APM4034NU DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=23A,RDS(ON)<30mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 23 A Continuous Drain Current-TC=100℃ 14.5 Pulsed Drain Current1 92 EAS Single Pulse Avalanche Energy --- mJ PD Power Dissipation(TC=25℃) 25 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 5 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62 D S G APM4034NU All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=40V, TJ=25℃ --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.6 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=12A --- 25 30 mΩ VGS=4.5V,ID=10A --- 32 40 GFS Forward Transconductance VDS=10V, ID=3A --- 9 --- S Dynamic Characteristics Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 420 800 pF Coss Output Capacitance --- 65 120 Crss Reverse Transfer Capacitance --- 40 80 Switching Characteristics td(on) Turn-On Delay Time2,3 VDD=20V , VGS=4.5V , RG=25,ID=1A --- 3.2 6 ns tr Rise Time2,3 --- 8.6 16 ns td(off) Turn-Off Delay Time2,3 --- 18 36 ns tf Fall Time2,3 --- 6 12 ns Qg Total Gate Charge2,3 VGS=4.5V, VDS=20V, ID=5A --- 4.5 10 nC Qgs Gate-Source Charge 2,3 --- 1.5 2.4 nC Qgd Gate-Drain “Miller” Charge2,3 --- 1.9 5 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=10A, TJ=25℃ --- --- 1 V APM4034NU All d ata sheet.com
www.doingter.cn — 3 — Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Typical Characteristics： (TC=25℃ unless otherwise noted) Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Waveform APM4034NU All d ata sheet.com
— 4 — Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area APM4034NU 0086-0755-8278-9056 www.doingter.cn All d ata sheet.com