AP70T03GI DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=30V,ID=60A,RDS(ON)<9mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 60 AContinuous Drain Current-TC=100℃ 35 Pulsed Drain Current2 220 EAS Single Pulse Avalanche Energy3 45 mJ PD Power Dissipation4 40 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 3.1 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 62 G D S All d ata sheet.com

www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=30V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.6 2.5 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=16A --- 7.5 9 mΩ VGS=4.5V,ID=8A --- 13 GFS Forward Transconductance VDS=10V, ID=8A --- 14 --- S Dynamic Characteristics Ciss Input Capacitance --- 750 --- Coss Output Capacitance VDS=25V, VGS=0V, f=1MHz --- 150 --- pF Crss Reverse Transfer Capacitance --- 110 --- Switching Characteristics td(on) Turn-On Delay Time VDS=15V, ID=15A, RGEN=3.3 Ω --- 4.8 --- ns tr Rise Time --- 12.5 --- ns td(off) Turn-Off Delay Time --- 27.6 --- ns tf Fall Time --- 8.2 --- ns Qg Total Gate Charge --- 7.5 --- nC Qgs Gate-Source Charge VGS=4.5V, VDS=15V, --- 1.3 --- nC Qgd Gate-Drain “Miller” Charge ID=20A --- 4.5 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=1A --- --- 1 V All d ata sheet.com

www.doingter.cn — 3 — Ls Continuous Source Current VG=VD=0V, ForceCurrent --- 55 A lsm Pulsed Source Current --- 220 A Notes: 1. RepetitiveRating:Pulsedwidth limitedbymaximumjunctiontemperature. 2. V DD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25,StartingTJ=25℃. 3. Thedata testedbypulsed,pulsewidth ≦ 300us,dutycycle ≦ 2%. 4. Essentiallyindependentof operatingtemperature. Typical Characteristics： (TC=25℃ unless otherwise noted) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Gate Threshold Voltage (V) ID , Continuous Drain Current (A) Normalized On Resistance (m)VGS, Gate to Source Voltage (V) All d ata sheet.com

www.doingter.cn — 4 — Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area VDS EAS= 1 L x I 2 x BVDSS

2 AS BVDSS-VDD

Fig.7 Switching Time Waveform Fig.8 EAS Waveform 0086-0755-8278-9056 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff BVDSS IAS VGS Normalized Thermal Response (RΘJC) ID ,Continuous Drain Current (A) All d ata sheet.com