512K x 32 SRAM SRAM MEMORY ARRAY For more products and information please visit our web site at www.austinsemiconductor.com

68 Lead CQFP

Commercial Pinout Option (A) I/O17 I/O18 I/O19 Vss I/O20 I/O21 I/O22 I/O23 Vcc I/O24 I/O25 I/O26 I/O27 Vss I/O28 I/O29 I/O30 I/O 14 I/O 13 I/O 12 Vss I/O 11 I/O 10 I/O 9 I/O 8 Vcc I/O 7 I/O 6 I/O 5 I/O 4 Vss I/O 3 I/O 2 I/O 1 I/O 31 Vcc A13 A12 A11 A10 I/O 0 I/O 16 A18 A17 CS4\\ CS3\\ CS2\\ CS1\\ NC Vcc NC NC OE\\ WE\\ A16 A15 A14 I/O 15 I/O 0 I/O 1 I/O 2 I/O 3 I/O 4 I/O 5 I/O 6 I/O 7 GND I/O 8 I/O 9 I/O 10 I/O 11 I/O 12 I/O 13 I/O 14 I/O 15 I/O 16 I/O 17 I/O 18 I/O 19 I/O 20 I/O 21 I/O 22 I/O 23 GND I/O 24 I/O 25 I/O 26 I/O 27 I/O 28 I/O 29 I/O 30 I/O 31 Vcc A11 A12 A13 A14 A15 A16 CS1\\ OE\\ CS2\\ A17 WE2\\ WE3\\ WE4\\ A18 NC NC NC CS3\\ GND CS4\\ WE1\\ A10 Vcc

66 Lead PGA (P)

& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. CS\\4 CS\\3 CS\\2 CS\\1 WE\\ OE\\ A0 - A18 I/O 24 - I/O 31 I/O 16 - I/O 23 I/O 8 - I/O 15 I/O 0 - I/O 7 512K x 8 512K x 8 512K x 8 512K x 8 COMMERCIAL PINOUT/BLOCK DIAGRAM CS MILITARY PINOUT/BLOCK DIAGRAM CS CS CS TRUTH TABLE MODE OE\\ CE\\ WE\\ I/O POWER Read LLH DOUT ACTIVE Write(2) XLL D IN ACTIVE Standby XHX High Z STANDBY CS CS4\\ CS3\\ CS2\\ CS1\\

& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Application Information section at the end of this datasheet for more infor- mation. DESCRIPTION SYMBOL -17 -20 -25 -35 -45 -55 UNITS NOTES Power Supply Current: Operating Icc 700 650 600 570 570 550 mA 3,13 Power Supply Current: Standby ISBT1 240 240 190 190 150 150 mA 3, 13 CMOS Standby ISBT2 80 80 80 80 80 80 mA VIN = VCC - 0.2V, or VSS +0.2V VCC=Max; f = 0Hz MAX CONDITIONS CS\\<VIL; VCC = MAX f = MAX = 1/ tRC (MIN) Outputs Open CS\\>VIH; VCC = MAX f = MAX = 1/ tRC (MIN) Outputs Open ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TA < 125oC and -40oC to +85oC; Vcc = 5V +10%) DESCRIPTION CONDITIONS SYMBOL MIN MAX UNITS NOTES Input High (logic 1) Voltage VIH 2.2 VCC+.5 V1 Input Low (logic 1) Voltage VIL -0.5 0.8 V 1,2 Input Leakage Current ADD,OE ILI1 -10 10 µA Input Leakage Current WE, CE ILI2 -10 10 µA Output(s) Disabled 0V<VOUT<VCC Output High Voltage IOH = 4.0mA V OH 2.4 V 1 Output Low Voltage IOL = 8.0mA V OL 0.4 V 1 Supply Voltage VCC 4.5 5.5 V 1 0V<VIN<VCC Output Leakage Current I/O ILO µA10-10

& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. AC TEST CONDITIONS NOTE: 1. This parameter is sampled. OH OLI ICurrent Source Current Source Vz = 1.5V (Bipolar Supply) Device Under Test Ceff = 50pf NOTES: Vz is programmable from -2V to + 7V . I OL and IOH programmable from 0 to 16 mA. Vz is typically the midpoint of VOH and VOL . IOL and IOH are adjusted to simulate a typical resistive load circuit. Test Specifications SYMBOL PARAMETER MAX UNITS CADD A0 - A18 Capacitance 50 pF COE OE\\ Capacitance 50 pF CWE, CCS WE\\ and CS\\ Capacitance 20 pF CIO I/O 0- I/O 31 Capacitance 20 pF CWE ("A" version) WE\\ Capacitance 50 pF CAPACITANCE (VIN = 0V, f = 1MHz, TA = 25oC )1 Figure 1

& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (NOTE 5) (-55 oC <TA < 125oC and -40oC to +85oC; VCC = 5V +10%) MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX READ cycle time tRC 17 20 25 35 45 55 ns Address access time tAA 17 20 25 35 45 55 ns Chip select access time tACS 17 20 25 35 45 55 ns Output hold from address change tOH 22 222 2 n s Chip select to output in Low-Z tLZCS 2 2 2 2 2 2 ns 4,6,7 Chip select to output in High-Z tHZCS 9 10 12 15 20 20 ns 4,6,7 Output enable access time tAOE 91 01 2 1 5 2 0 2 0 n s Output enable to output in Low-Z tLZOE 0 0 0 0 0 0 ns 4,6 Output disable to output in High-Z tHZOE 12 12 12 15 20 20 ns 4,6 WRITE cycle time tWC 17 20 25 35 45 55 ns Chip select to end of write tCW 15 15 17 20 25 25 ns Address valid to end of write tAW 15 15 17 20 25 25 ns Address setup time tAS 22 222 2 n s Address hold from end of write tAH 11 111 1 n s WRITE pulse width tWP1 15 15 17 20 25 25 ns WRITE pulse width tWP2 15 15 17 20 25 25 ns Data setup time tDS 12 10 12 15 20 20 ns Data hold time tDH 00 000 0 n s Write disable to output in Low-z tLZWE 2 2 2 2 2 2 ns 4,6,7 Write enable to output in High-Z tHZWE 9 11 13 15 15 15 ns 4,6,7 -45 -55 WRITE CYCLE READ CYCLE DESCRIPTION -20-17 -25SYMBOL NOTESUNITS-35

& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. READ CYCLE NO. 1 READ CYCLE NO. 2 1234 1234 1234 1234 1234 1234 12345 1 234 5 12345 ADDRESS DATA I/O PREVIOUS DATA V ALID DATA V ALID tOH tAA tRC ADDRESS tRC 12345678 12345678 12345678 12345678 12345678 1234 1 23 4 1 23 4 1 23 4 1234 12345 1 234 5 1 234 5 12345 123456789 123456789 123456789 123456789 123456789 123456 1 2345 6 1 2345 6 1 2345 6 123456 1234567 1 23456 7 1 23456 7 1234567 123456789012 123456789012 123456789012 123456789012 123456789012 1234 1 23 4 1 23 4 1 23 4 1234 12345 1 234 5 1 234 5 12345 123456789012 123456789012 123456789012 123456789012 123456789012 123456 1 2345 6 1 2345 6 1 2345 6 123456 1234567 1 23456 7 1 23456 7 1 23456 7 1234567 1234 1234 1234 1234 1234 1234 1234 1234 123 1 2 3 1 2 3 123 HIGH IMPEDANCE DATA V ALID tAA tACStLZCS tHZCS tHZOEtAOEtLZOE CS\\ OE\\ DATA I/O

& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. WRITE CYCLE NO. 2 (Write Enable Controlled) WRITE CYCLE NO. 1 (Chip Select Controlled) ADDRESS tWC 123456 123456 123456 123456 DATA V ALID tAWtAS tWP2 1 tCWCS\\ WE\\ DATA I/O tDHtDS 12345678 12345678 12345678 12345678 123456789012 123456789012 123456789012 123456789012 12345 1 234 5 1 234 5 12345 123456 1 2345 6 1 2345 6 123456 tAH ADDRESS tWC 12345678 12345678 12345678 12345678 12345678 1234 1 23 4 1 23 4 1 23 4 1234 123456 1 2345 6 1 2345 6 1 2345 6 123456 123456789012 123456789012 123456789012 123456789012 123456789012 12345 1 234 5 1 234 5 1 234 5 12345 1234567 1 23456 7 1 23456 7 1 23456 7 1234567 123456 123456 123456 123456 1234 1234 1234 12345678901234 1 234567890123 4 12345678901234 DATA V ALID tAW tCW tAS tAH tLZWE tWP1 1 tHZWE CS\\ WE\\ DATA I/O 1234 1234 1234 1234 1 23 4 1 23 4 1234 1234 1 23 4 1 23 4 1234 tDHtDS

& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7. At any given temperature and voltage condition, tHZCS , is less than tLZCS , and tHZWE is less than tLZWE . 8. WE\\ is HIGH for READ cycle. 9. Device is continuously selected. Chip selects and output enable are held in their active state. 10. Address valid prior to or coincident with latest occurring chip enable. 11. t RC = READ cycle time. 12. Chip enable (CS\\) and write enable (WE\\) can initiate and terminate a WRITE cycle. 13. I CC is for 32 bit mode. NOTES 1. All voltages referenced to VSS (GND). 2. -2V for pulse width <20ns. 3. I CC is dependent on output loading and cycle rates. The specified value applies with the outputs 4. This parameter guaranteed but not tested. 5. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 6. t HZCS , tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2. Transition is measured +/- 200 mV typical from steady state voltage, allowing for actual tester RC time constant. RC(MIN) unloaded, and f= H Z.t LOW V CC DATA RETENTION WAVEFORM LOW POWER CHARACTERISTICS (L Version Only) /G01/G02/G03/G04/G05/G06/G07/G08/G06/G09/G0A /G03/G0B/G0C/G0D/G09/G0E /G0C/G06/G0A /G0C/G0F/G10 /G11/G0A/G06/G08/G03 /G0A/G09/G08/G02/G03 /G01 /G01/G01 /G03/G04/G05 /G06/G07/G08/G07/G09/G08/G0A/G04/G09 /G0B/G0C/G08/G0C /G01 /G02/G03 /G0D/G01 /G01 /G01/G01 /G0E/G0D /G01 /G0F /G01/G01/G02/G03 /G0D/G10 /G11/G12 /G01 /G01/G01 /G0E/G13 /G01 /G0F /G01/G01/G02/G03 /G0D/G14 /G11/G12 /G15/G16/G0A/G17 /G0B/G07/G18/G07/G19/G07/G1A/G08 /G08/G04 /G0B/G0C/G08/G0C /G06/G07/G08/G07/G09/G08/G0A/G04/G09 /G1B/G0A/G11/G07 /G08 /G01/G02/G03 /G10/G09 /G18 /G1C /G1D/G17/G07/G05/G0C/G08/G0A/G04/G09 /G06/G07/G1A/G04/G1E/G07/G05/G1F /G1B/G0A/G11/G07 /G08 /G03 /G08 /G03/G01 /G09/G18 /G1C/G20/G21/G21 /G0B/G0C/G08/G0C /G06/G07/G08/G07/G09/G08/G0A/G04/G09 /G15/G22/G05/G05/G07/G09/G08 /G12/G19/G19 /G0F/G09/G17/G22/G08/G18 /G23 /G01/G1A/G1A /G24 /G10/G25/G0D/G01 /G04/G05 /G01/G18/G18 /G24 /G10/G25/G0D/G01/G20 /G15/G26/G27 /G0E /G01/G1A/G1A /G24 /G10/G25/G0D/G01 /G04/G09/G0A/G01/G06/G08/G06/G09/G0A/G03 123456789012345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 12345 1 234 5 1 234 5 1 234 5 1 234 5 1 234 5 1 234 5 12345 12345678 1 234567 8 1 234567 8 1 234567 8 1 234567 8 1 234567 8 1 234567 8 12345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 123456789012345678 12345 1 234 5 1 234 5 1 234 5 1 234 5 1 234 5 1 234 5 12345 12345678 1 234567 8 1 234567 8 1 234567 8 1 234567 8 1 234567 8 1 234567 8 12345678 DATA RETENTION MODE 4.5V 4.5V V DR >2V V DR tCDR tR V CC CS\\ 1-4

& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. MECHANICAL DEFINITIONS* ASI Case #702 (Package Designator Q) SMD 5962-94611, Case Outline M *All measurements are in inches. 4 x D2 4 x D1 D b e MIN MAX A 0.123 0.200 A1 0.118 0.186 A2 0.000 0.020 B b 0.013 0.017 D D1 0.870 0.890 D2 0.980 1.000 E 0.936 0.956 e R 0.005 --- L1 0.035 0.045 SYMBOL

0.800 BSC

0.050 BSC

0.010 REF

A E DETAIL A 1o - 7o R B

& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. MECHANICAL DEFINITIONS* ASI Case #904 (Package Designator P ) SMD 5962-94611, Case Outline T *All measurements are in inches. 4 x D Pin 66 e Pin 11 Pin 1 (identified by 0.060 square pad) Pin 56 A L φb e φb1 MIN MAX A 0.144 0.181 A1 0.025 0.035 φb 0.016 0.020 φb1 0.045 0.055 D 1.065 1.085 D1/E1 e L 0.145 0.155

0.600 TYP

0.100 TYP

1.000 TYP

& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Device Number Options Package Type Speed ns Options Process AS8S512K32 A Q -17 L /* AS8S512K32 A Q -20 L /* AS8S512K32 A Q -25 L /* AS8S512K32 A Q -35 L /* AS8S512K32 A Q -45 L /* AS8S512K32 A Q -55 L/ * Device Number Options Package T ype Speed ns Options Process AS8S512K32 A P -17 L /* AS8S512K32 A P -20 L /* AS8S512K32 A P -25 L /* AS8S512K32 A P -35 L /* AS8S512K32 A P -45 L /* AS8S512K32 A P -55 L/ * EXAMPLE: AS8S512K32Q-25L/XT EXAMPLE: AS8S512K32AP-25/XT

ORDERING INFORMATION

*AVAILABLE PROCESSES IT = Industrial Temperature Range -40oC to +85oC XT = Extended Temperature Range -55 oC to +125oC 833C = Full Military Processing -55 oC to +125oC **DEFINITION OF OPTIONS A = Commercial Pinout no indicator = Military Pinout L = Low Power Data Retention Mode

& AS8S512K32A Austin Semiconductor, Inc. AS8S512K32 & AS8S512K32A Rev. 3.1 12/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. ASI TO DSCC PART NUMBER CROSS REFERENCE Package Designator Q ASI Part # SMD Part # AS8S512K32Q-17L/883C 5962-9461110HMA AS8S512K32Q-17L/883C 5962-9461110HMC AS8S512K32Q-20L/883C 5962-9461109HMA AS8S512K32Q-20L/883C 5962-9461109HMC AS8S512K32Q-25L/883C 5962-9461108HMA AS8S512K32Q-25L/883C 5962-9461108HMC AS8S512K32Q-35L/883C 5962-9461107HMA AS8S512K32Q-35L/883C 5962-9461107HMC AS8S512K32Q-45L/883C 5962-9461106HMA AS8S512K32Q-45L/883C 5962-9461106HMC AS8S512K32Q-55L/883C 5962-9461105HMA AS8S512K32Q-55L/883C 5962-9461105HMC AS8S512K32Q-17/883C 5962-9461116HMA AS8S512K32Q-17/883C 5962-9461116HMC AS8S512K32Q-20/883C 5962-9461115HMA AS8S512K32Q-20/883C 5962-9461115HMC AS8S512K32Q-25/883C 5962-9461114HMA AS8S512K32Q-25/883C 5962-9461114HMC AS8S512K32Q-35/883C 5962-9461113HMA AS8S512K32Q-35/883C 5962-9461113HMC AS8S512K32Q-45/883C 5962-9461112HMA AS8S512K32Q-45/883C 5962-9461112HMC AS8S512K32Q-55/883C 5962-9461111HMA AS8S512K32Q-55/883C 5962-9461111HMC Package Designator P ASI Part # SMD Part # AS8S512K32P-17L/883C 5962-9461110HTA AS8S512K32P-17L/883C 5962-9461110HTC AS8S512K32P-20L/883C 5962-9461109HTA AS8S512K32P-20L/883C 5962-9461109HTC AS8S512K32P-25L/883C 5962-9461108HTA AS8S512K32P-25L/883C 5962-9461108HTC AS8S512K32P-35L/883C 5962-9461107HTA AS8S512K32P-35L/883C 5962-9461107HTC AS8S512K32P-45L/883C 5962-9461106HTA AS8S512K32P-45L/883C 5962-9461106HTC AS8S512K32P-55L/883C 5962-9461105HTA AS8S512K32P-55L/883C 5962-9461105HTC AS8S512K32P-17/883C 5962-9461116HTA AS8S512K32P-17/883C 5962-9461116HTC AS8S512K32P-20/883C 5962-9461115HTA AS8S512K32P-20/883C 5962-9461115HTC AS8S512K32P-25/883C 5962-9461114HTA AS8S512K32P-25/883C 5962-9461114HTC AS8S512K32P-35/883C 5962-9461113HTA AS8S512K32P-35/883C 5962-9461113HTC AS8S512K32P-45/883C 5962-9461112HTA AS8S512K32P-45/883C 5962-9461112HTC AS8S512K32P-55/883C 5962-9461111HTA AS8S512K32P-55/883C 5962-9461111HTC