APG100N10D APME | Alldatasheet
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100V N-Channel Enhancement Mode MOSFET APG100N10D RVE1.0 永源微電子科技有限公司
Description
The APG100N10D uses advanced APM-SGTⅠⅠ technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =100A RDS(ON) < 8.0mΩ @ VGS=10V (Type：6.0mΩ) Application Isolated DC Motor control Synchronous-rectification Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) APG100N10D TO-252-3L APG100N10D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current1 100 A ID@TA=70℃ Continuous Drain Current1 68 A IDM Pulsed Drain Current2 210 A EAS Single Pulse Avalanche Energy3 100 mJ IAS Avalanche Current 40 A PD@TA=25℃ Total Power Dissipation4 100 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJC Thermal Resistance Junction-Case1 1.25 ℃/W
100V N-Channel Enhancement Mode MOSFET APG100N10D RVE1.0 永源微電子科技有限公司 Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 108 --- V RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=13.5A --- 6.0 8.0 mΩ Static Drain-Source On-Resistance2 VGS=4.5V , ID=11.5A --- 8.7 10.5 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.3 V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=13.5A --- 75 --- S Qg Total Gate Charge (10V) VDS=50V , VGS=10V , ID=13.5A --- 45 --- nC Qg Total Gate Charge (4.5V) --- 19.3 --- Qgs Gate-Source Charge --- 9.5 --- Qgd Gate-Drain Charge --- 4.8 --- Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3Ω, ID=13.5A --- 10 --- ns Tr Rise Time --- 6.5 --- Td(off) Turn-Off Delay Time --- 45 --- Tf Fall Time --- 7.5 --- Ciss Input Capacitance VDS=50V , VGS=0V , f=1MHz --- 3320 --- pF Coss Output Capacitance --- 605 --- Crss Reverse Transfer Capacitance --- 20 --- IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 5 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.1 V trr Reverse Recovery Time IF=13.5A , di/dt=100A/µs , TJ=25℃ --- 33 --- nS Qrr Reverse Recovery Charge --- 150 --- nC Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=72V,VGS=10V, L=0.1mH IAS=40A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation
100V N-Channel Enhancement Mode MOSFET APG100N10D RVE1.0 永源微電子科技有限公司
100V N-Channel Enhancement Mode MOSFET APG100N10D RVE1.0 永源微電子科技有限公司
100V N-Channel Enhancement Mode MOSFET APG100N10D RVE1.0 永源微電子科技有限公司 Package Mechanical Data:TO-252-3L Dimensions Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D TO-252 Reel Spectification-TO-252 W EF D0 P0 P2 T A A A A B B B B Dimensions Millimeters InchesRef. W E F T 15.90 1.65 7.40 1.40 16.10 1.85 7.60 1.60 0.626 0.065 0.291 0.055 0.634 0.073 0.299 0.063 1.40 1.60 7.90 10.45 10.60 0.411 0.417 0.24 0.27 0.009 0.011 0.055 0.063 3.90 4.10 6.90 0.271 10P0 0.154 0.161 8.10 0.311 0.319 1.90 2.10 0.075 0.083 0.10 0.004 40.00 1.575 2.78 0.109 Φ329 Φ13 16.00 1.75 7.50 1.50 1.50 4.00 8.00 2.00 10.50 0.630 0.069 0.295 0.059 0.059 0.157 0.315 0.079 0.413 6.85 7.00 2.68 2.88 0.270 0.276 0.105 0.113 39.80 40.20 1.567 1.583
100V N-Channel Enhancement Mode MOSFET APG100N10D RVE1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.
100V N-Channel Enhancement Mode MOSFET APG100N10D RVE1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2021/1/31 Initial release