AP622 WJCI | Alldatasheet

Document overview

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Technical content

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 4 March 2007 AP622 UMTS-band 4W HBT Amplifier Module Product Features 2.11 – 2.17 GHz

  • 28 dB Gain
  • -55 dBc ACLR @ +23 dBm Pavg
  • +35 dBm P1dB
  • +28 V Supply
  • Power Down Mode
  • RoHS-compliant flange-mount pkg

Applications

  • Repeaters Product Description The AP622 power amplifier module is a two-stage pow er amplifier module that operates over the frequency r ange of 2110 – 2170 MHz and is housed in a small, RoHS- compliant, flange-mount package. The multi-stage amplifier module has a 28 dB gain, P1dB of 35dBm, a nd ACLR of –55dBc at +23 dBm output power for WCDMA applications. The AP622 uses a +28V high reliability InGaP/GaAs H BT process technology and does not require any externa l matching components. The amplifier module operates off a +28V supply; an internal active bias allows the amp lifier to maintain high linearity over temperature. It has t he added feature of a +5V power down control pin. A low-cos t metal housing allows the device to have a low therm al resistance to ensure long lifetimes. All devices a re 100% RF and DC tested. The AP622 is targeted for use as a driver stage amp lifier in wireless infrastructure where high linearity and hi gh power is required. This combination makes the device an excellent candidate for next generation multi-carri er 3G base stations. Functional Diagram Top View Pin No. Function

1 RF Output

6 RF Input

W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 mA Parameter Units Min Typ Max Operational Bandwidth MHz 2110 - 2170 Output Channel Power dBm +23 Power Gain dB 28 ACLR dBc -55 Operating Current, Icc mA 135 Collector Efficiency % 5 Output P1dB dBm +35 Quiescent Current, Icq mA 120 Vpd V +5 Vcc V +28 Absolute Maximum Rating Parameter Rating Operating Case Temperature -40 to +85 °C Storage Temperature -55 to +150 °C Operation of this device above any of these parameters may cause permanent damage.

Ordering Information

Part No. Description AP622 PCS-band 4W HBT Amplifier Module 1 2 3 4 5 6

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 4 March 2007 AP622 UMTS-band 4W HBT Amplifier Module Evaluation Board Bias Procedure The following bias procedure is recommended to ensure proper functionality of AP622 in a laboratory environment. The sequencing is not required in the final system application. 28V 28 V GND 5V Turn-on Sequence: 1. Attach input and output loads onto the evaluation board. 2. Turn on power supply Vcc = +28V. 3. Turn on power supply Vpd = +5V. 4. Turn on RF power. Turn-off Sequence: 1. Turn off RF power. 2. Turn off power supply Vpd = +5V. 3. Turn off power supply Vcc = +28V. Notes: 1. Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier.

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 4 March 2007 AP622 UMTS-band 4W HBT Amplifier Module Performance Graphs W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 mA Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory envir onments. Details of the mounting holes used in the WJ heatsink are given on the last page of this datasheet. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing should be followed: a. Connect RF In and Out b. Connect the voltages and ground pins as shown in the circuit. c. Apply the RF signal d. Power down with the reverse sequence Gain vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C 22 23 24 25 26 27 Output Power (dBm) Gain (dB)

2110 MHz

2140 MHz

2170 MHz

ACLR1 vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C -60 -55 -50 -45 -40 22 23 24 25 26 27 Average Output Power (dBm) ACLR1 (dBc) Efficiency vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C 22 23 24 25 26 27 Average Output Power (dBm) Collector Efficiency (%) Icc vs. Output Power WCDMA, Vcc = 28V, Icq = 120 mA, 25 ˚C 120 130 140 150 160 170 22 23 24 25 26 27 Output Power (dBm) Icc (mA) DNP DNP DNP DNP 10 µ F DNP DNP DNP DNP 0Ω 0Ω 0Ω 0Ω 10 µ F .01 µ F .01 µ F 100pF 100pF +28V +28V GND +5V 6 5 4 2 3 1 RF IN RF OUT

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 4 March 2007 AP622 UMTS-band 4W HBT Amplifier Module Outline Drawing 2 3 4 5 61 AP622 Outline Drawing for the Heatsink with the WJ Evaluation Board