AP57N10P

AP57N10PT APME | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 7

Technical content

N-Channel Enhancement Mode MOSFET AP57N10P/T Rev1.0 臺灣永源微電子科技有限公司 General Description The AP57N10P/T uses advanced trench technology to provide excellent RDS(ON),device is suitable for use as a Battery protection or in other Switching application. Application Battery protection Load switch Uninterruptible power supply General Features VDS = 100V ID = 57A RDS(ON) < 20mΩ @ VGS=10V Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP57N10P TO-220-3L AP57N10P XXX YYYY 1000 AP57N10T TO-263-3L AP57N10T XXX YYYY 1000 Absolute Maximum Ratings at Tj=25℃ unless otherwise noted Parameter Symbol Value Unit Drain source voltage VDS 100 V Gate source voltage VGS ±20 V Continuous drain current1), TC=25 ℃ ID 57 A Pulsed drain current2), TC=25 ℃ ID, pulse 120 A Power dissipation3), TC=25 ℃ PD 72 W Single pulsed avalanche energy5) EAS 30 mJ Operation and storage temperature Tstg，Tj -55 to 150 ℃ Thermal resistance, junction-case RθJC 1.74 ℃/W Thermal resistance, junction-ambient4) RθJA 62 ℃/W

N-Channel Enhancement Mode MOSFET AP57N10P/T Rev1.0 臺灣永源微電子科技有限公司 Electrical Characteristics at Tj=25 ℃ unless otherwise specified Parameter Symbol Test condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS VGS=0 V, ID=250 μA 100 V Gate threshold voltage VGS(th) VDS=VGS, ID=250 μA 1.0 2.5 V Drain-source on-state resistance RDS(ON) VGS=10 V, ID=8 A 14 20 mΩ Drain-source on-state resistance RDS(ON) VGS=4.5 V, ID=6 A 18 26 mΩ Gate-source leakage current IGSS VGS=20 V 100 nA -100 Drain-source leakage current IDSS VDS=100 V, VGS=0 V 1 μA Input capacitance Ciss VGS=0 V, VDS=50 V, ƒ=1 MHz 1190.6 pF Output capacitance Coss 194.6 pF Reverse transfer capacitance Crss 4.1 pF Turn-on delay time td(on) VGS=10 V, VDS=50 V, RG=2.2 Ω, ID=10 A 17.8 ns Rise time tr 3.9 ns Turn-off delay time td(off) 33.5 ns Fall time tf 3.2 ns Total gate charge Qg ID=8 A, VDS=50 V, VGS=10 V 19.8 nC Gate-source charge Qgs 2.4 nC Gate-drain charge Qgd 5.3 nC Gate plateau voltage Vplateau 3.2 V Diode forward current IS VGS<Vth 40 Pulsed source current ISP 120 A Diode forward voltage VSD IS=8 A, VGS=0 V 1.3 V Reverse recovery time trr IS=8 A, di/dt=100 A/μs 50.2 ns Reverse recovery charge Qrr 95.1 nC Peak reverse recovery current Irrm 2.5 A Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃. 5) VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25 ℃.

N-Channel Enhancement Mode MOSFET AP57N10P/T Rev1.0 臺灣永源微電子科技有限公司

N-Channel Enhancement Mode MOSFET AP57N10P/T Rev1.0 臺灣永源微電子科技有限公司

N-Channel Enhancement Mode MOSFET AP57N10P/T Rev1.0 臺灣永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

N-Channel Enhancement Mode MOSFET AP57N10P/T Rev1.0 臺灣永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2019/1/31 Initial release