AS28C010

AS28C010 AUSTIN | Alldatasheet

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EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. For more products and information please visit our web site at www.austinsemiconductor.com 128K x 8 EEPROM EEPROM Memory

5 Volt, Byte Alterable

FEATURES

z Access speed: 120, 150, 200, and 250ns z Data Retention: 100 Years z Low power, active current: 50mA,standby current: 500uA z Single +5V (+10%) power supply z Data Polling and Toggle z Erase/Write Endurance (10,000 byte mode / 100,000 page mode) z Software Data protection Algorithm z Automatic , Self-Timed Byte Write z Automatic Programming: Automatic Page Write: 10ms (MAX) OPTIONS MARKINGS z Timing 120ns access -12 150ns access -15 200ns access -20 250ns access -25 z Packages Ceramic Flat Pack F CerDIP, 600 mil CW z Operating Temperature Ranges -Military (-55oC to +125oC) XT -Industrial (-40oC to +85oC) IT -Full Military Class M Processing 883C *NOTE: Package lid is connected to ground (Vss). GENERAL DESCRIPTION The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS28C010 is capable of in system electrical Byte and Page reprogrammability. The AS28C010 achieves high speed access, low power consumption, and a high level of reliability by employing advanced CMOS process and circuitry technology. This device has a 256-Byte Page Programming function to make its erase and write operations faster. The AS28C010 features Data Polling and a toggle signal to indicate completion of erase and program- ming operations. This EEPROM provides several levels of data protection., in addition to noise protection on the WE signal and write inhibit during power on and off. Software data protection is implemented using JEDEC Optional Standard algorithm. The AS28C010 is designed for high reliability in the most demanding applications. Data retention is specified for 100 years and erase/write endurance is guaranteed to a minimum of 100,000 cycles in the Page Mode and 10,000 cycles in the Byte Mode. PIN ASSIGNMENT (Top View) 32-Pin CFP (F), 32-Pin CerDIP (CW) NC A16 A15 A12 I/O 0 I/O 1 I/O 2 Vss Vcc WE\\ NC A14 A13 A11 OE\\ A10 CE\\ I/O 7 I/O 6 I/O 5 I/O 4 I/O 3

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55 oC < TA < 125oC; Vcc = 5V +10%) PARAMETER CONDITION SYMBOL MIN MA X UNITS Input High (Logic 1) Voltage1 VIH 2.0 VCC + 1.0V V Input Low (Logic 0) Voltage1 VIL -1.0 0.8 V Input Leakage Current VIN = VSS to VCC ILI 10 P$ Output Leakage Current VOUT =VSS to Vcc, CE\\=VIH ILO 10 P$ Output High Voltage IOH = -400 PA VOH 2.4 V Output Low Voltage IOL = 2.1 mA VOL 0.4 V Notes: 1) VIL min. and VIH max. are for reference only and are not tested. MAX PARAMETER CONDITIONS SYM -12 -15 -20 -25 UNITS NOTES Power Supply Current: Operating IOUT=OmA, Vcc = 5.5V Cycle=MIN ICC3 100 100 80 80 mA Power Supply Current: Standby CE\\=Vcc, Vcc = 5.5V I CC1 500 500 500 500 PA CE\\=VIH, Vcc = 5.5V I CC2 3333 m A

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. MODE SELECTION MODE CE\\ OE\\ WE\\ I/O READ VIL VIL VIH DOUT STANDBY VIH X X High-Z WRITE VIL VIH VIL DIN DESELECT VIL VIH VIH High-Z XX VIH --- X VIL X --- DATA POLLING VIL VIL VIH Data Out (I/O7) WRITE INHIBIT Parameter Min. Max. Units Endurance 10,000 Cycles Per Byte Endurance 100,000 Cycles Per Page Data Retention 100 Years ENDURANCE AND DATA RETENTION Symbol Paramete r Max. Units tPUR (2) Power-up to Read Operation 100 Ps tPUW (2) Power-up to Write Operation 5 ms POWER-UP TIMING Input Pulse Levels 0V to 3V Input Rise and Fall Times 10ns Input and Output Timing Levels 1.5V A.C. CONDITIONS OF TEST CAPACITANCE TA=+25oC, f= 1MHZ, V CC=5V PARAMETER SYMBOL MA X UNITS Test Conditions Input Capacitance CIN (2) 10 pF VIN=0V Input / Output Capactiance CI/O (2) 10 pF VI/O=0V EQUIVALENT A.C. LOAD CURRENT SYMBOL TABLE Notes: (2) This parameter is periodically sampled and not 100% tested.

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION (-55 oC < TC < 125oC; Vcc = 5V +10%) Test Conditions z Input Pulse Levels: 0.0V to 3.0V z Input rise and fall times: < 20ns z Output Load: 1 TTL Gate +100pF (including scope and jig) z Reference levels for measuring timing: 1.5V , 1.5V MIN MA X MIN MA X MIN MA X MIN MA X tRC Read Cycle Time 120 150 200 250 ns tCE Chip Enable Access Time 120 150 200 250 ns tAA Address Access Time 120 150 200 250 ns tOE Output Enable Access Time 50 50 50 50 ns tLZ (3) CE\\ LOW to Active Output 0 0 0 0 ns tOLZ (3) OE\\ LOW to Active Output 00 0 0 n s tHZ (3) CE\\ HIGH to High Z Output 50 50 50 50 ns tOHZ (3) OE\\ HIGH to High Z Output 50 50 50 50 ns tOH Output Hold from Address Change 0 0 0 0 ns Symbol UNITSParameter -20 -15 -25-12 AC ELECTRICAL CHARACTERISTICS FOR WRITE OPERATIONS SYMBOL PARAMETER MIN MAX UNITS tWC Write Cycle Time 10 ms tAS Address Setup Time 0n s tAH Address Hold Time 50 ns tcs Write Setup Time 0n s tCH Write Hold Time 0n s tCW CE\\ Pulse Width 100 ns tOES OE\\ HIGH Setup Time 10 ns tOEH OE\\ HIGH Hold Time 10 ns tWP WE\\ Pulse Width 100 ns tWPH WE\\ HIGH Recovery 100 ns tDV Data Valid 1 Ps tDS Data Setup 50 ns tDH Data Hold 0n s tDW Delay to Next Write 10 Ps tBLC Byte Load Cycle 0.20 100 Ps with CL=5pF, from the point when CE\\ or OE\\ return HIGH (whichever occurs first) to the time when the outputs are no longer driven.

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. SOFTWARE DATA PROTECTION TIMING WAVEFORM (protection mode) tWCtBLC {Write Address Write Data 5555 AAAA or 2AAA 5555 AA Address Data Vcc CE\\ WE\\ SOFTWARE DATA PROTECTION TIMING WAVEFORM (non-protection mode) tWC 5555 AAAA or 2AAA 5555 AA Address Data Vcc CE\\ WE\\ Normal active mode 5555 AA 5555 AAAA or 2AAA tRC ADDRESS tCE CE\\ OE\\ WE\\ DATA VALID DATA I/O DATA VALID tOE VIH HIGH Z tOLZ tLE tOH tAA tHZ tOHZ READ CYCLE

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. ADDRESS CE\\ OE\\ WE\\ DATA VALID DATA IN HIGH Z DATA OUT tWC tAS tAH tCS tCH tOES tWP tOEH tDV tWPH tDS tDH ADDRESS CE\\ OE\\ WE\\ DATA VALID DATA IN HIGH Z DATA OUT tWC tAS tAH tOES tOEH tDV tWPH tDS tDH tCW tCS tCH WE\\ CONTROLLED WRITE CYCLE CE\\ CONTROLLED WRITE CYCLE

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc.

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. OE\\* CE\\ WE\\ ADDRESS ** I/O BYTE 0 BYTE 1 BYTE 2 BYTE n BYTE n+1 BYTE n+2 LAST BYTE tWPH tWP tBLC * Between successive byte writes within a page write operation, OE\\ can bee strobed LOW: e.g. this can be done with CE\\ and WE\\ HIGH to fetch data from another memory device within the system for the next write; or with WE\\ HIGH and CE\\ LOW effectively performing a polling operation. **: 1- For each successive write within the page write operation A 8-A16 should be the same or writes to an unknown address could occur. 2– The timings shown above are unique to page write operations. Individual byte load operations within the page write must conform to either CE\\ or WE\\ controlled write cycle timing. PAGE WRITE CYCLE

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. *All measurements are in inches. ASI Case #306 (Package Designator F) SMD 5962-38267, Case Outline M MECHANICAL DEFINITIONS* MIN MAX A 0.097 0.123 A1 0.090 0.110 b 0.015 0.019 c 0.003 0.007 D 0.810 0.830 D2 0.745 0.755 E 0.425 0.445 E1 0.330 0.356 e 0.045 0.055 H 1.000 1.100 L 0.290 0.310 Q 0.026 0.037 SYMBOL SMD SPECIFICATIONS NOTE: All drawings are per the SMD. ASI's package dimensional limits may differ, but they will be within the SMD limits. D EL e b Top View H c A QD2

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* *All measurements are in inches. Symbol Min Max Note Symbol Min Max Note A --- .225 eA/2 b .014 .026 2 L .125 .200 8 b1 .014 .023 3 Q .015 .070 9 b2 .045 .065 4 Q1 b3 .023 .045 5 S1 .005 --- 10 c .008 .018 2 S2 .005 --- 11 c1 .008 .015 3 a 90 O 105O E .510 .620 6 bbb --- .030 E2 ccc --- .010 E3 M --- .0015 2 eN 1 2 e A Note .100 BSC .600 BSC .300 BSC 1,14 NOTES: 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer’s identification shall not be used as a pin one identification mark. 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. 4. The b2 minimum dimension of .045 inch (1.14 mm) was implemented 30 September 1992. Until that date, a minimum dimension of .038 (0.97 mm) was acceptable. See 5.2.4 5. Corner leads (1, N, N/2, and N/2+1) may be configured as shown in detail A. For this configuration dimension b3 replaces dimension b2. 6. This dimension allows for off-center lid, meniscus, and glass overrun. 8. Pointed or rounded lead tips as shown in details B and C are preferred to ease insertion, but are not mandatory. 9. Dimension Q shall be measured from the seating plane to the base plane. 10. Measure dimension S1 at all four corners, see 5.2.5. 11. Measure dimension S2 from the top of the ceramic body to the nearest metallization or lead 12. N is the maximum number of terminal positions. 14. See tables VI and VII for descriptive type designators.

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc.

ORDERING INFORMATION

EXAMPLE: AS28C010CW-15/883C EXAMPLE: AS28C010F-15/883C Device Number Package Type Speed ns Process Device Number Package Type Speed ns Process AS28C010 CW -12 /* AS28C010 F -12 /* AS28C010 CW -15 /* AS28C010 F -15 /* AS28C010 CW -20 /* AS28C010 F -20 /* AS28C010 CW -25 /* AS28C010 F -25 /* *AVAILABLE PROCESSES IT = Industrial Temperature Range -40 oC to +85oC XT = Extended Temperature Range -55 oC to +125oC 883C = Full Military Class M Processing -55oC to +125oC

EEPROMEEPROMEEPROMEEPROMEEPROM AS28C010 AS28C010 Rev. 1.5 5/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. ASI TO DSCC PART NUMBER CROSS REFERENCE* Package Designator CW ASI Part # SMD Part# AS28C010CW-25 5962-3826701MXA AS28C010CW-20 5962-3826703MXA AS28C010CW-15 5962-3826705MXA AS28C010CW-12 5962-3826707MXA Package Designator F ASI Part # SMD Part# AS28C010F-25 5962-3826701MZA AS28C010F-20 5962-3826703MZA AS28C010F-15 5962-3826705MZA AS28C010F-12 5962-3826707MZA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.