ART20U120 ARTSCHIP | Alldatasheet

Document overview

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Technical content

Features

  • High short circuit rating opt imized for motor control
  • Low conduction losses
  • High switching speed
  • Tighter parameter distribution VCES=1200 V VCE(on) typ. =3,8 V @VGE =15V, Ic=20A N-channel ABSOLUTE MAXIMUM RATINGS Parameter Symbol Units Max Collector-to-Emitter Voltage V CES V 1200 Continuous Collector Current I C @ Tc=25˚C 20 Continuous Collector Current I C @ Tc=100˚C 10 Pulsed Collector Current 1 ICM 41 Clamped Inductive Load Current 2 ILM А Short Circuit Withstand Time tsc µs 10 Maximum Power Dissipation P D @ Tc=25˚C 100 Maximum Power Dissipation P D @ Tc=100˚C W Gate–to-Emitter Voltage V GE V ±20 Operating Junction and Storage temperature Range TJ TSTG ºC -55 to +150 Soldering Temperature, for 10 seconds ºC 300 THERMAL RESISTANCE Parameter Symbol Units Min Typ. Max Junction-to-Case R ΘJC - - 1,2 Case-to-Sink, Flat, Greased Surface R ΘCS - 0,24 - Junction-to-Ambient, typical socket mount R ΘJA ˚C/W - - 40

INSULATED GATE BIPOLAR TRANSISTOR www.artschip.com 2 ELECTRICAL CHARACTERISTICS (Tj =25 °C) Parameter Symbol Units Test Conditions Min Typ. Max Collector-to-Emitter Breakdown Voltage V (BR)CES V V GE = 0V, IC = 250µA 1200 - - Emitter-to-Collector Breakdown Voltage V(BR)ECS V V GE = 0V, IC = 1A 18 - - Breakdown Voltage Temp.Coefficient ∆V(BR)CES/∆TJ V/˚CV GE = 0V, IC = 2 mA - 0,2 - VGE = 15V, IC = 10A - 3,0 4,0 VGE = 15V, IC = 20A - 3,8 - Collector-to-Emitter Saturation Voltage (See figure 2,5) V CE(ON) V VGE = 15V, IC = 10A TJ =150˚C - 2,9 - Gate Threshold Voltage V GE(th) V V GE=VCE, IC =250 µA 3,0 - 6,0 Threshold Voltage Temp.Coefficient ∆V(GE)th/ ∆TJ mV/˚CV GE=VCE, IC =250µA - -11 - Forward Transconductance g (fe) S V CE = 100V, IC = 10A 4,3 6,8 - VCE = 1200V, VGE =0V - - 250 VCE = 10V, VGE =0V TJ=25˚C - - 2,0Zero Gate Voltage Collector Current ICES µA VCE = 1200V, VGE =0V TJ =150˚C - - 2000 Gate-to-Emitter Leakage Current I GES nA V GS = ± 2 0 V ± 1 0 0 SWITCHING CHARACTERISTICS (Tj =25 °C) Parameter Symbol Units Test Conditions Min Typ. Max Total Gate Charge (turn on) Qg - 54 80 Gate-to-Emitter Charge (turn on) Q ge - 12 14 Gate-to-Collector Charge (turn on) Q gc nC VGE = 15V,VCC = 400V, I C =10A See Figure 8 - 24 32 Turn-On Delay Time t d(on) - 30 - R i s e T i m e t r - 27 - Turn-Off Delay Time t d(off) - 230 300 Fall Time t f ns - 130 170 Turn-On Switching Loss E on - 0,66 - Turn-Off Switching Loss E off - 0,94 - Total Switching Loss E tS mJ VCC =960V, IC =10A V GE = 15V RG=23Ω Energy losses include «tail» See Figure 9,10,14 - 1,6 2,4 Turn-On Delay Time t d(on) - 29 - R i s e T i m e t r - 28 - Turn-Off Delay Time t d(off) - 340 - Fall Time t f ns - 350 - Total Switching Loss E tS mJ TJ =150˚C VCC =960V, IC =10A V GE = 15V RG=23 Ω Energy losses include «tail» See Figure 10,11,14 - 3,3 - Input Capacitance C ISS - 830 - Output Capacitance C OSS - 630 - Reverse Transfer Capacitance C RSS pF VGE = 0V,VCC = 30V, f = 1.0MHz See Figure 7 - 16 - NOTES: 1 Repetitive rating; VGE =20V, pulse width limited by max junction temperature.(Fig.13b) 2 VCC=80%(VCES), L= 10 µH, VGE = 20V, RG=23 Ω,(Fig.13a) 3 Pulse width ≤80 µs, duty factor ≤0,1%. 4 Pulse width 5,0µs single short.

INSULATED GATE BIPOLAR TRANSISTOR www.artschip.com 3 Fig.1- Typical Load Current vs. Frequency (Load Current=IRMS of fundamental) Fig.2-Typical Output Characteristics Fig.3-Typical Transfer Characteristics

INSULATED GATE BIPOLAR TRANSISTOR www.artschip.com 4 Fig.4-Maximum Collector Current vs. Case Tempertaure Fig.5 – Typical Collector-to-Emitter Voltage Vs. Junction Temperature Fig. 6 – Maximum Effective Transient Thermallmpedance, Junction-to-Case

INSULATED GATE BIPOLAR TRANSISTOR www.artschip.com 5 Fig.7 – Typical Capacitance vs. Collector-to-Emitter Voltage Fig.8- Typical Gate Charge vs. Gate-to-Emitter Voltage Fig.9 – Typical Switching Losses vs. Gate Resistance Fig. 11 – Typical Switching Losses vs. Colector-to-Emitter Current Fig. 10 – Typical Switching Losses vs. Junction Temperature Fig. 12 – Turn-Off SOA

INSULATED GATE BIPOLAR TRANSISTOR www.artschip.com 6 Fig. 13a – Clamped Inductive Load Test CIrcuit Fig.13b-Pulsed Collector Current Test Circuit