AP5G03DF

AP5G03DF APME | Alldatasheet

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30V N+P-Channel Enhancement Mode MOSFET AP5G03DF RVE1.1 永源微電子科技有限公司

Description

The AP5G03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =8.2A RDS(ON) < 25mΩ @ VGS=10V （Type：18mΩ） VDS = -30V ID =-7.5A RDS(ON) < 48mΩ @ VGS=-10V（Type：38mΩ） Application BLDC Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP5G03DF PDFN3*3-8L AP5G03DF XXX YYYY 5000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage 30 -30 V VGS Gate-Source Voltage ±20 ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 8.2 7.5 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 5.1 -4.2 A IDM Pulsed Drain Current2 25 -24 A EAS Single Pulse Avalanche Energy3 22 22 mJ IAS Avalanche Current 21 11 A PD@TA=25℃ Total Power Dissipation4 18 18 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 85 ℃/W RθJC Thermal Resistance Junction-Case1 60 ℃/W

30V N+P-Channel Enhancement Mode MOSFET AP5G03DF RVE1.1 永源微電子科技有限公司 N-Channel Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 35 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.023 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=5A --- 18 25 mΩ VGS=4.5V , ID=3A --- 24 40 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.2 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=6A --- 5.8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.3 --- Ω Qg Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=6A --- 5 --- nC Qgs Gate-Source Charge --- 1.11 --- Qgd Gate-Drain Charge --- 2.61 --- Td(on) Turn-On Delay Time VDD=12V , VGS=10V , RG=3.3Ω ID=6A --- 7.7 --- ns Tr Rise Time --- 46 --- Td(off) Turn-Off Delay Time --- 11 --- Tf Fall Time --- 3.6 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 416 --- pF Coss Output Capacitance --- 62 --- Crss Reverse Transfer Capacitance --- 51 --- IS Continuous Source Current1,6 VG=VD=0V , Force Current --- --- 6.2 A ISM Pulsed Source Current2,6 --- --- 24 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=24V,VGS=10V,L=0.1mH,IAS=21A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

30V N+P-Channel Enhancement Mode MOSFET AP5G03DF RVE1.1 永源微電子科技有限公司 P-Channel Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 -35 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.02 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-4.1A --- 38 48 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.7 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4.32 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-24V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=-5V , ID=-3A --- 4.7 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 24 --- Ω Qg Total Gate Charge (-4.5V) VDS=-20V , VGS=-4.5V , ID=-5A --- 5.22 --- nC Qgs Gate-Source Charge --- 1.25 --- Qgd Gate-Drain Charge --- 2.3 --- Td(on) Turn-On Delay Time VDD=-15V, VGS=-10V , RG=3.3Ω ID=-1A --- 18.4 --- ns Tr Rise Time --- 11.4 --- Td(off) Turn-Off Delay Time --- 39.4 --- Tf Fall Time --- 5.2 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 463 --- pF Coss Output Capacitance --- 82 --- Crss Reverse Transfer Capacitance --- 68 --- IS Continuous Source Current1,6 VG=VD=0V , Force Current --- --- -4 A ISM Pulsed Source Current2,6 --- --- -24 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1、The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=-24V,VGS=-10V,L=0.1mH,IAS=-11A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

30V N+P-Channel Enhancement Mode MOSFET AP5G03DF RVE1.1 永源微電子科技有限公司 N-Channel Typical Characteristics -50 0 50 100 150 - 5 0 0 50 100 150 TJ ,Junction Temperature (℃ ) TJ , Junction Temper℃) Fig. Normalized V GS(th) vs. T J Fig. Normalized R DSON vs. T J

30V N+P-Channel Enhancement Mode MOSFET AP5G03DF RVE1.1 永源微電子科技有限公司 T d on T r T on T d off T f T off V DS V GS I AS V GS BV DSS V DD EAS L x I AS x BV DSS BV DSS V DD Fig. Normalized Maximum Transient Thermal Impedance Fig. Switching Time Waveform Fig. Unc lamped Inductive Switching Waveform

30V N+P-Channel Enhancement Mode MOSFET AP5G03DF RVE1.1 永源微電子科技有限公司 P-Channel Typical Characteristics -VSD , Source-to-Drain Voltage (V) QG , Total Gate Charge (nC 0.5 1.5 -50 100 150 T J ,Junction Temperature ( 0.5 1.0 1.5 2.0 -50 100 150 T J , Junction Temperature ( Fig. Forward C haracteristics of R ever se Fig. Gate C harge C haracteristics Fig. Normalized V GS(th) vs. T J Fig. Normalized R DSON vs. T J

30V N+P-Channel Enhancement Mode MOSFET AP5G03DF RVE1.1 永源微電子科技有限公司 Fig. Normalized Maximum Transient Thermal Impedance Fig. Switching Time Waveform Fig. Unclamped Inductive Switching Waveform

30V N+P-Channel Enhancement Mode MOSFET AP5G03DF RVE1.1 永源微電子科技有限公司 Symbol Common Mm Min Nom Max A 0.70 0.75 0.85 A1 / / 0.05 b 0.25 0.30 0.39 c 0.14 0.152 0.20 D 3.20 3.30 3.45 D1 3.05 3.15 3.25 D2 0.84 1.04 1.24 D3 2.30 2.45 2.60 E 3.20 3.30 3.40 E1 2.95 3.05 3.15 E2 1.60 1.74 1.90 E3 0.28 0.48 0.65 E4 0.37 0.57 0.77 E5 0.10 0.20 0.30 e 0.60 0.65 0.70 K 0.50 0.69 0.80 K1 0.30 0.38 0.53 K2 0.15 0.25 0.35 L 0.30 0.40 0.50 L1 0.06 0.125 0.20 L2 0.27 0.42 0.57 t 0 0.075 0.13 Φ 10° 12° 14°

30V N+P-Channel Enhancement Mode MOSFET AP5G03DF RVE1.1 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

30V N+P-Channel Enhancement Mode MOSFET AP5G03DF RVE1.1 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change RVE1.0 2018/1/31 Initial release RVE1.1 2022/6/5 Change layout format