AP9950GP DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=70V,ID=68A,RDS(ON)<8.4mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) G D S Symbol Parameter Ratings Units VDS Drain-Source Voltage 70 V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current- 68 AContinuous Drain Current-TC=100℃ 47.6 Pulsed Drain Current1 272 EAS Single Pulse Avalanche Energy2 380 mJ PD Power Dissipation 88 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.7 ℃/W RƟJA Thermal Resistance,Junction to Ambient --- Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAScondition:TJ=25℃,VDD=33V,VG=10V All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 70 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=68V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±25V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=70A --- 7 8.4 mΩ GFS Forward Transconductance VDS=10V, ID=15A 18 --- --- S Dynamic Characteristics Ciss Input Capacitance --- 2860 --- Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz --- 281 --- pF Crss Reverse Transfer Capacitance --- 265 --- Switching Characteristics td(on) Turn-On Delay Time VDD=30V, ID=2A, RGEN=15 Ω.VGS=10V --- 18 --- ns tr Rise Time --- 29 --- ns td(off) Turn-Off Delay Time --- 55 --- ns tf Fall Time --- 27 --- ns Qg Total Gate Charge --- 77 --- nC Qgs Gate-Source Charge VGS=10V, VDS=50V, --- 15.7 --- nC Qgd Gate-Drain “Miller” Charge ID=40A --- 35.2 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage1 VGS=0V,IS=40A --- 0.89 0.99 V Ls Diode Forward Current --- --- --- 68 A All d ata sheet.com
www.doingter.cn — 3 — Trr Reverse Recovery Time1 TJ=25℃,IF=75A di/dt=100A/μs --- 33 --- NS Qrr Reverse Recovery Charge1 --- 26 --- NC Notes: 1.Pulse Test: Pulse Width ≤300μs, Duty Cycle ≤ 1.5%, RG=25Ω,Starting TJ=25℃ Typical Characteristics： (TC=25℃ unless otherwise noted) Figure1. Output Characteristics Figure2. Transfer Characteristics VDS Drain-SourceVoltage(V) VGS Gate-Source Voltage(V) FigureB3V. DSS vs Junction Temperature Figure4. ID vs Junction Temperature Normalized BVDSS ID-Drain Current (A) ID-Drain Current(A) ID-Drain Current (A) All d ata sheet.com
www.doingter.cn — 4 — Tc =25℃ Figure5. VGS(th) vs Junction Temperature Figure6. Rdson Vs Junction Temperature Temperature（℃） Figure7. Gate Charge Figure8. Capacitance vs Vds QgGate Charge (nC) VDS Drain-Source Voltage (V) Figure9. Source- Drain Diode Forward Figure10. Safe Operation Area VSD Source-DrainVoltage(V) VDS Drain-Source Voltage(V) IS-Source Drain Current VGS (Volts) ID-Drain Current(A) C Capacitance (pF) All d ata sheet.com
www.doingter.cn — 5 — Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) 0086-0755-8278-9056 R(t), Normalized Effective Transient Thermal Impedance All d ata sheet.com