APJ14N65F APME | Alldatasheet
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APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET APJ14N65F/P/TRVE1.0 永源微電子科技有限公司
Description
TheAPJ14N65F/P/TisCoolFETII MOSFETfamily thatisutilizingchargebalancetechnologyforextremely lowon-resistanceandlowgatechargeperformance. APJ14N65F/P/Tissuitableforapplicationswhichrequire superiorpowerdensityandoutstandingefficiency GeneralFeatures VDS =650V（Type：730V） IDM=14A RDS(ON) <650mΩ@VGS=10V（Type：560mΩ） Application UninterruptiblePower Supply(UPS) PowerFactorCorrection(PFC) PackageMarkingandOrderingInformation ProductID Pack Marking Qty(PCS) APJ14N65F TO-220F-3L APJ14N65FXXXYYYY 1000 APJ14N65P TO-220-3L APJ14N65PXXXYYYY 1000 APJ14N65T TO-263-3L APJ14N65TXXXYYYY 1000 AbsoluteMaximumRatings(TC=25℃unlessotherwisenoted) Symbol Parameter Value Unit VDSS Drain-SourceVoltage(VGS =0V) 650 V ID ContinuousDrainCurrent 8 A IDM PulsedDrainCurrent (note1) 14 A VGS Gate-SourceVoltage ±30 V EAS SinglePulseAvalancheEnergy(note2) 125 mJ PD PowerDissipation(TC =25ºC) 25.5 W TJ,Tstg OperatingJunctionandStorageTemperatureRange -55~+150 ºC RthJC ThermalResistance,Junction-to-Case 4.9 ºC/W RthJA ThermalResistance,Junction-to-Ambient 49 ºC/W
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET APJ14N65F/P/TRVE1.0 永源微電子科技有限公司 22 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Testconditions Min. Typ. Max. Unit BVDSS Draintosourcebreakdownvoltage VGS=0V,ID=250uA 650 700 -- V ΔBVDSS /ΔTJ Breakdownvoltagetemperature coefficient ID=250uA,referencedto25oC -- 0.7 -- V/oC IDSS Draintosourceleakagecurrent VDS=650V,VGS=0V -- -- 1 uA VDS=520V,TC=125oC -- -- 50 uA IGSS Gatetosourceleakagecurrent,forward VGS=30V,VDS=0V -- -- 100 nA Gatetosourceleakagecurrent,reverse VGS=-30V,VDS=0V -- -- -100 nA VGS(TH) Gatethresholdvoltage VDS=VGS,ID=250uA 2.5 3.3 4.5 V RDS(ON) Draintosourceonstateresistance VGS=10V,ID =3.2A -- 560 650 mΩ Ciss Inputcapacitance VGS=0V,VDS=100V,f=1MHz -- 438 -- pFCoss Outputcapacitance -- 19.5 -- Crss Reversetransfercapacitance -- 1.32 -- td(on) Turnondelaytime VDS=400V,ID=3.2A， RG=4.7Ω ,VGS=10V -- 84.8 -- ns tr Risingtime -- 25.2 -- td(off) Turnoffdelaytime -- 227.6 -- tf Falltime -- 26.8 -- Qg Totalgatecharge VDS=480V,VGS=10V,ID=3.2A -- 11 nC Qgs Gate-sourcecharge -- 2.1 -- Qgd Gate-draincharge -- 5.6 -- IS Continuoussourcecurrent Integralreversep-nJunction diodeintheMOSFET -- -- 11 A ISM Pulsedsourcecurrent -- -- 44 A VSD Diodeforwardvoltagedrop. IS=3.2A,VGS=0V -- 0.7 1.5 V Trr Reverserecoverytime IS=3.2A,VGS=0V,Vdd=400V, dIF/dt=100A/us, -- 313 -- ns Qrr ReverserecoveryCharge -- 0.877 -- uC Note: 1、The data tested bysurface mountedon a1inch2 FR-4boardwith 2OZ copper. 2、The EAS data shows Max. rating .L=0.5mH,IAS=3.2A,VDD =50V,RG=25Ω 3、The testcondition isPulseTest:ISD ≤ID,di/dt =100A/us,VDD≤BVDSS,Starting at TJ=25℃ 4、The power dissipationislimited by150℃ junction temperature 5、The data istheoreticallythe same asID and IDM ,in real applications,should be limited bytotalpower dissipation.
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET APJ14N65F/P/TRVE1.0 永源微電子科技有限公司 33 TypicalCharacteristics Figure1:Powerdissipation(NonFullPAK) Figure2:Powerdissipation(FullPAK) Figure3:Max.transientthermalimpedance Figure4:Max.transientthermalimpedance Figure5:Safeoperatingarea(NonFullPAK) Figure6:Safeoperatingarea(FullPAK)
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET APJ14N65F/P/TRVE1.0 永源微電子科技有限公司 44 Figure7:Typ.outp utcharacteristics Figure8:Typ.outputcharacteristics Figure9:Typ.drain-sourceon-stateresistance Figure10:drain -sourceon-stateresistance Figure11: Type. transfer characteristics Figure12: Type. gate charge
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET APJ14N65F/P/TRVE1.0 永源微電子科技有限公司 55 PackageMechanicalData-TO-X
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET APJ14N65F/P/TRVE1.0 永源微電子科技有限公司 66
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET APJ14N65F/P/TRVE1.0 永源微電子科技有限公司 77 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2018/1/31 Initial release