APJ100N65F

APJ100N65F APME | Alldatasheet

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APJ100N65FIPIT (AP65R090) 650V N-Channel Enhancement Mode MOSFET APJ100N65F/P/T RVE1.0 永源微電子科技有限公司

Description

The APJ100N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ100N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features VDS = 650V （Type：740V） IDM =100A RDS(ON) < 90mΩ @ VGS=10V （Type：78mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) APJ100N65F TO-220F-3L APJ100N65F XXX YYYY 1000 APJ100N65P TO-220-3L APJ100N65P XXX YYYY 1000 APJ100N65T TO-263-3L APJ100N65T XXX YYYY 1000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage (VGS = 0V) 650 V ID Continuous Drain Current 36 A IDM Pulsed Drain Current (note1) 108 A VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy (note2) 1000 mJ PD Power Dissipation (TC = 25ºC) 278 W TJ, Tstg Operating Junction and Storage Temperature Range -55~+150 ºC RthJC Thermal Resistance, Junction-to-Case 0.45 ºC/W RthJA Thermal Resistance, Junction-to-Ambient 62 ºC/W

APJ100N65FIPIT (AP65R090) 650V N-Channel Enhancement Mode MOSFET APJ100N65F/P/T RVE1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage VGS=0V, ID=1mA 650 740 - V V(GS)th Gate threshold voltage VDS=VGS, ID=1mA 2.0 3.0 5.0 V IDSS Zero gate voltage drain current VDS=650V, VGS=0V, Tj=25°C - - 10 μA IGSS Gate-source leakage current VGS=±30V, VDS=0V - - ±100 nA RDS(on) Drain-source on-state resistance VGS=10V, ID=18A, Tj=25°C - 78 90 mΩ RG Gate resistance VDD=0V,VGS=0V,F=1MHz - 10 - Ω Ciss Input capacitance VGS=0V, VDS=50V, f=250KHz - 2600 - pF Coss Output capacitance - 147 - pF Crss Reverse transfer capacitance - 10 - pF td(on) Turn-on delay time VDD=400V, VGS=10V, ID=18A - 54 - ns tr Rise time - 69 - ns td(off) Turn-off delay time - 123 - ns tf Fall time - 20 - ns Qgs Gate to source charge VDD=400V, ID=18A, VGS=0 - 10 - nC Qgd Gate to drain charge - 24 - nC Qg Gate charge total - 63 - nC Vplateau Gate plateau voltage - 3.5 - V VSD Diode forward voltage VGS=0V, IF=18A, Tf=25°C - 0.9 - V trr Reverse recovery time VR=400V, IF=18A, diF/dt=100A/μs - 161 - ns Qrr Reverse recovery charge - 1.64 - μC Irrm Peak reverse recovery current - 15 - A Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The EAS data shows Max. rating . L=0.5mH, IAS =7A, VDD =50V, RG=25Ω 3、The test condition is Pulse Test: ISD ≤ ID, di/dt = 100A/us, VDD≤ BVDSS, Starting at TJ =25℃ 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

APJ100N65FIPIT (AP65R090) 650V N-Channel Enhancement Mode MOSFET APJ100N65F/P/T RVE1.0 永源微電子科技有限公司 Typical Characteristics Figure1: Power dissipation (Non FullPAK) Figure2: Power dissipation (FullPAK) Figure3: Max. transient thermal impedance Figure4:Max. transient thermal impedance Figure5: Safe operating area Figure6: Safe operating area

APJ100N65FIPIT (AP65R090) 650V N-Channel Enhancement Mode MOSFET APJ100N65F/P/T RVE1.0 永源微電子科技有限公司 Package Mechanical Data-TO-220F-3L-DX Symbol Common mm Min. Max. A 9.95 10.25 A1 4.5 5.0 B 2.95 3.25 C 1.25 1.45 D 12.80 13.20 E 0.40 0.60 F 2.8 3.5 G 1.30 1.45 H Typ 2.54 I Typ 5.08 J 4.60 4.75 K 2.45 2. 65 L 6.5 6.8 M 15.4 16.0 N 2.75 3.05 O 0.45 0.55 P 0.70 0.90

APJ100N65FIPIT (AP65R090) 650V N-Channel Enhancement Mode MOSFET APJ100N65F/P/T RVE1.0 永源微電子科技有限公司 Package Mechanical Data-TO-220-3L-SLK Symbol Common mm Mim Nom Max A 4.27 4.57 4.87 A1 1.15 1.30 1.45 A2 2.10 2.40 2.70 b 0.70 0.80 1.00 b2 1.17 1.27 1.50 D 0.40 0.50 0.65 D1 8.80 9.10 9.40 D2 5.70 6.70 7.00 E 9.70 10.00 10.30 E1 - 8.70 - E2 9.63 10.00 10.35 E3 7.00 8.00 8.40 e 0.37 e1 0.10 H1 6.00 6.50 6.85 L 12.75 13.50 13.90 L1 - 3.10 3.40 Φp 3.45 3.60 3.75 Q 2.60 2.80 3.00 θ1 4° 7° 10° θ2 0° 3° 6° F 13.30 13.50 13.70 F1 15.50 15.90 16.30 F2 2.80 3.00 3.20

APJ100N65FIPIT (AP65R090) 650V N-Channel Enhancement Mode MOSFET APJ100N65F/P/T RVE1.0 永源微電子科技有限公司 Package Mechanical Data-TO-263-3L-SLK Symbol Common mm Mim Nom Max A 4.35 4.47 4.60 A1 0.09 0.10 0.11 A2 2.30 2.40 2.70 b 0.70 0.80 1.00 b2 1.25 1.36 1.50 C 0.45 0.50 0.65 C1 1.29 1.30 9.40 D 9.10 9.20 9.30 D1 7.90 8.00 8.10 E 9.85 10.00 10.20 E1 7.90 8.00 8.10 H 15.30 15.50 15.70 e - 2.54 - L 2.34 2.54 2.74 L1 1.00 1.10 1.20 L2 1.30 1.40 1.50 R 0.24 0.25 0.26 θ 0° 4° 8° Θ1 4° 7° 10° Θ2 0° 3° 6°

APJ100N65FIPIT (AP65R090) 650V N-Channel Enhancement Mode MOSFET APJ100N65F/P/T RVE1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

APJ100N65FIPIT (AP65R090) 650V N-Channel Enhancement Mode MOSFET APJ100N65F/P/T RVE1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2021/4/31 Initial release