AS27C256 AUSTIN | Alldatasheet

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UVEPROMUVEPROMUVEPROMUVEPROMUVEPROM AS27C256 AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc.

FEATURES

  • Organized 32,768 x 8
  • Single +5V ±10% power supply
  • Pin-compatible with existing 256K ROM’s and EPROM’s
  • All inputs/outputs fully TTL compatible
  • Power-saving CMOS technology
  • Very high-speed FLASHRITE Pulse Programming
  • 3-state output buffers
  • 400-mV DC assured noise immunity with standard TTL loads
  • Latchup immunity of 250 mA on all input and output pins
  • Low power dissipation (CMOS Input Levels) -Active - 165mW Worst Case -Standby - 1.7mW Worst Case (CMOS-input levels) * FUTURE High Speed Offerings: 55ns, 70ns, 90ns OPTIONS MARKING
  • Timing 120ns access -12 150ns access -15 170ns access -17 200ns access -20 250ns access -25 300ns access -30 55ns access -55 70ns access -70 90ns access -90
  • Package(s) Ceramic DIP (600mils) J No. 110 Ceramic LCC (450 x 550 mils) ECA No. 208
  • Processing / Operating Temperature Ranges Full Military (-55 oC to +125oC) M Industrial (-40°C to +85°C) I Military Temp (-55 oC to +125oC) XT PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATIONS
  • -55C to 125C operation
  • MILITARY Processing Method MIL-PRF-38535, Class Q
  • Commercial Version Available 28-Pin DIP (J) (600 MIL) 256K UVEPROM UV Erasable Programmable Read-Only Memory For more products and information please visit our web site at www.austinsemiconductor.com V PP A12 DQ0 DQ1 DQ2 GND Vcc A14 A13 A11 A10 DQ7 DQ6 DQ5 DQ4 DQ3 32-Pin LCC (ECA) (450 x 550 mils) Pin Name Function 4 3 2 1 32 31 30 A12 A14 A10 NC V CC A15 CE2 14 15 16 17 18 19 20 DQ2 DQ3 V SS DQ4 DQ5 DQ6 DQ7 DQ1 WE A13 A11 OE A10 CE1 DQ8 A12 V PP NC V CC A14 A13 NC DQ0 DQ1 DQ2 GND NC DQ3 DQ4 DQ5 A11 NC A10 DQ7 DQ6 Pin Name Function A0 - A14 Address Inputs DQ0-DQ7 I nputs (programming)/Outputs E\\ Chip Enable/Power Down G\\ Output Enable GND Ground VCC 5V Supply VPP 13V Programming Power Supply

UVEPROMUVEPROMUVEPROMUVEPROMUVEPROM AS27C256 AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. GENERAL DESCRIPTION The AS27C256 series is a set of 262,144 bit, ultraviolet-light erasable, electrically programmable read-only memories. These devices are fabricated using power-saving CMOS tech- nology for high speed and simple interface with MOS and bipo- lar circuits. All inputs (including program data inputs) can be driven by Series 54 TTL circuits without the use of external pullup resistors. Each output can drive one Series 54 TTL circuit without external resistors. The data outputs are 3-state for connecting multiple devices to a common bus. The AS27C256 is pin-compatible with 28-pin 256K ROMs and EPROMs. It is offered in a 600mil dual-in-line ceramic package (J suffix) and a 450 x 550 mil ceramic LCC (ECA suffix) rated for operation from -55°C to 125°C. Because this EPROM operates from a single 5V supply (in the read mode), it is ideal for use in microprocessor-based sys- tems. One other supply (12.75V) is needed for programming. All programming signals are TTL level. This device is pro- grammable by the AMD FLASHRITE Pulse programming algo- rithm. The FLASHRITE Pulse programming algorithm uses a V PP of 12.75VV and a VCC of 6.25V for a nominal programming time of four seconds. For programming outside the system, existing EPROM programmers can be used. Locations can be programmed singly, in blocks, or at random. FUNCTIONAL BLOCK DIAGRAM* * This symbol is in accordance with ANSI/IEEE std 91-1984 and IEC Publication 617-12. A5 DQ0 A6 DQ1 A7 DQ2 A8 DQ3 A9 DQ4 A10 DQ5 A11 DQ6 A12 DQ7 A13 A14 [PWR DWN] 22 EN A A A A A A A A EPROM 32,768 x 8 A 0 32,767

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. The seven modes of operation for the AS27C256 are listed in Table 1. The read mode requires a single 5V supply. TABLE 1. OPERATION MODES

2 VID

1For normal standby & read operation, VPP is Don't Care X.

UVEPROMUVEPROMUVEPROMUVEPROMUVEPROM AS27C256 AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. READ/OUTPUT DISABLE When the outputs of two or more AS27C256 are connected in parallel on the same bus, the output of any particular device in the circuit can be read with no interference from the compet- ing outputs of the other devices. To read the output of the selected AS27C256, a low-level signal is applied to E\\ and G\\. All other devices in the circuit should have their outputs disabled by applying a high-level signal to one of these pins. Output data is accessed at pins DQ0 through DQ7. LATCHUP IMMUNITY Latchup immunity on the AS27C256 is a minimum of 250mA on all inputs and outputs. This feature provides latchup im- munity beyond any potential transients at the printed cir- cuit board level when the EPROM is interfaced to industry standard TTL or MOS logic devices. Input/output layout approach controls latchup without compromising performance or packing density. POWER DOWN Active ICC supply current can be reduced from 25mA (AS27C256- 12 through AS27C256-25) to 1mA (TTL-level inputs) or 300µA (CMOS-level inputs) by applying a high TTL/CMOS signal to the E\\ pin. In this mode all outputs are in the high-impedance state. ERASURE Before programming, the AS27C256 is erased by exposing the chip through the transparent lid to a high-intensity ultraviolet light (wavelength 2537 Å). EPROM erasure before program- ming is necessary to ensure that all bits are in the logic-high state. Logic-lows are programmed into the desired locations. A programmed logic-low can be erased only by ultraviolet light. The recommended minimum exposure dose (UV intensity x ex- posure time) is 15W•s/cm 2. A typical 12mW/cm2, filterless UV lamp erases the device in 21 minutes. The lamp should be located about 2.5cm above the chip during erasure. After era- sure, all bits are in the high state. It should be noted that normal ambient light contains the correct wavelength for erasure; there- fore, when using the AS27C256, the window should be covered with an opaque label. FLASHRITE PULSE PROGRAMMING The AS27C256 EPROM is programmed by using the AMD FLASHRITE Pulse programming algorithm as illustrated by the flowchart in Figure 1. This algorithm programs the device in a nominal time of 4 seconds. Actual programming time varies as a function of the programmer used. Data is presented in parallel (eight bits) on pins DQ0 to DQ7. Once addresses and data are stable, E\\ is pulsed. The FLASHRITE Pulse programming algorithm uses initial pulses of 100 microseconds (µs) followed by a byte-verifica- tion step to determine when the addressed byte has been suc- cessfully programmed. Up to 25 100µs pulses per byte are provided before a failure is recognized. The programming mode is achieved when V PP = 12.75V , VCC= 6.25V , G\\ = VIH, and E\\ = VIL. More than one device can be programmed when the devices are connected in parallel. Loca- tions can be programmed in any order. When the AMD FLASHRITE Pulse programming routine is completed, all bits are verified with V CC = VPP = 5V . PROGRAM INHIBIT Programming can be inhibited by maintaining a high-level input on E\\. PROGRAM VERIFY Programmed bits can be verified with VPP = 12.75V when G\\ = VIL, and E\\ = VIH. SIGNATURE MODE The signature mode provides access to a binary code iden- tifying the manufacturer and device type. This mode is acti- vated when A9 is forced to 12V ±0.5V . Two identifier bytes are accessed by A0 (terminal 10); i.e., A0=V IL accesses the manu- facturer code, which is output on DQ0-DQ7; A0=VIH accesses the device code, which is also output on DQ0-DQ7. All other addresses must be held at VIL. Each byte contains odd parity on bit DQ7. The manufacturer code for these devices is 01h and the device code is 10h.

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. FIGURE 1. FLASHRITE PULSE PROGRAMMING FLOWCHART

UVEPROMUVEPROMUVEPROMUVEPROMUVEPROM AS27C256 AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Expo- sure to absolute maximum rating conditions for extended peri- ods may affect reliability. ** All voltage values are with respect to GND. ABSOLUTE MAXIMUM RATINGS* Supply V oltage Range, V Input V oltage Range, All inputs except A9**..-0.6V to +6.0V RECOMMENDED OPERATING CONDITIONS NOTES: 1. VCC must be applied before or at the same time as V PP and removed after or at the same time as V PP. The deivce must not be inserted into or removed from the board when V PP or V CC is applied. 2. V PP can be connected to V CC directly (except in the program mode). V CC supply current in this case would be I CC2 + I PP1. ELECTRICAL CHARACTERISTICS OVER RECOMMENDED RANGES OF SUPPLY VOLTAGE AND OPERATING FREE-AIR TEMPERATURE NOTES: 1. Typical values are at T A=25°C and nominal voltages. 2. This parameter has been characterized at 25°C and is not tested. TEST CONDITIONS MIN TYP1 MAX UNIT VOH IOH = -400µA 2.4 V VOL IOL = 2.1mA 0.4 V II VI = 0V to 5.5V ±1 µA IO VO = 0V to VCC ±5 µA IPP1 VPP = VCC = 5.5V 100 µA IPP2 VPP = 13V 30 50 mA TTL-Input Level VCC = 5.5V, E\\=VIH 1m A CMOS-Input Level VCC = 5.5V, E\\=VCC 300 µA ICC2 VCC supply current (active) '27C256-12 '27C256-15 '27C256-17 '27C256-20,-25 E\\=V IL, VCC=5.5V tcycle = minimum, outputs open 15 25 mA PARAMETER ICC1 VCC supply current (standby) High-level output voltage Low-level output voltage Input current (leakage) V PP supply current Output current (leakage) VPP supply current (during program pulse)2 MIN TYP MAX 4.5 5 5.5 6 6.25 6.5 VCC-0.6 12.5 12.75 13 TTL inputs 2.2 VCC+.6 CMOS inputs VCC-0.2 V CC+.6 TTL inputs -0.5 0.8 CMOS inputs -0.5 0.2 VID 11.5 12 12.5 TA -55 TC +125 VCC Read Mode1 FLASHRITE Pulse programming algorithm Supply Voltage Read Mode2 FLASHRITE Pulse programming algorithm VPP High-level input voltageVIH Supply Voltage VIL Low-level input voltage Operating free-air temperature Operating case temperature Voltage level on A9 for signature mode

UVEPROMUVEPROMUVEPROMUVEPROMUVEPROM AS27C256 AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. NOTES: 1.Timing measurements are made at 2V for logic high and 0.8V for logic low (see figure 2). 2. Common test conditions apply for t dis except during programming. 3. Value calculated from 0.5V delta to measured output level. This parameter is only sampled and not 100% tested. SWITCHING CHARACTERISTICS FOR PROGRAMMING: VCC = 6.5V and VPP = 12.75V (AMD FLASHRITE ALGO), TA = 25°C CAPACITANCE OVER RECOMMENDED RANGES OF SUPPLY VOLTAGE AND OPERAT- ING FREE-AIR TEMPERATURE, f = 1MHz* * Capacitance measurements are made on a sample basis only. Typical values are at TA = 25°C and nominal voltages. SWITCHING CHARACTERISTICS OVER RECOMMENDED RANGES OF SUPPLY VOLT- AGE AND OPERATING FREE-AIR TEMPERATURE1,2 TEST CONDITIONS TYP MAX UNIT Ci Input capacitance VI = 0V 61 0 p F Co Output capacitance VO = 0V 10 14 pF PARAMETER MIN MAX MIN MAX ta(A) Access time from address 120 150 ns ta(E) Access time from E\\ 120 150 ns ten(G)R Output enable time from G\\ 40 50 ns tdis Disable time of output from G\\ or E\\, whichever occurs first3 0 30 0 30 ns tv(A) Output data valid time after change of address, E\\, or G\\, whichever occurs first3 00 n s PARAMETER -12 see Figure 2 -15 UNIT TEST CONDITIONS1, 2 MIN MAX MIN MAX MIN MAX ta(A) Access time from address 170 200 250 ns ta(E) Access time from E\\ 170 200 250 ns ten(G)R Output enable time from G\\ 50 60 60 ns tdis Disable time of output from G\\ or E\\, whichever occurs first3 04 005 006 0 n s tv(A) Output data valid time after change of address, E\\, or G\\, whichever occurs first3 000 n s see Figure 2 -25 UNIT TEST CONDITIONS1, 2PARAMETER -17 -20 MIN MAX UNIT tdis(G) Output disable time from G\\ 0 130 ns ten(G)W Output enable time from G\\ 150 ns PARAMETER

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

  1. CL includes probe and fixture capacitance.

FIGURE 2. LOAD CIRCUIT AND VOLTAGE WAVEFORMS at 2V for logic high and 0.8V for logic low for both inputs and outputs.

UVEPROMUVEPROMUVEPROMUVEPROMUVEPROM AS27C256 AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. MECHANICAL DEFINITION* *All measurements are in inches. ASI Case #110 (Package Designator J) eA c D E A Q L e bb2S1 Symbol SMD Specifications MIN MAX A --- 0.232 b 0.014 0.026 b2 0.045 0.065 c 0.008 0.018 D --- 1.490 E 0.500 0.610 eA 0.600 BSC e 0.100 BSC L 0.125 0.200 Q 0.015 0.060 S1 0.005 --- S2 0.005 ---

UVEPROMUVEPROMUVEPROMUVEPROMUVEPROM AS27C256 AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. ASI Case #208 (Package Designator ECA) MECHANICAL DEFINITIONS* *All measurements are in inches. Detail A b L See Detail A e E D A MIN MAX A 0.060 0.120 b 0.022 0.028 b1 0.006 0.022 D 0.442 0.458 E 0.540 0.560 e L 0.045 0.055 L1 0.075 0.095

0.050 BSC

0.300 BSC

0.400 BSC

UVEPROMUVEPROMUVEPROMUVEPROMUVEPROM AS27C256 AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. *PROCESS / OPERA TING TEMPERA TURE M = Full Military Processing Per -55 oC to +125oC MIL-PRF-3835, Class Q I = Industrial Temperature Range -40°C to +85°C XT = Military Temperature Range -55 oC to +125oC EXAMPLE: AS27C256-30JM/MIL Device Number Speed Package Type Operating Temp. AS27C256 -55 J * AS27C256 -70 J * AS27C256 -90 J * AS27C256 -12 J * AS27C256 -15 J * AS27C256 -17 J * AS27C256 -20 J * AS27C256 -25 J * AS27C256 -30 J * EXAMPLE: AS27C256-15ECAM Device Number Speed Package Type Operating Temp. AS27C256 -55 ECA * AS27C256 -70 ECA * AS27C256 -90 ECA * AS27C256 -12 ECA * AS27C256 -15 ECA * AS27C256 -17 ECA * AS27C256 -20 ECA * AS27C256 -25 ECA * AS27C256 -30 ECA *

ORDERING INFORMATION

UVEPROMUVEPROMUVEPROMUVEPROMUVEPROM AS27C256 AS27C256 Rev. 2.0 7/06 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. Austin Semiconductor, Inc. SMD ORDERING INFORMATION SMD ASI PN SPEED PACKAG E 5962-8606301XA AS27C256 -20JM 200ns 600mil, 28LD. DIP 5962-8606311XA AS27C256 -20JM 200ns 600mil, 28LD. DIP 5962-8606302XA AS27C256 -25JM 250ns 600mil, 28LD. DIP 5962-8606312XA AS27C256 -25JM 250ns 600mil, 28LD. DIP 5962-8606303XA AS27C256 -30JM 300ns 600mil, 28LD. DIP 5962-8606313XA AS27C256 -30JM 300ns 600mil, 28LD. DIP 5962-8606304XA AS27C256 -17JM 170ns 600mil, 28LD. DIP 5962-8606314XA AS27C256 -17JM 170ns 600mil, 28LD. DIP 5962-8606305XA AS27C256 -15JM 150ns 600mil, 28LD. DIP 5962-8606315XA AS27C256 -15JM 150ns 600mil, 28LD. DIP 5962-8606306XA AS27C256 -12JM 120ns 600mil, 28LD. DIP 5962-8606316XA AS27C256 -12JM 120ns 600mil, 28LD. DIP 5962-8606307XA AS27C256 -90JM 90ns 600mil, 28LD. DIP 5962-8606317XA AS27C256 -90JM 90ns 600mil, 28LD. DIP 5962-8606308XA AS27C256 -70JM 70ns 600mil, 28LD. DIP 5962-8606318XA AS27C256 -70JM 70ns 600mil, 28LD. DIP 5962-8606309XA AS27C256 -55JM 55ns 600mil, 28LD. DIP 5962-8606319XA AS27C256 -55JM 55ns 600mil, 28LD. DIP SMD ASI PN SPEED PACKAG E 5962-8606301YA AS27C256 -20ECA 200ns 32-LD. 0.450 x 0.550, LCC 5962-8606311YA AS27C256 -20ECA 200ns 32-LD. 0.450 x 0.550, LCC 5962-8606302YA AS27C256 -25ECA 250ns 32-LD. 0.450 x 0.550, LCC 5962-8606312YA AS27C256 -25ECA 250ns 32-LD. 0.450 x 0.550, LCC 5962-8606303YA AS27C256 -30ECA 300ns 32-LD. 0.450 x 0.550, LCC 5962-8606313YA AS27C256 -30ECA 300ns 32-LD. 0.450 x 0.550, LCC 5962-8606304YA AS27C256 -17ECA 170ns 32-LD. 0.450 x 0.550, LCC 5962-8606314YA AS27C256 -17ECA 170ns 32-LD. 0.450 x 0.550, LCC 5962-8606305YA AS27C256 -15ECA 150ns 32-LD. 0.450 x 0.550, LCC 5962-8606315YA AS27C256 -15ECA 150ns 32-LD. 0.450 x 0.550, LCC 5962-8606306YA AS27C256 -12ECA 120ns 32-LD. 0.450 x 0.550, LCC 5962-8606316YA AS27C256 -12ECA 120ns 32-LD. 0.450 x 0.550, LCC 5962-8606307YA AS27C256 -90ECA 90ns 32-LD. 0.450 x 0.550, LCC 5962-8606317YA AS27C256 -90ECA 90ns 32-LD. 0.450 x 0.550, LCC 5962-8606308YA AS27C256 -70ECA 70ns 32-LD. 0.450 x 0.550, LCC 5962-8606318YA AS27C256 -70ECA 70ns 32-LD. 0.450 x 0.550, LCC 5962-8606309YA AS27C256 -55ECA 55ns 32-LD. 0.450 x 0.550, LCC 5962-8606319YA AS27C256 -55ECA 55ns 32-LD. 0.450 x 0.550, LCC