APD03N60AI APME | Alldatasheet

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600V N-Channel Depletion Mode MOSFET APD03N60AI RVE1.0 臺灣永源微電子科技有限公司

Description

The APD03N60AI uses advanced Depletion planar technology This have low gate charge and operation . This device is suitable for use as a Switching applic ation. General Features VDS = 600V I D =0.03A RDS(ON) < 700Ω @ VGS=10V ESD≥300V Application Load Switch Power management Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) APD03N60AI F501D 3000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ± 20 V ID Continuous Drain CurrentTA = 25℃ 0.03 A Continuous Drain CurrentTA = 100℃ 0.02 A IDM Pulsed Drain Current note1 0.12 A dv/dt Peak Diode Recovery dv/dt 5.0 V/ns VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 300 V PD Power Dissipation TA = 25℃ 0.5 W RθJA Thermal Resistance, Junction to Ambient 250 ℃/W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ SOT-23

600V N-Channel Depletion Mode MOSFET APD03N60AI RVE1.0 臺灣永源微電子科技有限公司 Electrical Characteristics (TC=25℃unless otherwise noted) Notes: 1、Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2、 Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-Source Breakdown Voltage VGS= -5V, ID=250μA 600 - - V ID(off) Off-state Drain to Source Current VDS=600V, VGS= -5V,TJ=25° C - - 0.1 μA VDS=480V, VGS=-5V,TJ=125° C - - 10 μA IGSS Gate to Source Leakage Current VDS =0V, VGS = ± 20V - - ± 100 nA IDSS On-state drain current VGS=0V, VDS=25V 12 - - mA VGS(th) Gate Threshold Voltage VDS=3V, ID=8μA -2.7 -1.8 -1.0 V RDS(on) Static Drain-Source on-Resistance note2 VGS=0V, ID=3mA - 350 700 Ω VGS=10V, ID=16mA - 400 800 Ciss Input Capacitance VDS =25V, VGS =-5V, f = 1.0MHz - 50 - pF Coss Output Capacitance - 4.53 - pF Crss Reverse Transfer Capacitance - 1.08 - pF Qg Total Gate Charge VDS =400V, ID =0.01A, VGS =-5V to 5V - 1.14 - nC Qgs Gate-Source Charge - 0.5 - nC Qgd Gate-Drain(“Miller”) Charge - 0.37 - nC td(on) Turn-on Delay Time VDS=300V, ID=0.01A, RGEN=6Ω, VGS =-5V to 7V - 9.9 - ns tr Turn-on Rise Time - 55.8 - ns td(off) Turn-off Delay Time - 56.4 - ns tf Turn-off Fall Time - 136 - ns IS Maximum Continuous Drain to Source Diode Forward Current - - 0.03 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 0.12 A VSD Diode Forward Voltage IF=16mA, VGS=-5V - - 1.2 V trr Reverse Recovery Time VGS =-5V, IF=0.01A, di/dt=100A/μs - 243 - ns Qrr Reverse Recovery Charge - 636 - nC

600V N-Channel Depletion Mode MOSFET APD03N60AI RVE1.0 臺灣永源微電子科技有限公司 Package Mechanical Data-SOT-23 Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8°

600V N-Channel Depletion Mode MOSFET APD03N60AI RVE1.0 臺灣永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

600V N-Channel Depletion Mode MOSFET APD03N60AI RVE1.0 臺灣永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2020/6/19 Initial release