AP9565GEJ DOINGTER | Alldatasheet
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www.doingter.cn — 1 — G Description： This P-Channel MOSFET uses advanced trench technology and D design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： D S 1) VDS=-40V,ID=-36A,RDS(ON)<21mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current -36 AContinuous Drain Current-TC=100℃ -25 IDM Pulsed Drain Current1 -144 PD Power Dissipation TC=25℃ 60 mJ Power Dissipation TC=100℃ 30 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 2.5 ℃/W All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=-250μA -40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-40V --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -1.1 -1.7 -2.5 V RDS(ON) Drain-Source On Resistance VGS=-10V,ID=-20A --- 15 21 mΩ VGS=-4.5V,ID=-15A --- 21 32 GFS Forward Transconductance VDS =-5V, ID=-5A 15 --- --- S Dynamic Characteristics Ciss Input Capacitance --- 2050 --- Coss Output Capacitance VDS=-20V, VGS=0V, f=1MHz --- 260 --- pF Crss Reverse Transfer Capacitance --- 150 --- Switching Characteristics td(on) Turn-On Delay Time VDS=-20V, RL=1.6Ω RGEN=3Ω, VGS=-10V --- 10 --- ns tr Rise Time --- 24 --- ns td(off) Turn-Off Delay Time --- 40 --- ns tf Fall Time --- 9 --- ns Qg Total Gate Charge --- 45 --- nC Qgs Gate-Source Charge VGS=-10V, VDS=-20V, --- 6 --- nC Qgd Gate-Drain “Miller” Charge ID=-8A --- 11 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=-10A, --- --- -1.2 V All d ata sheet.com
www.doingter.cn — 3 — ISD Source-Drain Current(Body Diode) --- --- -36 A Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature Typical Characteristics： (TC=25℃ unless otherwise noted) Figure1. Power Dissipation Figure2. Drain Current TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure3. Output Characteristics Figure4. Transfer Characteristics Power Dissipation(W) -ID Drain Current(A) All d ata sheet.com
Figure5. Capacitance Figure6. RDS(ON) vs Junction Temperature -VDS Drain-to-Source Voltage(V) Figure7. VGS(th) vs Junction Temperature Figure8. Gate Charge Waveforms Qg(nC) Figure9. Normalized Maximum Transient Thermal Impedance www.doingter.cn 0086-0755-8278-9056 — 4 — C Capacitance(pF) -Vgs (V) All d ata sheet.com