AP85T08GP-HF DOINGTER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=80V,ID=70A,RDS(ON)<8mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) G D S Symbol Parameter Ratings Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current- APulsed Drain Current2 210 EAS Single Pulse Avalanche Energy5 60 mJ PD Power Dissipation3 125 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1 ℃/W RƟJA Thermal Resistance,Junction to Ambient4 62 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 80 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=80V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=12A --- 6.6 8 VGS=4.5V,ID=10A --- 8.5 10 mΩ Dynamic Characteristics Ciss Input Capacitance --- 3056.3 --- Coss Output Capacitance VDS=40V, VGS=0V, f=1MHz --- 963.5 --- pF Crss Reverse Transfer Capacitance --- 45.9 --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V, RGEN=2Ω.VGS=10V ID=25A --- 20.2 --- ns tr Rise Time --- 20.2 --- ns td(off) Turn-Off Delay Time --- 53.5 --- ns tf Fall Time --- 71.5 --- ns Qg Total Gate Charge --- 43.1 --- nC Qgs Gate-Source Charge VGS=10V, VDS=50V, --- 5.9 --- nC Qgd Gate-Drain “Miller” Charge ID=25A --- 11.6 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=12A --- --- 1.3 V Ls Diode Forward Current --- --- --- 70 A All d ata sheet.com