AP80P01NF APME | Alldatasheet

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-12V P-Channel Enhancement Mode MOSFET AP80P01NF RVE1.0 臺灣永源微電子科技有限公司

Description

The AP80P01NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -12V I D =-80A RDS(ON) < 4.5mΩ @ VGS=10V Application Load switch electronic cigarette Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP80P01NF PDFN5*6-8L AP80P01NF XXX YYYY 2500 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -12 V VGS Gate-Source Voltage ±12 V ID Drain Current – Continuous (TC=25℃) -80 A Drain Current – Continuous (TC=100℃) -54 A IDM Drain Current – Pulsed1 -240 A PD Power Dissipation (TC=25℃) 41.67 W Power Dissipation – Derate above 25℃ 0.33 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction to ambient 62 ℃/W RθJC Thermal Resistance Junction to Case 3 ℃/W

-12V P-Channel Enhancement Mode MOSFET AP80P01NF RVE1.0 臺灣永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -15 -17 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.008 --- V/℃ RDS(ON) Static Drain-Source On-Resistance mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.4 -0.6 -1.0 V △VGS VGS(th) Temperature Coefficient --- -3.44 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V ,VGS=0V ,TJ=125℃ --- --- -30 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±500 nA gfs Forward Transconductance VDS=-10V , IS=-3A --- 30 --- S Qg Total Gate Charge2 , 3 VDS=-16V , VGS=-4.5V , ID=- --- 149 225 nC Qgs Gate-Source Charge2 , 3 --- 14.4 22 Qgd Gate-Drain Charge2 , 3 --- 42.8 65 Td(on) Turn-On Delay Time2 , 3 VDD=-15V , VGS=-4.5V , RG=25 ID=-1A --- 21.2 42 nS Tr Rise Time2 , 3 --- 20.6 40 Td(off) Turn-Off Delay Time2 , 3 --- 26 52 Tf Fall Time2 , 3 --- 400 600 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 6800 Coss Output Capacitance --- 769 pF Crss Reverse Transfer Capacitance --- 726 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.6 --- Ω IS Contineous Source Current Vg=Vd=0V, Force Current -- -- -90 A ISM Pulsed Source Current -- -- -180 VSD Diode Forward Voltage Vgs=0V Is=1A Tj=25℃ -- -- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature.

-12V P-Channel Enhancement Mode MOSFET AP80P01NF RVE1.0 臺灣永源微電子科技有限公司 TC , Case Temperature (℃) TJ , Junction Temperature (℃) Fig.1 Continuous Drain Current vs. T C Fig.2 Normalized RDSON vs. T J Fig.3 Normalized V th vs. TJ Fig.4 Gate Charge Waveform Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) Fig.5 Normalized Transient Response Fig.6 Maximum Safe Operation Area Qg , Gate Charge (nC)T J , Junction Temperature ℃) Typical Characteristics

-12V P-Channel Enhancement Mode MOSFET AP80P01NF RVE1.0 臺灣永源微電子科技有限公司 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS=

2 L x IAS

Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform

-12V P-Channel Enhancement Mode MOSFET AP80P01NF RVE1.0 臺灣永源微電子科技有限公司 Symbol Common mm Inch Mim Max Min Max A 1.03 1.17 0.0406 0.0461 b 0.34 0.48 0.0134 0.0189 c 0.824 0.0970 0.0324 0.082 D 4.80 5.40 0.1890 0.2126 D1 4.11 4.31 0.1618 0.1697 D2 4.80 5.00 0.1890 0.1969 E 5.95 6.15 0.2343 0.2421 E1 5.65 5.85 0.2224 0.2303 E2 1.60 / 0.0630 / e 1.27 BSC 0.05 BSC L 0.05 0.25 0.0020 0.0098 L1 0.38 0.50 0.0150 0.0197 L2 0.38 0.50 0.0150 0.0197 H 3.30 3.50 0.1299 0.1378 I / 0.18 / 0.0070

-12V P-Channel Enhancement Mode MOSFET AP80P01NF RVE1.0 臺灣永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

-12V P-Channel Enhancement Mode MOSFET AP80P01NF RVE1.0 臺灣永源微電子科技有限公司 Edition Date Change Rve1.0 2020/10/22 Initial release Copyright Attribution“APM-Microelectronice”