AP50N20F APME | Alldatasheet
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200V N-Channel Enhancement Mode MOSFET AP50N20F/P/T REV1.1 永源微電子科技有限公司
Description
The AP50N20F/P/T is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 200V ID =50A RDS(ON) <55mΩ @ VGS=10V （Type：48mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP50N20F AP50N20F TO220F-3L XXX YYYY 1000 AP50N20P TO220-3L AP50N20P XXX YYYY 1000 AP50N20T TO263-3L AP50N20T XXX YYYY 800 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 200 V ID Drain Current -continuous 50 A IDM Drain Current -pulse 200 A VGSS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy 800 mJ IAS Avalanche Current 28 A EAR Repetitive Avalanche Current 1.92 mJ dv/dt Peak Diode Recovery dv/dt 5.5 V/ns PD Power Dissipation 158 W TJ，TSTG Operating and Storage Temperature Range -55～+150 ℃ RthJC Thermal Resistance, Junction to Case 0.79 ℃/W RthJA Thermal Resistance, Junction to Ambient 40 ℃/W
200V N-Channel Enhancement Mode MOSFET AP50N20F/P/T REV1.1 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Tests conditions Min Typ Max Units BVDSS Drain-Source Voltage ID=250μA, VGS=0V 200 - - V IDSS Zero Gate Voltage Drain Current VDS=200V, VGS=0V,TC=25℃ - - 1 μA IGSSF Gate-body leakage current, forward VDS=0V, VGS =30V - - 100 nA IGSSR Gate-body leakage current, reverse VDS=0V, VGS =-30V - - -100 nA VGS(th) Gate Threshold Voltage VDS = VGS , ID=250μA 2.0 3.0 4.0 V RDS(ON) Static Drain-Source On-Resistance VGS =10V , ID=14.0A - 48 55 mΩ gfs Forward Transconductance VDS = 40V , ID=14.0A - 24 - S Ciss Input capacitance VDS=25V, VGS =0V, f=1.0MHZ - 2879 3742 pF Coss Output capacitance - 362 470 pF Crss Reverse transfer capacitance - 81 105 pF td(on) Turn-On delay time VDD=100V,ID=28A,RG=25Ω VGS =10V （note 4，5） - 28 69 ns tr Turn-On rise time - 251 494 ns td(off) Turn-Off delay time - 309 617 ns tf Turn-Off Fall time - 220 412 ns Qg Total Gate Charge VDS =160V , ID=28A VGS =10V - 103 136 nC Qgs Gate-Source charge - 16 - nC Qgd Gate-Drain charge - 53 - nC IS Continuous Body Diode Current TC = 25 ºC - - 28 A ISM Pulsed Diode Forward Current - - 112 A VSD Body Diode Voltage VGS=0V, IS=28A - 1.4 V trr Reverse recovery time VGS=0V, IS=28A dIF/dt=100A/μs 218 ns Qrr Reverse recovery charge 1.91 μC Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The EAS data shows Max. rating . L=1.5mH, IAS=28A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1% 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
200V N-Channel Enhancement Mode MOSFET AP50N20F/P/T REV1.1 永源微電子科技有限公司
Electrical Characteristics
200V N-Channel Enhancement Mode MOSFET AP50N20F/P/T REV1.1 永源微電子科技有限公司
200V N-Channel Enhancement Mode MOSFET AP50N20F/P/T REV1.1 永源微電子科技有限公司 Package Mechanical Data
200V N-Channel Enhancement Mode MOSFET AP50N20F/P/T REV1.1 永源微電子科技有限公司 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "DeliverySpecification" for the APM Microelectronics product that you Intend to use. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurateand reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM MicroelectronicsSemiconductor CO., LTD. 5,In the event that any or all APM Microelectronics products(including technical data, services)described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliabilityproducts. However, any and all semiconductor products fail with some probability. It is possible thatthese probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 3, Specifications of any and all APM Microelectronics products described or contained hereinstipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms andstates that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operatingcondition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 1,Any and all APM Microelectronics products described or contained herein do not havespecifications that can handle applications that require extremely high levels of reliability, such aslife support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APMMicroelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. Attention
200V N-Channel Enhancement Mode MOSFET AP50N20F/P/T REV1.1 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronics” Edition Date Change Rve1.0 2023/4/31 Initial release Rve1.1 2025/8/6 UpĚate LOGO AnĚ CorrecteĚ Danual POD