AP9930GM-HF

AP9930GM-HF DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel and P-Channel MOSFET use advanced trench Technology To provide excellent RDS(ON)，low gate charge. D1 This device may be usedto form a level shifted highside switch, D2 S1 D2 and for a host ofother application. G1 Features： G2 1) N-Channel:V DS=30V,ID= 6A,RDS(ON)<32mΩ@VGS=10V P-Channel: VDS=-30V,ID=-6A,RDS(ON)<65mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±12 ±12 V ID Continuous Drain Current- Tj=150℃A 6 -6 A Continuous Drain Current-TC=70℃A 5.8 -5 IDM Pulsed Drain CurrentB ±30 A PD Power Dissipation Ta=25℃ 2 W Pulsed Drain Current Ta=25℃ 1.44 ℃/ W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter N-Channel P-Channel Units RƟJA Thermal Resistance,Junction to AmbientA 110 ℃/W All d ata sheet.com

www.doingter.cn — 2 — N-Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=-0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=24V --- --- 1 μA --- --- 5 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.7 --- 1.3 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=6A --- 24 32 mΩVGS=10V I D=6A VGS=4.5V,ID=5A --- 27 36 mΩ GFS Forward Transconductance VDS=5V, ID=5A --- 9 --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 680 --- pFCoss Output Capacitance --- 102 --- Crss Reverse Transfer Capacitance --- 77 --- Rg Gate resistance VDS=0V V GS=0V f=1.0MHz --- 3 --- Ω Switching Characteristics td(on) Turn-On Delay Time VDs=-15V, RGEN=2.1 Ω,VGS=10V --- 4.6 --- ns tr Rise Time --- 4.1 --- ns td(off) Turn-Off Delay Time --- 20.6 --- ns tf Fall Time --- 5.2 --- ns All d ata sheet.com

www.doingter.cn — 3 — Qg Total Gate Charge VGS=10V, VDS=15V, --- 13.84 --- nC --- 6.74 --- nC Qgs Gate-Source Charge ID=6A --- 1.82 --- nC Qgd Gate-Drain “Miller” Charge --- 3.2 --- nC Drain-Source Diode Characteristics Qrr Reverse Recovery Charge IF=6A dI/dt=100A/μs --- 7.8 --- NC P-Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=-0V,ID=250μA -30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-24V --- --- -1 VGS=0V, VDS=-24V --- --- -5 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -0.5 -0.7 -1.3 V ID On statedraincurrent VGS=-5V, VDS=-4.5V 6 --- --- A RDS(ON) Drain-Source On Resistance VGS=-10V,ID=-6A --- 52 65 mΩ VGS=-4.5V,ID=-5A --- 59 75 GFS Forward Transconductance VDS=-5V, ID=-5A --- 12 --- S Dynamic Characteristics Ciss Input Capacitance --- 920 --- Coss Output Capacitance VDS=-15V, VGS=0V, f=1MHz --- 190 --- pF Crss Reverse Transfer Capacitance --- 122 --- Switching Characteristics td(on) Turn-On Delay Time VDD=-15V, ID=-6A, RGEN=3Ω,VGS=-10V --- 7.7 --- ns tr Rise Time --- 5.7 --- ns td(off) Turn-Off Delay Time --- 20.2 --- ns All d ata sheet.com

www.doingter.cn — 4 — tf Fall Time --- 9.5 --- ns Qg Total Gate Charge VGS=-10V, VDS=-15V, --- 18.5 --- nC --- 9.6 --- nC Qgs Gate-Source Charge ID=-6A --- 2.7 --- nC Qgd Gate-Drain “Miller” Charge --- 4.5 --- nC Drain-Source Diode Characteristics Qrr Reverse Recovery Charge IF=-6A dI/dt=100A/μs --- 8.8 --- NC Trr Body Diode Reverse Recovery Time IF=-6A dI/dt=100A/μs --- 20 --- Notes: A:The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B:Repetitive rating, pulse width limited by junction temperature. C.TheR θJA is the sum ofthe thermalimpedance from junction to lead RθJL and lead toambient. D.The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5% max. E.Thesetests are performedwith the devicemounted on1in2 FR-4board with 2oz. Copper,in astill air environment with TA=25°C. The SOA curve provides a single pulserating. N-Typical Characteristics： (TC=25℃ unless otherwise noted) All d ata sheet.com

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www.doingter.cn — 7 — P -Typical Characteristics：(TC=25℃ unless otherwise noted) All d ata sheet.com

www.doingter.cn 8 —— AP9930GM -HF 0086-0755-8278-9056 All d ata sheet.com