APS24N70D APME | Alldatasheet

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750V SIC N-Channel Enhancement Mode MOSFET APS24N70D REV1.0 永源微電子科技有限公司

Description

The APS24N70D is silicon N-channel Enhanced SIC MOSFETS, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 750V ID =24A RDS(ON) < 250mΩ @ VGS=18V （Type：190mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) APS24N70D TO-252-3L APS24N70D XXX YYYY 1000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage (VGS = 0V) 750 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 24 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current (note1) 90 A VGS Gate-Source Voltage -8/+25 V EAS Single Pulse Avalanche Energy 7.35 mJ IAS Avalanche Current 10 A PD Power Dissipation (TC = 25ºC) 43 W TJ, Tstg Operating Junction and Storage Temperature Range -55~+175 ºC RthJC Thermal Resistance, Junction-to-Case 3.5 ºC/W RthJA Thermal Resistance, Junction-to-Ambient 62.5 ºC/W

750V SIC N-Channel Enhancement Mode MOSFET APS24N70D REV1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS Drain Source Breakdown Voltage VGS=0V,ID=1mA 750 - - V VGS(th) Gate Threshold Voltage VDS=VGS,ID=1mA 2.5 3.5 4.5 V VDS=VGS,ID=1mA,Tj=175℃ - 2.5 4.0 V IDSS Zero Gate Voltage Drain Current VDS=650V,VGS=0V 0.01 10 μA IGSS Gate Source Leakage Current VGS=18V,VDS=0V - - 100 nA RDS,on Current Drain-Source On-State Resistance VGS=18V,ID=2A - 190 250 mΩ VGS=18V,ID=2A,Tj=175℃ - 200 280 gfs Transconductance VDS=20V,ID=2A - 5.8 - S VDS=20V,ID=2A,Tj=175℃ - 8.6 - Rg Internal Gate Resistance VAC=25mV,f=1MHz - 12 - Ω Ciss Input Capacitance VDS=600V,VGS=0V,VAC=25mV, f=1MHz - 303 - pF Coss Output Capacitance - 27 - Crss Reverse Capacitance - 2 - Eoss Coss Stored Energy - 5.3 - μJ Qgs Gate Source Charge VDS=400V,VGS=-4/+18V, ID=2A - 3.2 - nC Qgd Gate Drain Charge - 6.2 - Qg Gate Charge - 12.8 - Eon Turn on Switching Energy VDS=400V,VGS=4/+18V, ID=2A, Rg=2.5Ω,L=120μH - 11.8 - μJ Eoff Turn off Switching Energy - 5.8 - td(on) Turn on Delay Time - 7.5 - ns tr Rise Time - 7.2 - td(off) Turn off Delay Time - 11.7 - tf Fall Time - 20.8 - VSD Diode Forward Voltage VGS= -4V,ISD=1A - 3.8 - V VGS= -4V,ISD=1A,Tj=175℃ - 3.3 - trr Reverse Recovery Time VDS=400V,VGS= -4V,ID=2A, di/dt=1000A/μS - 7.1 - ns Qrr Reverse Recovery Charge - 17.6 - nC Irm Peak Reverse Recovery Current - 4.2 - A Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The EAS data shows Max. rating . IAS=5.5A, VDD= 50V, RG=25Ω, Starting TJ=25 ºC 3、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

750V SIC N-Channel Enhancement Mode MOSFET APS24N70D REV1.0 永源微電子科技有限公司 Typical Characteristics Fig.1 Output characteristics Tj=25℃ Fig.2 Output characteristics Tj=175℃ Fig.3 Normalized On-Resistance vs. Temperature Fig.4 On-Resistance vs. Drain Current For Various Temperatures Fig.5 On-Resistance vs. Temperature For Fig.6 Body Diode Characteristic at 25℃ Various Gate Voltag

750V SIC N-Channel Enhancement Mode MOSFET APS24N70D REV1.0 永源微電子科技有限公司 Fig.7 Threshold Voltage vs. Temperature Fig.8 Gate Charge Characteristics Fig.9 3rd Quadrant Characteristic at 25℃ Fig.10 Output Capacitor Stored Energy Fig.12 Capactitances vs. Drain-Source Voltage(0-600V) Figure 14. Clamped Inductive Switching Energy Fig.7 Threshold Voltage vs. Temperature Fig.8 Gate Charge Characteristics

Figure 16. Clamped Inductive Switching Figure 17. Switching Times vs. Rg(ext)

750V SIC N-Channel Enhancement Mode MOSFET APS24N70D REV1.0 永源微電子科技有限公司 Package Mechanical Data-TO-252-3L Symbol Dim in mm Min Typ Max A 2.1 2.3 2.5 A1 0 0.064 0.128 b 0.64 0.75 0.86 c 0.45 0.52 0.6 D 6.4 6.6 6.8 D1 5.33REF D2 4.83REF D3 5.25REF E 5.9 6.1 6.3 e 2.286TYP L 9.8 10.1 10.4 L1 2.888REF L2 1.4 1.5 1.7 L3 1.65REF L4 0.6 0.8 1 ϕ 1.1 1.2 1.3 θ 0° 10° θ1 5° 10° θ2 5° 10°

750V SIC N-Channel Enhancement Mode MOSFET APS24N70D REV1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

750V SIC N-Channel Enhancement Mode MOSFET APS24N70D REV1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronices” Edition Date Change REV1.0 2024/1/31 Initial release