AP70T15GP-HF

AP70T15GP-HF DOINGTER | Alldatasheet

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Technical content

www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=150V,ID=100A,RDS(ON)<15mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) G D S Symbol Parameter Ratings Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±25 V ID Continuous Drain Current- 100 AContinuous Drain Current-TC=100℃ 65 Pulsed Drain Current 300 EAS Single Pulse Avalanche Energy 272 mJ PD Power Dissipation 428 W TJ, TSTG Operating and Storage Junction Temperature Range -55-+150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case2 0.29 ℃/W RƟJA Thermal Resistance,Junction to Ambient 65 All d ata sheet.com

www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 150 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=150V,Tj=25℃ --- 0.05 1 μA VGS=0V, VDS=150V,Tj=150℃ --- --- 20 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- 10 100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 3 4 5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=50A --- 10 15 mΩ VGS=4.5V,ID=A --- 22 27 GFS Forward Transconductance VDS=25V, ID=30A --- 101 --- S Dynamic Characteristics Ciss Input Capacitance VDS=75V, VGS=0V, f=1MHz --- 3593 --- pFCoss Output Capacitance --- 331 --- Crss Reverse Transfer Capacitance --- 92 --- Switching Characteristics td(on) Turn-On Delay Time VDD=30V, ID=2A, RGEN=2.5 Ω.VGS=10V --- 18 --- ns tr Rise Time --- 93 --- ns td(off) Turn-Off Delay Time --- 34 --- ns tf Fall Time --- 70 --- ns Rg Gateresistance VGS=0V,VDS=0V, f=1MHz --- 1.7 --- Ω Qg Total Gate Charge VGS=10V, VDS=30V, ID=30A --- 69 --- nC Qgs Gate-Source Charge --- 24 --- nC Qgd Gate-Drain “Miller” Charge --- 26 --- nC All d ata sheet.com

www.doingter.cn — 3 — 10V 9.0V 8.0V 7.0 V VGS=6.0V VDS=5V 150°C 25°C V =10V I =50A 10V 9.0V 8.0V 7.0 V VGS=6.0V VDS=5V 150°C 25°C VGS=10V ID=50A 25°C ID (A)RDS(on) (mΩ) Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=50A --- 0.9 1.3 V Trr Reverse Recovery Time IF=50A,dI/dt=100A/ s µ --- 70 --- NS Qrr Reverse Recovery Charge --- 233 --- NC Typical Characteristics： (TC=25℃ unless otherwise noted) 350 280 210 140 Fig1:OutputCharacteristics 250 200 150 100 Fig2:TransferCharacteristics 0 0 0 2 4 6 8 10 3 VDS (V) 4 5 6 7 8 VGS (V) Fig3:Rds(on)vsDrainCurrentand GateVoltage 0 40 80 120 160 200 ID (A) Fig4:Rds(on)vsGateVoltage 5 6 7 8 9 10 VGS (V) VDS=5V 25°C 0°C15 10VVGS= ID=50A 25°C ID (A)RDS(on) (mΩ) 10V 9.0V 8.0V 7.0 V VGS=6.0V All d ata sheet.com

www.doingter.cn — 4 — -50 -25 0 25 50 75 100 125 150 0 30 60 90 120 150 VGS=10V ID=50A Ciss Coss CrssVGS=0V f=1MHz VDS=75V ID=50A 150˚C 25˚C VDS=75V ID=50A 150˚C 25˚C VGS≥10V VDS=75V ID=50A 2.5 Fig5:Rds(on)vs.Temperature Fig6:CapacitanceCharacteristics 100000 2.0 10000 1.5 1.0 0.5 1000 100 0.0 -50 -25 0 25 50 75 100 125 150 Tj - Junction Temperature (°C) 0 30 60 90 120 150 VDS (V) Fig7:GateChargeCharacteristics Fig8:Body-diodeForward Characteristics 10 1000 100 0 14 28 42 56 70 Qg (nC) VSD - Diode Forward Voltage(V) Fig9:PowerDissipation 450 400 350 300 250 200 150 100 Fig10:DrainCurrentDerating 140 120 100 0 25 50 75 100 125 150 Tc - Case Temperature (°C) 0 25 50 75 100 125 150 175 Tc - Case Temperature (°C) VGS=10V ID=50A VGS=0V f=1MHz ssCr ossC ssCi 150˚C C25˚ VGS≥10V RDS(on)_NormalizedVGS (V)Ptot (W) IS - Diode Current(A) - Capacitance (PF)ID (A) All d ata sheet.com

www.doingter.cn — 5 — 1us Limited by Rds(on) 10u 100 1ms 10m DC Single pulse Tc=25˚C D=0.5 0.2 0.1 0.05 0.02 0.01 Single pulse Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) Fig11:SafeOperatingArea 1000 100 0.1 0.1 1 10 VDS (V) 100 Fig12:Max.TransientThermalImpedance 0.1 0.01 0.001 1E-05 0.0001 0.001 tp (sec) 0.01 0.1 1 1us Limited by Rds(on) us s Single pulse Tc=25˚C DC 0m1 1ms 100 10us 0.2 Duty factor D=t1/t2 TJM-TC=PDM*ZthJC(t) eulsgle pSin 0.02 0.0 0.05 0.1 5D=0. ZthJC (˚C/W) ID (A) All d ata sheet.com

www.doingter.cn —— 6 est Circuit & Waveform All d ata sheet.com

www.doingter.cn —— 7 Package Outline: TO-220-3L 0086-0755-8278-9056 All d ata sheet.com