APM4953 ARTSCHIP | Alldatasheet

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-30V/-4.9A, RDS(on)=53mΩ(typ.)@VGS=-10V R DS(on)=53mΩ(typ.)@VGS=-4.5V Supper High Density Cell Design Reliable and Rugged Pin Description SO-8 P-Channel Mosfet Ordering and Marking Information Package Code K : S O - 8 Operation Junction Temp. Range C : - 5 5 t o 1 5 0¥ Handling Code TU: Tube TR: Tape & Reel APM4953K: XXXXX – Date Code Absolute Maximum Ratings (TA=25¥ unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±25 V ID* Storage Temperature Range -4.9 IDM Thermal Resistance – Junction to Ambient -30 A * Surface Mounted on FR4 Board, t ≤10 sec. Absolute Maximum Ratings (Cont.) (TA=25¥ unless otherwise noted) Symbol Parameter Rating Unit TA=25¥ 2.5 PD Maximum Power Dissipation TA=100¥ 1.0 W TJ Maximum Junction Temperature 150 TSTG Storage Temperature Range -55 to 150 RQJA Thermal Resistance – Junction to Ambient 50 ¥/W

Dual P-Channel Enha ncement Mode Mosfet www.artschip.com 2 Electrical Characteristics (TA=25¥ unless otherwise noted) APM4953 Symbol Parameter Test Condition Min. Typa. Max Unit Static BVDSS Drain-Source Breakdown Voltage V GS=0V, IDS=-250µA -30 V IDSS Zero Gate Voltage Drain Current V DS=-24V, VGS=0V -1 µA VGS(th) Gate Threshold Voltage V GS=VGS, IDS=-250µA -1 -1.5 -2 V IGSS Gate Leakage Current V GS=±25V, VDS=0V ±100 nA VGS=-10V, IDS=-4.9A 53 60 RDS(ON) Drain-Source On-state Resistance b VGS=-4.5V, IDS=-3.6A 80 95 mΩ VSD Diode Forward Voltage b I SD=-1.7A, VGS=0V -0.7 -1.3 V Dynamica Qg Total Gate Charge 22.3 29 Qgs Gate-Source Charge 4.65 Qgd Gate-Drain Charge VDS=-15V, IGS=-10V ID=-4.6A nC td(on) Turn-on Delay Time 10 18 Tr Turn-on Rise Time 15 20 td(OFF) Turn-off Delay Time 22 38 Tf Turn-off Fall Time VDD=-15V, ID=-2A, VGEN=-10V, RG=6Ω RL=7.5Ω 15 25 ns Ciss Input Capacitance 1260 Coss Output Capacitance 340 Crss Reverse Transfer Capacitance VGS=0V VDS=-25V Frequency=1.0MHz 220 pF Notes a: Pulse test; pulse width ≤300µs, duty cycle ≤2% b: Guaranteed by design, not subject to production testing

Dual P-Channel Enha ncement Mode Mosfet www.artschip.com 3 Typical Characteristics Output Characteristics -VDS- Drain-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage -VGS-Gate-to-Source Voltage(V) Transfer Characteristics -VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current On-Resistance Vs. Junction Temperature TJ-Junction Temperature (¥)

Dual P-Channel Enha ncement Mode Mosfet www.artschip.com 4 Typical Characteristics (Cont.) Gate Charge QG- Gate Charge (nC) Source-Drain Diode Forward Voltage -VSD – Source-to-Drain Voltage (V) Capacitance -VDS -Drain-to-Source Voltage (V) Single Pulse Power Time (sec) Normalized Thermal Transient Impedance, Junction to Ambient Square Wave Pulse Duration (sec)

Dual P-Channel Enha ncement Mode Mosfet www.artschip.com 5 Packaging Information SOP-8 pin (Reference JEDEC Registration MS-012) Millimeters Inches Dim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC Ф1 8 ˚ 8 ˚ Physical Specifications Terminal Material Solder-Plated Copper (Solder Material: 90/10 or 63/37 SnPb) Lead Solderability Meets EIA Specificatio n RS186-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow)

Dual P-Channel Enha ncement Mode Mosfet www.artschip.com 6 Classification Reflow Profiles Convection or IR/Convection VPR Average ramp-up rate (183¥ to Peak) 3 ¥/second max. 10 ¥/second max. Preheat temperature 125 ±25¥ 120 seconds max Temperature maintained above 183¥ 60-150 seconds Time within 5¥ of actual peak temperature 10-20 seconds 60 seconds Peak temperature range 220 +5/-0 ¥ or 235 +5/-0¥ 215-219 ¥ or 235 +5/-0¥ Ramp-down rate 6 ¥/second max. 10 ¥/second max. Time 25¥ to peak temperature 6 minutes max. Package Reflow Conditions Pkg. thickness ≥2.5mm And all bgas Pkg. thickness <2.5mm and pkg. volume ≥350mm3 Pkg. thickness < 2.5mm and pkg. Volume <350mm3 Convection 220 +5/-0 ¥ Convection 235 +5/-0 ¥ VPR 215-219¥ VPR 235 +5/-0 ¥ IR/Convection 220 +5/-0¥ IR/Convection 235 +5/-0 ¥ Reliability test program Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245 ¥, 5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125 ¥ PCT JESD-22-B, A102 168 Hrs, 100% RH,121 ¥ TST MIL-STD 883D-1011.9 -65 ¥ ~ 150¥, 200 Cycles Carrier Tape & Reel Dimensions

Dual P-Channel Enha ncement Mode Mosfet www.artschip.com 7 Application A B C J T1 T2 W P E F D D1 Po P1 Ao Bo Ko t SOP-8 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP-8 12 9.3 2500