AP60N08DF APME | Alldatasheet

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85V N-Channel Enhancement Mode MOSFET AP60N08DF REV1.0 永源微電子科技有限公司

Description

The AP60N08DF uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 80V ID =60A RDS(ON) < 8.0mΩ VGS=10V （Type：6.8mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP60N08DF PDFN3X3-8L AP60N08DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 60 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 38 A IDM Pulsed Drain Current 200 A EAS Single Pulse Avalanche Energy 45 mJ PD@TC=25℃ Total Power Dissipation4 52 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 75 ℃/W RθJC Thermal Resistance Junction-Case 2.4 ℃/W

85V N-Channel Enhancement Mode MOSFET AP60N08DF REV1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS Drain-source breakdown voltage VGS=0V, ID=250uA 80 91 V VGS(th ) Gate threshold voltage VDS=VGS,ID=250uA Tj=25°C 2.0 3.0 4.0 V IDSS Zero gate voltage drain current VDS=80V,VGS=0V Tj=25°C - - 1 μA IDSS Zero gate voltage drain current VDS=80V,VGS=0V Tj=125°C - - - 5 μA IGSS Gate-source leakage current VGS=20V,VDS=0V - - 100 nA RDS(on) Drain-source on-state resistance VGS=10V, ID=20A, - 6.8 8.0 mΩ Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.0 --- Ω Ciss Input Capacitance VGS=0V, VDS=40V, f=1MHz - 1738 - pF Coss Output Capacitance - 317 - pF Crss Reverse Transfer Capacitance - 12 - pF QG Gate Total Charge VGS=10V, VDS=40V,ID=10A - 29 - nC Qgs Gate-Source charge - 7.7 - nC Qgd Gate-Drain charge - 5.3 - nC td(on) Turn-on delay time Tj=25°C, VGS=10V, VDS=40V, RL=3Ω - 6.2 - ns tr Rise time - 19 - ns td(off) Turn-off delay time - 9.4 - ns tf Fall time - 36 - ns RG Gate resistance VGS=0V, VDS=0V, f=1MHz - 2 - Ω VSD Body Diode Forward Voltage VGS=0V,ISD=10A - 0.85 1.2 V trr Body Diode Reverse Recovery Time IF=10A , dI/dt=100A/µs , TJ=25℃ - 35 - ns Qrr Body Diode Reverse Recovery Charge - 62 - nC Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3、The test cond≦ 300us duty cycle ≦ 2%, duty cycle ition is VDD=64VGS=10V,L=0.1mH,IAS=53.8A 4、The power dissipation is limited by 175℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

85V N-Channel Enhancement Mode MOSFET AP60N08DF REV1.0 永源微電子科技有限公司 Typical Characteristics

85V N-Channel Enhancement Mode MOSFET AP60N08DF REV1.0 永源微電子科技有限公司

85V N-Channel Enhancement Mode MOSFET AP60N08DF REV1.0 永源微電子科技有限公司 Symbol Dim in mm Min Typ Max A 0.6 0.75 0.9 b 0.2 0.3 0.4 C 0.15 0.2 0.25 D 3 3.1 3.2 D1 2.3 2.45 2.6 E 3.15 3.3 3.45 E1 1.43 1.73 1.93 E2 2.9 3.05 3.2 e 0.65BSC H 0.2 0.35 0.5 K 0.57 0.77 0.87 L 0.3 0.4 0.5 L1/L2 0.1REF θ 8° 10° 13° N 0 0.15

85V N-Channel Enhancement Mode MOSFET AP60N08DF REV1.0 永源微電子科技有限公司

85V N-Channel Enhancement Mode MOSFET AP60N08DF REV1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change REV1.0 2023/12/31 Initial release