AP602-PCB900

AP602 WJCI | Alldatasheet

Document overview

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Technical content

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 1 of 11 May 2007 ver 1 AP602 High Dynamic Range 4W 28V HBT Amplifier Product Features

• 800 – 2400 MHz
• +35.7 dBm P1dB
• -52 dBc ACLR @ ½W PAVG
• -47 dBc IMD3 @ ½W PEP
• 16% Efficiency @ ½W PAVG
• Internal Active Bias
• Internal Temp Compensation
• Capable of handling 7:1 VSWR @ 28 Vcc, 2.14 GHz, 3W CW Pout
• Lead-free/RoHS-compliant 5x6 mm power DFN package

Applications

• Mobile Infrastructure HPA
• WiBro HPA Product Description The AP602 is a high dynamic range power amplifier in a lead-free/RoHS-compliant 5x6mm power DFN SMT package. The single stage amplifier has excellent backoff linearity, while being able to achieve high performance for 800-2400 MHz applications with up to +35.7 dBm of compressed 1dB power. The AP602 uses a high reliability, high voltage InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. The module does not require any negative bias voltage; an internal active bias allows the AP602 to operate directly off a commonly used high voltage supply (typically +24 to +32V). An added feature allows the quiescent bias to be adjusted externally to meet specific system requirements. The AP602 is targeted for use as a pre-driver and driver stage amplifier in wireless infrastructure where high linearity and high efficiency is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G mobile infrastructure. Functional Diagram ACLR1 vs. Output Power vs. Vcc WCDMA, Icq = 80 mA, 2140 MHz, 25 ˚C -65 -60 -55 -50 -45 -40 19 21 23 25 27 29 Average Output Power (dBm) ACLR1 (dBc) 26 V 28 V 30 V 32 V Specifications W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA Parameter Units Min Typ Max Operational Bandwidth MHz 800 2200 Test Frequency MHz 2140 Output Channel Power dBm +27 Power Gain dB 13 Input Return Loss dB 9 Output Return Loss dB 9 ACLR dBc -52 IMD3 @ +27 dBm PEP dBc -47 PIN_VPD Current, Ipd mA 2 Operating Current, Icc mA 112 Collector Efficiency % 15.7 Output P1dB dBm +35.7 Quiescent Current, Icq mA 80 Vpd, Vbias V +5 Vcc V +28 Absolute Maximum Rating Parameter Rating Storage Temperature, Tstg -55 to +125 ºC Junction Temperature, TJ For 106 hours MTTF 192 ºC RF Input Power (CW tone), Pin Input P6dB Breakdown Voltage C-B, BVCBO 80 V @ 0.1 mA Breakdown Voltage C-E, BVCEO 51 V @ 0.1 mA Quiescent Bias Current, ICQ 160 mA Power Dissipation, PDISS 4.7 W Operation of this device above any of these parameters may cause permanent damage. Typical Performance W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA Parameter Units Typical Test Frequency MHz 940 1960 2140 Channel Power dBm +27 +27 +27 Power Gain dB 15.5 14.2 13 Input Return Loss dB 11 12 9 Output Return Loss dB 6.4 9 9 ACLR dBc -50 -50 -52 IMD3 @ +27 dBm PEP dBc -62 -51 -47 Operating Current, Icc mA 103 103 112 Collector Efficiency % 17 17 15.7 Output P1dB dBm +35.7 +35.5 +35.7 Quiescent Current, Icq mA 80 Vpd, Vbias V +5 Vcc V +28 Notes: 1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR performance at +25° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 80 mA to achieve the best tradeoff in term s of efficiency and linearity. Increasing Icq will improve upon the device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More information is given in the other parts of this datasheet. 2. The AP602 evaluation board has been tested for ruggedness to be capable of handling: 7:1 VSWR @ +28 Vcc, 2140 MHz, 3W CW Pout, 5:1 VSWR @ +30 Vcc, 2140 MHz, 3W CW Pout, 3:1 VSWR @ +32 Vcc, 2140 MHz, 3W CW Pout.

Ordering Information

Part No. Description AP602-F High Dynamic Range 28V 4W HBT Amplifier AP602-PCB900 869-960 MHz Evaluation board AP602-PCB1960 1930-1990 MHz Evaluation board AP602-PCB2140 2110-2170 MHz Evaluation board

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 2 of 11 May 2007 ver 1 AP602 High Dynamic Range 4W 28V HBT Amplifier Typical Device Data S-Parameters (VCC = +28 V, VPD = VBIAS = 5 V, ICQ = 80 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads) 0 0.5 1 1.5 2 2.5 Frequency (GHz) Gain / Maximum Stable Gain -10 Gain (dB) DB(|S(2,1)|) DB(GMax()) 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S11 Swp Max 3GHz Swp Min 0.01GHz 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S22 Swp Max 3GHz Swp Min 0.01GHz The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments. Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) Device S-parameters are available for download off of the website at: http://www.wj.com

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 3 of 11 May 2007 ver 1 AP602 High Dynamic Range 4W 28V HBT Amplifier Application Circuit PC Board Layout PCB Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz Cu, εr = 2.45, Microstrip line details: width = .042”, spacing = .050” Baseplate Configuration Notes: 1. Please note that for reliable operation, the evalua tion board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing is recommended. Evaluation Board Bias Procedure Following bias procedure is recommended to ensure proper functionality of AP602 in a laboratory environment. The sequencing is not required in the final system application. Bias. Voltage (V) Vcc +28 Vbias +5 Vpd +5 Turn-on Sequence: 1. Attach input and output lo ads onto the evaluation board. 2. Turn on power supply Vcc = +28V. 3. Turn on power supply Vbias = +5V. At this point, the onl y current drawn by the device is leakage current (< 25µA). 4. Turn on power supply Vpd = +5V. Power supply Vcc should now be drawing typical Icq = 80 mA. 5. Turn on RF power. Turn-off Sequence: 1. Turn off RF power. 2. Turn off power supply Vpd = +5V. 3. Turn off power supply Vbias = +5V. 4. Turn off power supply Vcc = +28V. Notes: 1. Icq can be adjusted with the resistor R2 from the Vpd (+5V ) supply and the PIN_VPD (pin14) of the amplifier. Increasing R2 results in a lower Icq. Icq should not be increased above 160mA. 2. Vpd is used as a reference for the internal active bias circui try. It can be used to turn on/off the amplifier. Ipd depends on the Icq quiescent current setting. Ipd can be up to 4mA at a quiescent current setting of 160mA. 3. Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level. It can be up to 4mA on the AP602. Ipd vs Icq 0 40 80 120 160 200 Icq Setting (mA) Ipd (mA) Ibias vs Output Power 22 24 26 28 30 32 Output Average Power (dBm) Ibias (mA)

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 4 of 11 May 2007 ver 1 AP602 High Dynamic Range 4W 28V HBT Amplifier Typical WCDMA Performance at 25 °C at a channel power of +27 dBm Frequency 940 MHz W-CDMA Channel Power +27 dBm Power Gain 15.5 dB Input Return Loss 11 dB Output Return Loss 6.4 dB ACLR -50 dBc IMD3 @ +27 dBm PEP -50 dBc Operating Current, Icc 103 mA Collector Efficiency 17 % Output P1dB +35.7 dBm Quiescent Current, Icq 80 mA Vpd, Vbias +5 V Vcc +28 V Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. C20 is not required in the final design if there is no DC signal present at the output of the amplifier circuit. 4. The center of C24 is placed at 0.280” (11.5° @ 940 MHz) from the edge of the AP602 (U1). 5. The center of L10 is placed at 0.570” (23.4° @ 940 MHz) from the edge of the AP602 (U1). 6. The center of C19 is placed at 0.050” (2.1° @ 940 MHz) the center of L10. 7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ. 8. The main RF trace is cut at component L3 and L4 for this particular reference design. 869-960 MHz Application Circuit Performance Plots Gain vs. Frequency Vcc = 28V, Icq = 80 mA, 25 ˚C Frequency (GHz) Gain (dB) S11, S22 vs. Frequency Vcc = 28V, Icq = 80 mA, 25 ˚C -25 -20 -15 -10 Frequency (GHz) S11, S22 (dB) S11 S22 Efficiency vs. Output Power vs. Frequency CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C 18 22 26 30 34 Output Power (dBm) Collector Efficiency (%)

920 MHz

940 MHz

960 MHz

ACLR1 vs. Output Power vs. Frequency WCDMA, Vcc= 28V, Icq = 40mA, 25oC -62 -58 -54 -50 -46 -42 18 20 22 24 26 28 Output Power (dBm) ACLR1 (dBc) 869MHz 880MHz 894MHz 920MHz 940MHz 960MHz WCDMA 3GPP TM 1+64 DPCH; PAR = 8.6 @0.01% 60% clipping, Ch. BW = 3.84 MHz; IMD vs. Output Power CW 2-tone signal, 940 MHz, ∆f = 1 MHz, 28V, 80 mA Icq, 25 ˚C -80 -70 -60 -50 -40 22 24 26 28 30 32 Output Power, PEP (dBm) IMD (dBc) IMD3L IMD3U IMD5 Efficiency vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C 18 20 22 24 26 28 Average Output Power (dBm) Collector Efficiency (%) Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com VBIAS VPD GND VCC See note 4

2 Ohm

W = .030” L = 1.570” C15 100pF C30 100pF L10 8.2 nH See note 5 C19 0.4 pF See note 6

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 5 of 11 May 2007 ver 1 AP602 High Dynamic Range 4W 28V HBT Amplifier 1930-1990 MHz Application Circuit (AP602-PCB1960) Typical WCDMA Performance at 25 °C at a channel power of +27 dBm Frequency 1960 MHz W-CDMA Channel Power +27 dBm Power Gain 14.2 dB Input Return Loss 12 dB Output Return Loss 9 dB ACLR -50 dBc IMD3 @ +27 dBm PEP -51 dBc Operating Current, Icc 103 mA Collector Efficiency 17 % Output P1dB +35.5 dBm Quiescent Current, Icq 80 mA Vpd, Vbias +5 V Vcc +28 V Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of L3 is placed at 0.095” (8.1° @ 1960 MHz) from the center C2. 4. The center of C2 is placed at 0.135” (11.5° @ 1960 MHz) from the edge of the AP602 (U1). 5. The center of C30 is placed at 0.580” (49.6° @ 1960 MHz) from the edge of the AP602 (U1). 6. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ. 7. The main RF trace is cut at component lo cation L3 for this particular reference design. 1930-1990 MHz Application Circuit Performance Plots W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW Gain vs. Output Power vs. Frequency CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C 26 28 30 32 34 36 Output Power (dBm) Gain (dB)

1930 MHz

1960 MHz

1990 MHz

S11, S22 vs. Frequency Vcc = 28V, Icq = 80 mA, 25 ˚C -25 -20 -15 -10 Frequency (GHz) S11, S22 (dB) S11 S22 Efficiency vs. Output Power vs. Frequency CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C 16 20 24 28 32 36 Output Power (dBm) Collector Efficiency (%) ACLR1 vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C -65 -60 -55 -50 -45 -40 18 20 22 24 26 28 Average Output Power (dBm) ACLR1 (dBc) IMD vs. Output Power CW 2-tone signal, 1960 MHz, ∆f = 1 MHz, 28V, 80 mA Icq, 25 ˚C -80 -70 -60 -50 -40 22 24 26 28 30 32 Output Power, PEP (dBm) IMD (dBc) IMD3L IMD3U IMD5 Efficiency vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C 18 20 22 24 26 28 Average Output Power (dBm) Collector Efficiency (%) 2.4pF See note 5 2.7pF See note 4 VBIAS VPD GND VCC 4.7 nH See note 3 1000pF W = .030” L = .980” C27 10pF C30

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 6 of 11 May 2007 ver 1 AP602 High Dynamic Range 4W 28V HBT Amplifier 2010-2025 MHz Application Circuit Typical Performance at 25 °C at an output power of +27 dBm Frequency 2015 MHz Total Output Power +27 dBm Power Gain 13.7 dB Input Return Loss 12 dB Output Return Loss 8.5 dB IMD3 @ +27 dBm PEP -44 dBc Operating Current, Icc 110 mA Collector Efficiency 16.5 % Output P1dB +36 dBm Quiescent Current, Icq 80 mA Vpd, Vbias +5 V Vcc +28 V Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of L3 is placed at 0.095” (8.3 ° @ 2015 MHz) from the center of C2. 4. The center of C2 is placed at 0.135” (11.8 ° @ 2015 MHz) from the edge of the AP602 (U1). 5. The center of C30 is placed at 0.530” (50.9° @ 2015 MHz) from the edge of the AP602 (U1). 6. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ. 7. The main RF trace is cut at component location L3 for this particular reference design. 2010-2025 MHz Application Circuit Performance Plots Gain vs. Output Power vs. Temperature CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz 28 30 32 34 36 38 Output Power (dBm) Gain (dB) -40 ˚C 25 ˚C 85 ˚C S11, S22 vs. Frequency Vcc = 28V, Icq = 80 mA, 25 ˚C -25 -20 -15 -10 Frequency (GHz) S11, S22 (dB) S11 S22 Efficiency vs. Output Power vs. Temperature CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz 20 24 28 32 36 Output Power (dBm) Collector Efficiency (%) -40 ˚C 25 ˚C 85 ˚C ACLR vs. Output Power vs. Icq 3-carrier TDSCDMA, Vcc = 28V, 2015MHz -56 -52 -48 -44 -40 16 18 20 22 24 26 Average Output Power (dBm) ACLR (dBc) Icq = 80mA Icq=100mA 3C-TDSCDMA, PAR = 9.6 dB @0.01% prob, BW = 1.28MHz, Sample clk = 32 MHz IQ Mod Filter = 2.1 MHz Efficiency vs. Output Power 3-carrier TDSCDMA, Vcc = 28V, Icq = 140 mA, 2020 MHz 16 18 20 22 24 26 Average Output Power (dBm) Collector Efficiency (%) IMD vs. Output Power CW 2-tone signal, 2015 MHz, ∆f = 1 MHz, 28V, 80 mA Icq, 25 ˚C -80 -70 -60 -50 -40 22 24 26 28 30 32 Output Power, PEP (dBm) IMD (dBc) IMD3L IMD3U IMD5 Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com 1000pF C30 2.4pF See note 5 2.7pF See note 4 VBIAS VPD GND VCC 4.7 nH See note 3 100pF W = .030” L = .980” C27 10pF 1000pF

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 7 of 11 May 2007 ver 1 AP602 High Dynamic Range 4W 28V HBT Amplifier 2110-2170 MHz Application Circuit (AP602-PCB2140) Typical WCDMA Performance at 25 °C at a channel power of +27 dBm Frequency 2140 MHz W-CDMA Channel Power +27 dBm Power Gain 13 dB Input Return Loss 9 dB Output Return Loss 9 dB ACLR -52 dBc IMD3 @ +27 dBm PEP -47 dBc Operating Current, Icc 112 mA Collector Efficiency 15.7 % Output P1dB +35.7 dBm Quiescent Current, Icq 80 mA Vpd, Vbias +5 V Vcc +28 V Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 3. The center of C22 is placed at 0.185” (17.3 ° @ 2140 MHz) from the center of C1. 4. The center of C1 is placed at 0.910” (84.9 ° @ 2140 MHz) from the center of C3. 5. The center of C3 is placed at 0.035” (3.26 ° @ 2140 MHz) from the edge of the AP602 (U1). 6. The center of C6 is placed at 0.510” (47.6 ° @ 2140 MHz) from the edge of the AP602 (U1). 7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ. 2110-2170 MHz Application Circuit Performance Plots W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW Gain vs. Output Power vs. Frequency CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C 20 24 28 32 36 Output Power (dBm) Gain (dB)

2110 MHz

2140 MHz

2170 MHz

S11, S22 vs. Frequency Vcc = 28V, Icq = 80 mA, 25 ˚C -25 -20 -15 -10 Frequency (GHz) S11, S22 (dB) S11 S22 Efficiency vs. Output Power vs. Frequency CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C 20 24 28 32 36 Output Power (dBm) Collector Efficiency (%) ACLR1 vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C -65 -60 -55 -50 -45 -40 19 21 23 25 27 29 Average Output Power (dBm) ACLR1 (dBc) Icc vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C 100 110 120 130 140 19 21 23 25 27 29 Average Output Power (dBm) Collector Current (mA) Efficiency vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C 19 21 23 25 27 29 Average Output Power (dBm) Collector Efficiency (%) 0.5 pF See note 3 See note 4 See note 5 VBIAS VPD GND VCC 1000pF W = .030” L = .980”

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 8 of 11 May 2007 ver 1 AP602 High Dynamic Range 4W 28V HBT Amplifier 2110-2170 MHz Application Circuit Performance Plots W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW Gain vs. Output Power vs. Temperature CW tone, Vcc = 28V, Icq = 80 mA, 2140 MHz 20 24 28 32 36 Output Power (dBm) Gain (dB)-40 ˚C 25 ˚C 85 ˚C Icc vs. Output Power vs. Temperature CW tone, Vcc = 28V, Icq = 80 mA, 2140 MHz 100 150 200 250 300 20 24 28 32 36 Output Power (dBm) Collector Current (mA) -40 ˚C 25 ˚C 85 ˚C Efficiency vs. Output Power vs. Temperature CW tone, Vcc = 28V, Icq = 80 mA, 2140 MHz 20 24 28 32 36 Output Power (dBm) Collector Efficiency (%) -40 ˚C 25 ˚C 85 ˚C ACLR1 vs. Output Power vs. Temperature WCDMA, Vcc = 28V, Icq = 80 mA, 2140 MHz -60 -55 -50 -45 -40 -35 19 21 23 25 27 29 Average Output Power (dBm) ACLR1 (dBc) -40 ˚C 25 ˚C 85 ˚C Icc vs. Output Power vs. Temperature WCDMA, Vcc = 28V, Icq = 80 mA, 2140 MHz 100 110 120 130 19 21 23 25 27 29 Average Output Power (dBm) Collector Current (mA) -40 ˚C 25 ˚C 85 ˚C Efficiency vs. Output Power vs. Temperature WCDMA, Vcc = 28V, Icq = 80 mA, 2140 MHz 19 21 23 25 27 29 Average Output Power (dBm) Collector Efficiency (%) -40 ˚C 25 ˚C 85 ˚C Gain vs. Frequency vs. Temperature WCDMA, Vcc = 28V, Icq = 80 mA, +27 dBm Pout 2110 2130 2150 2170 Frequency (MHz) Gain (dB) -40 ˚C 25 ˚C 85 ˚C ACLR1 vs. Output Power vs. Vcc WCDMA, Icq = 80 mA, 2140 MHz, 25 ˚C -65 -60 -55 -50 -45 -40 19 21 23 25 27 29 Average Output Power (dBm) ACLR1 (dBc) 26 V 28 V 30 V 32 V Efficiency vs. Output Power vs. Vcc WCDMA, Icq = 80 mA, 2140 MHz, 25 ˚C 19 21 23 25 27 29 Average Output Power (dBm) Collector Efficiency (%) 26 V 28 V 30 V 32 V Gain vs. Output Power vs. Vcc CW tone, Icq = 80 mA, 2140 MHz, 25 ˚C 20 24 28 32 36 Output Power (dBm) Gain (dB)26 V 28 V 30 V 32 V Efficiency vs. Output Power vs. Vcc CW tone, Icq = 80 mA, 2140 MHz, 25 ˚C 20 24 28 32 36 Output Power (dBm) Collector Efficiency (%) 26 V 28 V 30 V 32 V OIP3 vs. Output Power vs. Vcc CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 80 mA, 25 ˚C 24 26 28 30 32 34 Output Power, PEP (dBm) OIP3 (dBm) 26 V 28 V 30 V 32 V IMD3 vs. Output Power vs. Vcc CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 80 mA, 25 ˚C -65 -60 -55 -50 -45 -40 24 26 28 30 32 34 Output Power, PEP (dBm) IMD3 (dBc) 26 V 28 V 30 V 32 V IMD5 vs. Output Power vs. Vcc CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 80 mA, 25 ˚C -70 -65 -60 -55 -50 -45 24 26 28 30 32 34 Output Power, PEP (dBm) IMD5 (dBc) 26 V 28 V 30 V 32 V

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 9 of 11 May 2007 ver 1 AP602 High Dynamic Range 4W 28V HBT Amplifier 2110-2170 MHz Application Note: Changing Icq Biasing Configurations The AP602 can be configured to operate with lower bias current by varying the bias-adjust resistor – R2. The recommended circuit configurations shown previously in this datasheet have the device operating with a 80 mA as the quiescent current (ICQ). This biasing level represents th e best tradeoff in terms of linearity and efficiency. Lowering I CQ will improve upon the efficiency of the device, but de graded linearity. Increasing I CQ has nominal improvement upon the linearity, but will degrade the device’s efficiency. Measured data shown in the plots below represents the AP602 measured and configured for 2.14 GHz applications. It is expected that variation of the bias cu rrent for other frequency applications will produce similar performa nce results. Icq (mA) (ohms) VPD (V) PIN_VPD (V) 20 6.00k 5 2.53 40 2.76k 5 2.61 60 1.80k 5 2.67 80 1.33k 5 2.73 100 1.05k 5 2.79 120 859 5 2.84 140 723 5 2.89 160 621 5 2.94 Thermal Rise vs. Output Power vs. Icq Vcc = 28V 17 19 21 23 25 27 29 Output Power (dBm) Thermal Rise (˚C) 20 mA 40 mA 60 mA 80 mA 100 mA 120 mA 140 mA 160 mA See note 6 C22 0.5 pF See note 5 See note 4 See note 3 VBIAS VPD GND VCC 100pF W = .030” L = .980” ACLR1 vs. Output Power vs. Icq WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C -65 -60 -55 -50 -45 -40 -35 19 21 23 25 27 29 Average Output Power (dBm) ACLR1 (dBc) 20 mA 40 mA 60 mA 80 mA 100 mA 120 mA 140 mA 160 mA Icc vs. Output Power vs. Icq WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C 100 150 200 19 21 23 25 27 29 Average Output Power (dBm) Collector Current (mA)20 mA 40 mA 60 mA 80 mA 100 mA 120 mA 140 mA 160 mA Efficiency vs. Output Power vs. Icq WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C 19 21 23 25 27 29 Average Output Power (dBm) Collector Efficiency (%) 20 mA 40 mA 60 mA 80 mA 100 mA 120 mA 140 mA 160 mA Gain vs. Output Power vs. Icq CW tone, Vcc = 28V, 2140 MHz, 25 ˚C 20 24 28 32 36 Output Power (dBm) Gain (dB) 20 mA 40 mA 60 mA 80 mA 100 mA 120 mA 140 mA 160 mA Output Power vs. Input Power vs. Icq CW tone, Vcc = 28V, 2140 MHz, 25 ˚C 8 1 21 62 02 4 Input Power (dBm) Output Power (dBm) 20 mA 40 mA 60 mA 80 mA 100 mA 120 mA 140 mA 160 mA Efficiency vs. Output Power vs. Icq CW tone, Vcc = 28V, 2140 MHz, 25 ˚C 20 24 28 32 36 Output Power (dBm) Collector Efficiency (%) 20 mA 40 mA 60 mA 80 mA 100 mA 120 mA 140 mA 160 mA OIP3 vs. Output Power vs. Icq CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C 24 26 28 30 32 34 Output Power, PEP (dBm) OIP3 (dBm) 20 mA 40 mA 60 mA 80 mA 100 mA 120 mA 140 mA 160 mA IMD3 vs. Output Power vs. Icq CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C -80 -70 -60 -50 -40 -30 24 26 28 30 32 34 Output Power, PEP (dBm) IMD3 (dBc) 20 mA 40 mA 60 mA 80 mA 100 mA 120 mA 140 mA 160 mA IMD5 vs. Output Power vs. Icq CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C -80 -70 -60 -50 -40 -30 24 26 28 30 32 34 Output Power, PEP (dBm) IMD5 (dBc) 20 mA 40 mA 60 mA 80 mA 100 mA 120 mA 140 mA 160 mA 1000 pF

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 10 of 11 May 2007 ver 1 AP602 High Dynamic Range 4W 28V HBT Amplifier 2320-2380 MHz WiBro Application Circuit Typical WCDMA Performance at 25 °C at an output power of +27 dBm Frequency 2350 MHz Total Output Power +27 dBm Power Gain 13 dB ACLR -49 dBc Operating Current, Icc 110 mA Collector Efficiency 15.8 % Output P1dB +36 dBm Quiescent Current, Icq 80 mA Vpd, Vbias +5 V Vcc +28 V Notes: 1. The primary RF microstrip line is 50 Ω. 2. Components shown on the silkscreen but not on the schematic are not used. 8. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ. 2320-2380 MHz Application Circuit Performance Plots W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW Gain vs. Output Power vs. Frequency CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C 20 24 28 32 36 Output Power (dBm) Gain (dB)

2320 MHz

2350 MHz

2380 MHz

Efficiency vs. Output Power vs. Frequency CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C 20 24 28 32 36 Output Power (dBm) Collector Efficiency (%) ACLR1 vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C -65 -60 -55 -50 -45 -40 19 21 23 25 27 29 Average Output Power (dBm) ACLR1 (dBc) Icc vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C 100 110 120 130 140 19 21 23 25 27 29 Average Output Power (dBm) Collector Current (mA) Efficiency vs. Output Power vs. Frequency WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C 19 21 23 25 27 29 Average Output Power (dBm) Collector Efficiency (%) 0.2pF See note 4 C29 0.8pF See note 5 C30 1.1pF See note 6 C31 1.2pF See note 7 C21 22pF C28 C29 C31 C30 22pF W = .030” L = .590”

Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com Page 11 of 11 May 2007 ver 1 AP602 High Dynamic Range 4W 28V HBT Amplifier AP602-F Mechanical Information This package is lead-free and RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. Outline Drawing Mounting Configuration / Land Pattern Thermal Specifications Parameter Rating Thermal Resistance, ΘJC Referenced from peak junction to the center of the bottomside ground paddle 16.6 °C / W Junction Temperature, TJ For 106 hours MTTF 192 ºC Max Junction Temperature, TJ,max For catastrophic failure 250 ºC Product Marking The component will be laser marked with an “AP602-F” product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the “Application Notes” section. Functional Pin Layout Pin Function

1 PIN_VBIAS

4, 5, 6 RF IN 9, 10, 11 RF Output / Vcc

14 PIN_VPD

ESD Rating: Class 1B Value: Passes 500V to <1000V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes 1000V to <2000V Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 MTTF vs. Junction Temperature 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 120 140 160 180 200 Junction Temperature (°C) MTTF (hours)