AP9962AGP-HF DOINGTER | Alldatasheet
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www.doingter.cn 1— — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=40V,ID=60A,RDS(ON)<8.5mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) G D S Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 60 AContinuous Drain Current-TC=100℃ 42 Pulsed Drain Current2 220 EAS Single Pulse Avalanche Energy3 470 mJ PD Power Dissipation4 73 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 2.1 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 --- All d ata sheet.com
www.doingter.cn 2— — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 45 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=40V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.5 1.9 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=20A --- 8.5 11 mΩ VGS=4.5V,ID=20A --- 12.5 16 GFS Forward Transconductance VDS=10V, ID=20A 15 --- --- S Dynamic Characteristics Ciss Input Capacitance --- 1800 --- Coss Output Capacitance VDS=20V, VGS=0V, f=1MHz --- 280 --- pF Crss Reverse Transfer Capacitance --- 190 --- Switching Characteristics td(on) Turn-On Delay Time VDD=20V, ID=2A, RGEN=3 Ω.VGS=10V --- 6.4 --- ns tr Rise Time --- 17.2 --- ns td(off) Turn-Off Delay Time --- 29.6 --- ns tf Fall Time --- 16.8 --- ns Qg Total Gate Charge --- 29 --- nC Qgs Gate-Source Charge VGS=10V, VDS=20V, --- 4.5 --- nC Qgd Gate-Drain “Miller” Charge ID=20A --- 6.4 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=10A --- --- -1.2 V All d ata sheet.com
www.doingter.cn 5— — SquareWavePluseDuration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),NormalizedEffective TransientThermalImpedance 0086-0755-8278-9056 All d ata sheet.com