AS8S128K32P-20/XT

AS8S128K32_05 AUSTIN | Alldatasheet

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Technical content

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc.

FEATURES

• Access times of 15, 17, 20, 25, 35, and 45 ns
• Built in decoupling caps for low noise operation
• Organized as 128K x32; User configured as 256Kx16 or 512K x8
• Operation with single 5 volt supply
• Low power CMOS
• TTL Compatible Inputs and Outputs
• 2V Data Retention, Low power standby OPTIONS MARKINGS
• Timing 15ns -15 17ns -17 20ns -20 25ns -25 35ns -35 45ns -45
• Package Ceramic Quad Flatpack Q No. 702 Ceramic Quad Flatpack Q1 Pin Grid Array -8 Series P No. 802 Pin Grid Array -8 Series PN No. 802 NOTE: PN indicates a no connect on pins 8, 21, 28, 39 GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS8S128K32 is a 4 Mega- bit CMOS SRAM Module organized as 128Kx32-bits and user configurable to 256Kx16 or 512Kx8. The AS8S128K32 achieves high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. The military temperature grade product is suited for mili- tary applications. The AS8S128K32 is offered in a ceramic quad flatpack mod- ule per SMD-5962-95595 with a maximum height of 0.140 inches. This module makes use of a low profile, mutlichip module de- sign. This device is also offered in a 1.075 inch square ceramic pin grid array per SMD 5692-93187, which has a maximum height of 0.195 inches. This package is also a low profile, multi-chip module design reducing height requirements to a minimum. AVAILABLE AS MILITARY SPECIFICATIONS
• SMD 5962-95595: -Q
• SMD 5962-93187: -P or -PN
• MIL-STD-883 I/O 0 - I/O 7 I/O 16 - I/O 23 I/O 24 - I/O 31 I/O 8 - I/O 23 WE2 A0 - 16 OE WE1 CE1 CE2 CE3 CE4 WE3 WE4 128K x 8 128K x 8 128K x 8 128K x 8 128K x 32 SRAM SRAM MEMORY ARRAY PIN ASSIGNMENT (Top View)

66 Lead PGA- Pins 8, 21, 28, 39 are no connects (PN)

66 Lead PGA- Pins 8, 21, 28, 39 are grounds (P)

68 Lead CQFP (Q & Q1)

For more products and information please visit our web site at www.austinsemiconductor.com

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under “Absolute Maxi- mum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Application Information section at the end of this datasheet for more infor- mation. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55°C<TA<125°C; Vcc = 5v ±10%) /G01/G02/G03/G02/G04/G05/G06/G05/G03 /G07/G08/G09/G0A/G0B/G06/G0B/G08/G09/G0C /G0C/G0D/G04/G0E/G08/G0F /G04/G0B/G09 /G04/G02/G10 /G11/G09/G0B/G06/G0C /G09/G08/G06/G05/G0C /G01/G02/G03/G04/G05 /G07/G08/G09/G0A /G0B/G0C/G0D/G09/G08/G0E /G0F/G10 /G11/G0D/G12/G05/G13/G09/G14 /G11 /G01/G02 /G15/G16/G15 /G11 /G03/G03 /G17/G18/G16/G19 /G11/G0F /G01/G02/G03/G04/G05 /G0C/G0D/G1A /G0B/G0C/G0D/G09/G08/G0E /G18/G10 /G11/G0D/G12/G05/G13/G09/G14 /G11 /G01/G04 /G1B/G18/G16/G19 /G18/G16/G1C /G11 /G0F/G1D /G15 /G01/G1E/G1F/G20/G21 /G0C/G22/G23/G24/G23/G25/G22 /G26/G20/G27/G27/G22/G1E/G21 /G01/G02/G02/G03 /G05/G06 /G28 /G11/G29/G11 /G01/G05 /G29/G11 /G03/G03 /G01 /G04/G06 /G1B/G0F/G18 /G1B/G0F/G18 µΑ /G01/G1E/G1F/G20/G21 /G0C/G22/G23/G24/G23/G25/G22 /G26/G20/G27/G27/G22/G1E/G21 /G07/G06/G03 /G08/G06 /G28 /G11/G29/G11 /G01/G05 /G29/G11 /G03/G03 /G01 /G04/G07 /G1B/G19 /G19 µΑ /G28/G20/G21/G1F/G20/G21 /G0C/G22/G23/G24/G23/G25/G22 /G26/G20/G27/G27/G22/G1E/G21 /G09/G0A/G05 /G28/G04/G05/G03/G04/G05/G2A/G0B/G2A/G10 /G2B/G08/G2A/G13/G2C/G12/G14/G2D /G28 /G11/G29/G11 /G08/G09/G0A /G29/G11 /G03/G03 /G01 /G04/G08 /G1B/G19 /G19 µΑ /G28/G04/G05/G03/G04/G05 /G07/G08/G09/G0A /G11/G0D/G12/G05/G13/G09/G14 /G01 /G08/G02 /G2E /G1B/G2F/G16/G18/G30/G23 /G11 /G08/G02 /G15/G16/G2F /G1B/G1B /G11 /G0F /G28/G04/G05/G03/G04/G05 /G0C/G0D/G1A /G11/G0D/G12/G05/G13/G09/G14 /G01 /G08/G04 /G2E /G1C/G16/G18/G30/G23 /G11 /G08/G04 /G1B/G1B /G18/G16/G2F /G11 /G0F /G31/G04/G03/G03/G12/G32 /G11/G0D/G12/G05/G13/G09/G14 /G11 /G03/G03 /G2F/G16/G19 /G19/G16/G19 /G11 /G0F CONDITIONS SYM -15 -17 -20 -25 -35 -45 UNITS NOTES CE\\<VIL; VCC=MAX f = MAX = 1/tRC (MIN) Outputs Open Icc 700 650 600 560 520 500 mA 3, 13 (1) CE\\>VIH; VCC=MAX f = MAX = 1/tRC (MIN) Outputs Open ISBT1 280 220 200 180 160 150 mA (1) CE\\ = OE\\ = VIH; CMOS Compatible; VCC = MAX f = 5 MHz ISBT2 100 80 80 60 60 60 mA (1) CE\\ > Vcc -0.2V; Vcc = MAX VIL < Vss +0.2V; VIH > VCC -0.2V; f = 0 Hz ISBC1 40 40 40 40 40 40 mA (2) CE\\ > Vcc -0.2V; Vcc = MAX VIL < Vss +0.2V; VIH > Vcc -0.2V; f = 0 Hz "L" Version Only ISBC2 24 24 24 24 24 24 mA (2) MAX Power Supply Current: Operating PARAMETER Power Supply Current: Standby NOTE: 1) Address switching sequence A, A+1, A+2, etc. 2) 1/2 input at HIGH, 1/2 input at LOW.

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. AC TEST CONDITIONS TEST SPECIFICATIONS TRUTH TABLE MODE OE\\ CE\\ WE\\ I/O POWER Read L L H Q ACTIVE Write X L L D ACTIVE Standby X H X HIGH Z STANDBY Not Selected H L H HIGH Z ACTIVE OH OLI ICurrent Source Current Source Vz = 1.5V (Bipolar Supply) Device Under Test Ceff = 50pf NOTES: Vz is programable from -2V to + 7V . IOL and IOH programmable from 0 to 16 mA. Vz is typically the midpoint of VOH and VOL. IOL and IOH are adjusted to simulate a typical resistive load circuit. SYMBOL PARAMETER MA X UNITS NOTES CADD A0 - A18 Capacitance 40 pF 4 COE OE\\ Capacitance 40 pF 4 CWE, CCE WE\\ and CE\\ Capacitance 20 pF 4 CIO I/O 0- I/O 31 Capacitance 20 pF 4 Figure 1 CAPACITANCE TABLE (VIN = 0V, f = 1 MHz, T A = 25oC)

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55°C≤TA≤125°C; Vcc = 5v ±10%) SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES READ CYCLE READ cycle time tRC 15 17 20 25 35 45 ns Address access time tAA 15 17 20 25 35 45 ns Chip enable access time tACE 15 17 20 25 35 45 ns Output hold from address change tOH 22 2 2 2 2 n s Chip enable to output in Low-Z tLZCE 2 2 2 2 2 2 ns 4, 6, 7 Chip disable to output in High-Z tHZCE 7 8 9 10 14 15 ns 4, 6, 7 Chip enable to power-up time tPU 00 0 0 0 0 4 Chip disable to power-down time tPD 15 17 20 25 35 45 4 Output enable access time tAOE 6 7 7 8 12 12 ns Output enable to output in Low-Z tLZOE 0 0 0 0 0 0 ns 4, 6 Output disable to output in High-Z tHZOE 6 7 7 9 12 12 ns 4, 6, 7 WRITE CYCLE WRITE cycle time tWC 15 17 20 25 35 45 ns Chip enable to end of write tCW 12 12 15 17 20 22 ns Address valid to end of write tAW 12 12 15 17 20 22 ns Address setup time tAS 00 0 0 0 0 n s Address hold from end of write tAH 11 1 1 1 1 n s WRITE pulse width tWP1 12 1 12 1 15 17 20 20 ns WRITE pulse width tWP2 12 1 12 1 15 17 20 20 ns Data setup time tDS 8 9 10 12 15 15 ns Data hold time tDH 11 1 1 1 1 n s Write disable to output in Low-z tLZWE 2 2 2 2 2 2 ns 4, 6, 7 Write enable to output in High-Z tHZWE 7 9 10 11 14 15 ns 4, 6, 7 -35 -45DESCRIPTION -20 -25-17-15 NOTES: 1) For OE\\ = HIGH condition. For OE\\ = LOW condition tWP1 = tWP2 = 15 ns MIN.

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. 7. At any given temperature and voltage condition, t HZCE, is less than t LZCE, and tHZWE is less than t LZWE. 8. ?W/E is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enable are held in their active state. 10. Address valid prior to or coincident with latest occurring chip enable. 11. t RC= READ cycle time. 12. Chip enable (?C/E) and write enable (?W/E) can initiate and terminate a WRITE cycle. 13. 32 bit operation NOTES 1. All voltages referenced to VSS (GND). 2. -3v for pulse width <20ns. 3. I CC is dependent on output loading and cycle rates. The specified value applies with the outputs 4. This parameter is sampled. 5. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 6. t HZCE, tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2. Transition is measured +/- 200 mV typical from steady state coltage, allowing for actual tester RC time constant. open, and f= HZ.tRC(MIN) LOW VCC DATA RETENTION WAVEFORM tRtCDR DATA RETENTION MODEDATA RETENTION MODE VDR VDR Vcc CE\\ 4.5V 4.5V >2V VIH VIL DATA RETENTION ELECTRICAL CHARACTERISTICS DESCRIPTION SYMBOL MIN MAX UNITS NOTES VCC for Retention Data VDR 2- -V CE\\ > VCC - 0.2V V CC = 2.0V I CCDR -- 6 mA VIN > VCC - 0.2V V CC = 3V I CCDR -- 11.6 mA Chip Deselect to Data Retention Time tCDR 0- - n s 4 Operation Recovery Time tR tRC ns 4, 11 Data Retention Current CONDITIONS

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. READ CYCLE NO. 2(7,8,10) READ CYCLE NO. 1(8,9) tAA tOH tRCtRC PREVIOUS DATA VALID VALID DATA VALID ADDRESS DQ tPD tPU tHZCEtACE tLZCE tHZOE tLZOE tAOE tRCtRC DATA VALID CE\\ OE\\ DQ Icc

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. WRITE CYCLE NO. 1 (Chip Enable Controlled) WRITE CYCLE NO. 2 (Write Enable Controlled) tDHtDS tWP1tWP1 tAH tCW tAW tCWtAS tWCtWC HIGH Z DATA VAILD ADDRESS CE\\ WE\\ D Q tLZWE tHZWE tDHtDS tWP2tWP2tAS tCW tAH tAW tCW tWCtWC DATA VALID ADDRESS VALIDADDRESS CE\\ WE\\ D Q

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #702 (Package Designator Q) SMD 5962-95595, Case Outline M *All measurements are in inches. MIN MAX A 0.123 0.200 A1 0.118 0.186 A2 0.005 0.015 B b 0.013 0.017 D D1 0.870 0.890 D2 0.980 1.000 E 0.936 0.956 e R L1 0.035 0.045

0.010 TYP

0.800 BSC

0.050 BSC

0.010 REF

A SEE DETAIL A DETAIL A 1o - 7 o R B D b e

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case (Package Designator Q1) SMD 5962-95595, Case Outline A *All measurements are in inches. MIN MAX A --- 0.200 A1 0.054 --- b 0.013 0.017 B c 0.009 0.012 D/E 0.980 1.000 D1/E1 0.870 0.8 90 D2/E2 e L 0.035 0.045 R SYMBOL SMD SPECIFICATIONS

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* *All measurements are in inches. ASI Case #802 (Package Designator P & PN) SMD 5962-93187, Case Outline 4 and 5 MIN MAX A 0.135 0.195 A1 0.025 0.035 φb 0.016 0.020 φb1 0.045 0.055 φb2 0.065 0.075 D 1.064 1.086 D1/E1 e L 0.145 0.155

0.600 BSC

0.100 BSC

1.000 BSC

A L φb e φb1 4 x D Pin 66 e Pin 11 Pin 1 (identified by 0.060 square pad) Pin 56 φb2

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc.

ORDERING INFORMATION

*AVAILABLE PROCESSES IT = Industrial Temperature Range -40 oC to +85oC XT = Extended Temperature Range -55 oC to +125oC 883C = Full Military Processing -55 oC to +125oC PACKAGE NOTES P = Pins 8, 21, 28, and 39 are grounds. PN = Pins 8, 21, 28, and 39 are no connects. Device Number Package Type Speed ns Process Device Number Package Type Speed ns Process AS8S128K32 Q -15 /* AS8S128K32 Q1 -15 /* AS8S128K32 Q -17 /* AS8S128K32 Q1 -17 /* AS8S128K32 Q -20 /* AS8S128K32 Q1 -20 /* AS8S128K32 Q -25 /* AS8S128K32 Q1 -25 /* AS8S128K32 Q -35 /* AS8S128K32 Q1 -35 /* AS8S128K32 Q -45 /* AS8S128K32 Q1 -45 /* Device Number Package Type Speed ns Process AS8S128K32 AS8S128K32 P PN -15 -15 AS8S128K32 AS8S128K32 P PN -17 -17 AS8S128K32 AS8S128K32 P PN -20 -20 AS8S128K32 AS8S128K32 P PN -25 -25 AS8S128K32 AS8S128K32 P PN -35 -35 AS8S128K32 AS8S128K32 P PN -45 -45 EXAMPLE: AS8S128K32Q-25/XT EXAMPLE: AS8S128K32PN-20/883C EXAMPLE: AS8S128K32Q1-15/IT

Rev. 4.1 06/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. ASI TO DSCC PART NUMBER CROSS REFERENCE ASI Part # SMD Part # AS8S128K32Q-55/883C 5962-9559505HMA AS8S128K32Q-55/883C 5962-9559505HMC AS8S128K32Q-45/883C 5962-9559506HMA AS8S128K32Q-45/883C 5962-9559506HMC AS8S128K32Q-35/883C 5962-9559507HMA AS8S128K32Q-35/883C 5962-9559507HMC AS8S128K32Q-25/883C 5962-9559508HMA AS8S128K32Q-25/883C 5962-9559508HMC AS8S128K32Q-20/883C 5962-9559509HMA AS8S128K32Q-20/883C 5962-9559509HMC AS8S128K32Q-17/883C 5962-9559510HMA AS8S128K32Q-17/883C 5962-9559510HMC ASI Part # SMD Part # AS8S128K32Q-55/883C 5962-9559512HMA AS8S128K32Q-55/883C 5962-9559512HMC AS8S128K32Q-45/883C 5962-9559513HMA AS8S128K32Q-45/883C 5962-9559513HMC AS8S128K32Q-35/883C 5962-9559514HMA AS8S128K32Q-35/883C 5962-9559514HMC AS8S128K32Q-25/883C 5962-9559515HMA AS8S128K32Q-25/883C 5962-9559515HMC AS8S128K32Q-20/883C 5962-9559516HMA AS8S128K32Q-20/883C 5962-9559516HMC AS8S128K32Q-17/883C 5962-9559517HMA AS8S128K32Q-17/883C 5962-9559517HMC Please note, -15 not currently available on the SMD's. ASI Part # SMD Part # AS8S128K32Q1-55/883C 5962-9559505HAA AS8S128K32Q1-55/883C 5962-9559505HAC AS8S128K32Q1-45/883C 5962-9559506HAA AS8S128K32Q1-45/883C 5962-9559506HAC AS8S128K32Q1-35/883C 5962-9559507HAA AS8S128K32Q1-35/883C 5962-9559507HAC AS8S128K32Q1-25/883C 5962-9559508HAA AS8S128K32Q1-25/883C 5962-9559508HAC AS8S128K32Q1-20/883C 5962-9559509HAA AS8S128K32Q1-20/883C 5962-9559509HAC AS8S128K32Q1-17/883C 5962-9559510HAA AS8S128K32Q1-17/883C 5962-9559510HAC ASI Part # SMD Part # AS8S128K32Q1-55/883C 5962-9559512HAA AS8S128K32Q1-55/883C 5962-9559512HAC AS8S128K32Q1-45/883C 5962-9559513HAA AS8S128K32Q1-45/883C 5962-9559513HAC AS8S128K32Q1-35/883C 5962-9559514HAA AS8S128K32Q1-35/883C 5962-9559514HAC AS8S128K32Q1-25/883C 5962-9559515HAA AS8S128K32Q1-25/883C 5962-9559515HAC AS8S128K32Q1-20/883C 5962-9559516HAA AS8S128K32Q1-20/883C 5962-9559516HAC AS8S128K32Q1-17/883C 5962-9559517HAA AS8S128K32Q1-17/883C 5962-9559517HAC ASI Part # SMD Part # AS8S128K32P-55/883C 5962-9318705H5A AS8S128K32P-55/883C 5962 -9318705H5C AS8S128K32P-45/883C 5962-9318706H5A AS8S128K32P-45/883C 5962 -9318706H5C AS8S128K32P-35/883C 5962-9318707H5A AS8S128K32P-35/883C 5962 -9318707H5C AS8S128K32P-25/883C 5962-9318708H5A AS8S128K32P-25/883C 5962 -9318708H5C AS8S128K32P-20/883C 5962-9318709H5A AS8S128K32P-20/883C 5962 -9318709H5C AS8S128K32P-17/883C 5962-9318710H5A AS8S128K32P-17/883C 5962 -9318710H5C ASI Part # SMD Part # AS8S128K32PN-55/883C 5962-9318705H4A AS8S128K32PN-55/883C 5962- 9318705H4C AS8S128K32PN-45/883C 5962-9318706H4A AS8S128K32PN-45/883C 5962- 9318706H4C AS8S128K32PN-35/883C 5962-9318707H4A AS8S128K32PN-35/883C 5962- 9318707H4C AS8S128K32PN-25/883C 5962-9318708H4A AS8S128K32PN-25/883C 5962- 9318708H4C AS8S128K32PN-20/883C 5962-9318709H4A AS8S128K32PN-20/883C 5962- 9318709H4C AS8S128K32PN-17/883C 5962-9318710H4A AS8S128K32PN-17/883C 5962- 9318710H4C