AP93T08GP-HF DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=80V,ID=160A,RDS(ON)<4.7mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) G D S Symbol Parameter Ratings Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 160 AContinuous Drain Current-TC=100℃ 113 Pulsed Drain Current 500 EAS Single Pulse Avalanche Energy5 1936 mJ PD Power Dissipation 285 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case2 0.53 ℃/W All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 80 88 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=80V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 3 4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 3.7 4.7 mΩ GFS Forward Transconductance VDS=5V, ID=20A 60 --- --- S Dynamic Characteristics4 Ciss Input Capacitance --- 6500 --- Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz --- 810 --- pF Crss Reverse Transfer Capacitance --- 310 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=40V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω --- 31.5 --- ns tr Rise Time --- 33 --- ns td(off) Turn-Off Delay Time --- 46 --- ns tf Fall Time --- 17.5 --- ns Qg Total Gate Charge --- 130 --- nC Qgs Gate-Source Charge VGS=10V, VDS=40V, --- 36 --- nC Qgd Gate-Drain “Miller” Charge ID=20A --- 46 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=40A --- --- 1.2 V All d ata sheet.com
www.doingter.cn — 3 — Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t≤ 10 sec. 3. Pulse Test: Pulse Width≤ 300μs, Duty Cycle≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω Typical Characteristics： (TC=25℃ unless otherwise noted) All d ata sheet.com
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www.doingter.cn — 5 — 0086-0755-8278-9056 All d ata sheet.com