APG120N12NF APME | Alldatasheet

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120V N-Channel Enhancement Mode MOSFET APG120N12F RVE1.0 永源微電子科技有限公司

Description

TheAPG120N12NFusesadvancedSGTIItechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS =120V ID =120A RDS(ON) <6.8mΩ@VGS=10V（Type：6.0mΩ） Application Mobilephonefastcharging Brushlessmotor Homeappliancecontrolboard PackageMarkingandOrderingInformation ProductID Pack Marking Qty(PCS) APG120N12NF PDFN5*6-8L APG120N12NFXXXYYYY 5000 AbsoluteMaximum Ratings (TC=25℃unlessotherwise noted) Symbol Parameter Value Units VDSS Drain-to-SourceVoltage 120 V ID@TA=25℃ ContinuousDrainCurrent1 120 A ID@TA=70℃ ContinuousDrainCurrent1 70 A IDMa1 PulsedDrainCurrent 320 A EASa2 Singlepulseavalancheenergy 240 mJ IAR Singlepulseavalanchecurrent 40 A VGS Gate-to-SourceVoltage ±20 V PD PowerDissipation 125 W TJ，Tstg OperatingJunctionandStorageTemperatureRange -55to150 ℃ TL MaximumTemperatureforSoldering 300 ℃ RθJC ThermalResistance,Junction-to-Case 1.0 ℃/W RθJA ThermalResistance,Junction-to-Ambient 50 ℃/W

120V N-Channel Enhancement Mode MOSFET APG120N12F RVE1.0 永源微電子科技有限公司 ElectricalCharacteristics(TJ=25℃,unlessotherwisenoted) Symbol Parameter TestConditions Min. Typ. Max. Units VDSS DraintoSourceBreakdownVoltage VGS=0V,ID=250µA 120 135 -- V IDSS DraintoSourceLeakageCurrent VDS =120V,VGS=0V -- -- 1 µA IGSS(F) GatetoSourceForwardLeakage VGS =+20V -- -- 100 nA IGSS(R) GatetoSourceReverseLeakage VGS =-20V -- -- -100 nA VGS(TH) GateThresholdVoltage VDS=VGS,ID =250µA 1.2 1.8 3.0 V RDS(ON)1 Drain-to-SourceOn-Resistance VGS=10V,ID=20A -- 6.0 6.8 mΩ RDS(ON)1 Drain-to-SourceOn-Resistance VGS=4.5V,ID=10A -- 8.5 10 mΩ gFS ForwardTransconductance VDS=5V,ID=50A 130 -- S Ciss InputCapacitance VGS=0V VDS =50Vf= 1.0MHz -- 4282 -- pF Coss OutputCapacitance -- 429 -- pF Crss ReverseTransferCapacitance -- 17 -- pF Rg Gateresistance -- 2.5 -- Ω td(ON) Turn-onDelayTime ID =20A VDS =50V VGS =10V RG =5Ω -- 20 -- ns tr RiseTime -- 11 -- ns td(OFF) Turn-OffDelayTime -- 55 -- ns tf FallTime -- 28 -- ns Qg TotalGateCharge VGS =0~10V VDS =50V ID =20A -- 61.4 -- nC Qgs GateSourceCharge -- 17.4 -- nC Qgd GateDrainCharge -- 14.1 -- nC IS DiodeForwardCurrent TC =25°C -- -- 100 A ISM DiodePulseCurrent -- -- 320 A VSD DiodeForwardVoltage IS=6.0A,VGS=0V -- -- 1.2 V trr ReverseRecoverytime IS=20A,VDD=50V dIF/dt=100A/μs -- 100 -- ns Qrr ReverseRecoveryCharge -- 250 -- nC Note: 1、Thedatatestedbysurfacemountedona1inch2 FR-4boardwith2OZcopper. 2、Thedatatestedbypulsed,pulsewidth≦ 300us,dutycycle≦ 2% 3、TheEASdatashowsMax.rating.ThetestconditionisVDD=50V,L=0.3mH,Rg=25Ω,StartingTJ=25℃ 4、Thepowerdissipationislimitedby150℃ junctiontemperature

120V N-Channel Enhancement Mode MOSFET APG120N12F RVE1.0 永源微電子科技有限公司 TypicalCharacteristics Figure1: output characteristics Figure2: Typcal drain-source on resistance Figure3: transfer characteristics Figure4: forward transconductance Figure5：Drain-source on-state resistance Figure6: Typ. capacitances

120V N-Channel Enhancement Mode MOSFET APG120N12F RVE1.0 永源微電子科技有限公司 Figu re7：Typ. gate charge Figure8：Drain-source breakdown voltage Figure9：Safe operating area Figure10：Max. transient thermal impedance

120V N-Channel Enhancement Mode MOSFET APG120N12F RVE1.0 永源微電子科技有限公司 Symbol Common mm Inch Mim Max Min Max A 1.03 1.17 0.0406 0.0461 b 0.34 0.48 0.0134 0.0189 c 0.824 0.0970 0.0324 0.082 D 4.80 5.40 0.1890 0.2126 D1 4.11 4.31 0.1618 0.1697 D2 4.80 5.00 0.1890 0.1969 E 5.95 6.15 0.2343 0.2421 E1 5.65 5.85 0.2224 0.2303 E2 1.60 / 0.0630 / e 1.27 BSC 0.05 BSC L 0.05 0.25 0.0020 0.0098 L1 0.38 0.50 0.0150 0.0197 L2 0.38 0.50 0.0150 0.0197 H 3.30 3.50 0.1299 0.1378 I / 0.18 / 0.0070

120V N-Channel Enhancement Mode MOSFET APG120N12F RVE1.0 永源微電子科技有限公司

120V N-Channel Enhancement Mode MOSFET APG120N12F RVE1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2020/11/1 Initial release