AP50N20NF APME | Alldatasheet

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200V N-Channel Enhancement Mode MOSFET AP50N20NF REV1.0 永源微電子科技有限公司

Description

The AP50N20NFuses advanced APM-SGT I technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 200V ID = 50A RDS(ON) <52mΩ@ VGS=10V （Type：42mΩ） Application Automative lighting Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP50N20NF PDFN5*6-8L AP50N20NF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Drain Current, VGS @ 10V 50 A ID@TC=100℃ Drain Current, VGS @ 10V 36 A IDM Pulsed Drain Current1 200 A EAS Single pulsed avalanche energy 280 mJ PD@TC=25℃ Total Power Dissipation 52 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Maximum Thermal Resistance, Junctionambient 1.9 ℃/W RθJC Maximum Thermal Resistance, Junction-case 25 ℃/W

200V N-Channel Enhancement Mode MOSFET AP50N20NF REV1.0 永源微電子科技有限公司 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test condition Min. Typ. Max. Unit VDS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 200 - - V VGS(th) Gate-Source Threshold Voltage VDS=VGS, ID=250μA 2.5 3.5 4.5 V IGSS Gate-Source Leakage VDS=0V, VGS=± 20V - - ± 100 nA IDSS Zero Gate Voltage Drain Current VDS=200V, VGS=0V - - 1 μA VDS=200V, VGS=0V, TJ=75°C - - 10 RDS(on) Drain-Source On-State Resistance a VGS=10V, ID=10A - 42 52 mΩ Ciss Input Capacitance VDS=100V, VGS=0V, f=1MHz - 1450 - pF Coss Output Capacitance - 116 - pF Crss Reverse Transfer Capacitance - 9.0 - pF Qg Total Gate Charge VDS=100V, VGS=7.5V, ID=10A - 18.3 nC Qgs Gate-Source Charge - 6.3 - nC Qgd Gate-Drain Charge - 6.0 - nC Qoss Output Charge VDS=100V, VGS=0V - 40.5 - nC Rg Gate Resistance f = 1 MHz 1.0 - Ω td(on) Turn-On Delay Time VDD=100V, RL=10Ω ID=10A, VGEN=10V, Rg =1Ω - 10 - ns tr Rise Time - 18 - ns td(off) Turn-Off Delay Time - 17 - ns tf Fall Time - 8 - ns trr Body Diode Reverse Recovery Time IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C - 165 ns Qrr Body Diode Reverse Recovery Charge - 570 nC IS Continuous Source-Drain Diode Current TC = 25 °C - - 50 A ISM Pulse Diode Forward Current (t=100μs) - - 150 VSD Body Diode Voltage IS = 5 A - 0.81 1.1 V Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=72V,VGS=10V,L=0.1mH,IAS=40A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

200V N-Channel Enhancement Mode MOSFET AP50N20NF REV1.0 永源微電子科技有限公司 Typical Characteristics Fig1：Output Characteristics Fig2：Transfer Characteristics Fig3：On-Resistance vs. Drain Current Fig4： Capacitance Fig5：Gate Charge Fig6：On-Resistance vs. Junction Temperature

200V N-Channel Enhancement Mode MOSFET AP50N20NF REV1.0 永源微電子科技有限公司 Fig7：Source-Drain Diode Forward Voltage Fig8： On-Resistance vs. Gate-to-Source Voltage Fig9：Threshold Voltage Fig10：Single Pulse Power, Junction-to-Ambient Fig11：Normalized Thermal Transient Impedance, Junction-to-Ambient

200V N-Channel Enhancement Mode MOSFET AP50N20NF REV1.0 永源微電子科技有限公司 Symbol Common mm Mim Max A 0.90 1.10 A1 0.254 REF A2 0-0.05 D 4.824 4.976 D1 3.910 4.110 D2 4.944 5.076 E 5.924 6.076 E1 3.375 3.575 E2 5.674 5.826 b 0.350 0.450 e 1.270 L 0.534 0.686 L1 0.424 0.576 K 1.190 1.390 H 0.549 0.701 Φ 8° 12°

200V N-Channel Enhancement Mode MOSFET AP50N20NF REV1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

200V N-Channel Enhancement Mode MOSFET AP50N20NF REV1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change REV1.0 2023/6/29 Initial release