AP70N15PT APME | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 8
Technical content
150V N-Channel Enhancement Mode MOSFET AP70N15P/T RVE1.0 永源微電子科技有限公司
Description
The AP70N15P/T uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 150V ID =70A RDS(ON) < 28mΩ@ VGS=10V （Type：22mΩ） Application Automative lighting Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP70N15P TO-220-3L AP70N15P XXX YYYY 1000 AP70N15T TO-263-3L AP70N15T XXX YYYY 800 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Drain Current, VGS @ 10V 70 A ID@TC=100℃ Drain Current, VGS @ 10V 50 A IDM Pulsed Drain Current1 210 A EAS Single pulsed avalanche energy 210 mJ PD@TC=25℃ Total Power Dissipation 60 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Maximum Thermal Resistance, Junctionambient 62.5 ℃/W RθJC Maximum Thermal Resistance, Junction-case 1.25 ℃/W
150V N-Channel Enhancement Mode MOSFET AP70N15P/T RVE1.0 永源微電子科技有限公司 Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test condition Min. Typ. Max. Unit BVDSS Drain-source breakdown voltage VGS=0 V, ID=250 μA 150 167 V VGS(th) Gate threshold voltage VDS=VGS, ID=250 μA 2.0 3.0 4.0 V RDS(ON) Drain-source on-state resistance VGS=10 V, ID=30 A 22 28 mΩ IGSS Gate-source leakage current VGS=20 V 100 nA VGS=-20 V -100 IDSS Drain-source leakage current VDS=150 V, VGS=0 V 1 μA RG Gate resistance ƒ=1 MHz, Open drain 4 Ω Ciss Input capacitance VGS=0V, VDS=75V, ƒ=1MHz 1040 pF Coss Output capacitance 138 pF Crss Reverse transfer capacitance 8.2 pF td(on) Turn-on delay time VGS=10V, VDS=75 V, RG=2 Ω, ID=30 A 21.4 ns tr Rise time 35.4 ns td(off) Turn-off delay time 40 ns tf Fall time 12.2 ns Qg Total gate charge VGS=10V, VDS=75V, ID=30 A 15.2 nC Qgs Gate-source charge 5.4 nC Qgd Gate-drain charge 5.8 nC trr Reverse recovery time VR=50 V, IS=65A, di/dt=100 A/μs 68 ns Qrr Reverse recovery charge 95 nC Irrm Peak reverse recovery current 210 A VSD Diode forward voltage IS=30A, VGS=0 V 1.3 V Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=72V,VGS=10V,L=0.1mH,IAS=40A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.
150V N-Channel Enhancement Mode MOSFET AP70N15P/T RVE1.0 永源微電子科技有限公司 Typical Characteristics
150V N-Channel Enhancement Mode MOSFET AP70N15P/T RVE1.0 永源微電子科技有限公司
150V N-Channel Enhancement Mode MOSFET AP70N15P/T RVE1.0 永源微電子科技有限公司 Package Mechanical Data-TO-220-3L-SLK Symbol Common mm Mim Nom Max A 4.27 4.57 4.87 A1 1.15 1.30 1.45 A2 2.10 2.40 2.70 b 0.70 0.80 1.00 b2 1.17 1.27 1.50 D 0.40 0.50 0.65 D1 8.80 9.10 9.40 D2 5.70 6.70 7.00 E 9.70 10.00 10.30 E1 - 8.70 - E2 9.63 10.00 10.35 E3 7.00 8.00 8.40 e 0.37 e1 0.10 H1 6.00 6.50 6.85 L 12.75 13.50 13.90 L1 - 3.10 3.40 Φp 3.45 3.60 3.75 Q 2.60 2.80 3.00 θ1 4° 7° 10° θ2 0° 3° 6° F 13.30 13.50 13.70 F1 15.50 15.90 16.30 F2 2.80 3.00 3.20
150V N-Channel Enhancement Mode MOSFET AP70N15P/T RVE1.0 永源微電子科技有限公司 Package Mechanical Data-TO-263-3L-SLK Symbol Common mm Mim Nom Max A 4.35 4.47 4.60 A1 0.09 0.10 0.11 A2 2.30 2.40 2.70 b 0.70 0.80 1.00 b2 1.25 1.36 1.50 C 0.45 0.50 0.65 C1 1.29 1.30 9.40 D 9.10 9.20 9.30 D1 7.90 8.00 8.10 E 9.85 10.00 10.20 E1 7.90 8.00 8.10 H 15.30 15.50 15.70 e - 2.54 - L 2.34 2.54 2.74 L1 1.00 1.10 1.20 L2 1.30 1.40 1.50 R 0.24 0.25 0.26 θ 0° 4° 8° Θ1 4° 7° 10° Θ2 0° 3° 6°
150V N-Channel Enhancement Mode MOSFET AP70N15P/T RVE1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.
150V N-Channel Enhancement Mode MOSFET AP70N15P/T RVE1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2021/10/29 Initial release