Amplifier

AP561-PCB900

TriQuint Semiconductor

0.7-2.9 GHz 8W HBT Power Amplifier

Manufacturer: TriQuint Semiconductor

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PDF pages: 17

Technical content

Applications

 Small Cells / Repeaters / DAS  3G / 4G Wireless Infrastructure  Wireless Backhaul  Portable Radios  LTE / WCDMA / CDMA

14 Pin 5x6 mm DFN Package

14PIN_Vbias NC PI N _Vpd NC NC NC NCNC RFin RFin RFin RFout/ Vcc Rfout/ Vcc Rfout/ Vcc Pin 1 Reference Mark Backside Paddle - RF/DC GND Pin Configuration Pin No. Label

1 PIN_VBIAS

4, 5, 6 RF IN 9, 10, 11 RF Output / VCC

14 PIN_VPD

Backside paddle RF / DC GND General Description The AP561 is a high dynamic range broadband powe r amplifier in a surface mount package. The single-stage amplifier has 13 dB Gain, while being able to achieve high performance for 0.7–2.9 GHz applications with up to +39 dBm of compressed 1dB power. The AP561 uses a high reliability +12V InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. The device does not require any negative bias voltage; an internal active bias allows the AP561 to operate directly off a commonly used +12V supply and has the added feature of a +5V power down control pin. RoHS-complian t 5x6mm DFN package is surface mountable to allow fo r low manufacturing costs to the end user. Product Features  700-2900 MHz  +39 dBm P1dB  +12 V Supply Voltage  -50 dBc ACLR @ 28dBm Pout  1.5% EVM @ 30 dBm Pout  13 dB Gain @ 2.6GHz  Fast Shut-Down Capability  Internal Active Bias and Temp Compensation  Lead-free / RoHS-compliant

Ordering Information

Part No. Description AP561-F 0.7-2.9 GHz 12V 8W Power Amplifier AP561-PCB900 869-894 MHz Evaluation Board AP561-PCB2140 2110-2170 MHz Evaluation Board AP561-PCB2500 2.5-2.7 GHz Evaluation Board Standard T/R size = 1000 pieces on a 7” reel

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 2 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Recommended Operating Conditions Parameter Min Typ Max Units Supply Voltage (VCC) 12.0 V TCASE −40 +85 °C Tj for >106 hours MTTF 158 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Absolute Maximum Ratings Parameter Rating Storage Temperature −55 to 150°C RF Input Power, CW, 50Ω, T=25°C +33 dBm Supply Voltage (VCC) +15 V BVcbo +35 V Power Dissipation 14 W Operation of this device outside the parameter ranges given above may cause permanent damage. Electrical Specifications Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, Temp= +25°C, using AP561-PCB2600 application circuit Parameter Conditions Min Typ Max Units Operational Frequency Range 700 2900 MHz Test Frequency 2600 MHz Output Channel Power +30 dBm Gain 13.0 dB Input Return Loss 14.5 dB Output Return Loss 6.5 dB Error Vector Magnitude See note 1. 1.7 % Collector Efficiency 16.2 % RF Switching Speed See note 2. 50 ns Output P1dB +39 dBm Operating Current, ICC 510 mA Quiescent Current, ICQ 300 mA Reference Current, IREF 10 mA Thermal Resistance, θjc Module (junction to case) 6.0 °C/W Notes: 2. Switching speed: 50% TTL to 100/0% RF. Vpd used for device power down (low=RF off).

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 3 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Device Characterization Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, ICQ = 300 mA (typ.), Temp= +25°C, calibrated to device pins 0246 Frequency (GHz) Gain / Maximum Stable Gain -40 -20 Gain (dB) DB(GMax()) AP561 DB(|S(2,1)|) AP561 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S11 Swp Max 6GHz Swp Min 0.05GHz S(1,1) AP561 1.0 1.0-1.0 10.0 10.0 -10.0 5.0 5.0 -5.0 2.0 2.0 -2.0 3.0 3.0 -3.0 4.0 4.0 -4.0 0.2 0.2 -0.2 0.4 0.4 -0.4 0.6 0.6 -0.6 0.8 0.8 -0.8 S22 Swp Max 6GHz Swp Min 0.05GHz S(2,2) AP561 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in red. S-Parameters Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, Temp= +25°C, 50 Ohm system Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang)

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 4 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com AP561-PCB900 Evaluation Board (896−894 MHz) Notes: 1. See Evaluation Board PCB Informati on section for material and stack-up. 2. All components are of 0603 size unless stated on the schematic. 3. The right edge of C20 is placed at 153 mil from the AP561 RFin pin. 4. The right edge of C21 is placed at 55 mil from the AP561 RFin pin. 5. The right edge of C24 is placed at 230 mil from the AP561 RFin pin. 6. The left edge of C22 is placed at 78 mil from the AP561 RFout pin. 7. The left edge of L2 is placed at 135 mil from the AP561 RFout pin. 8. The left edge of C23 is placed at 265 mil from the AP561 RFout pin. 9. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur. Bill of Material – AP561-PCB900 Reference Des. Value Description Manuf. Part Number N/A N/A Printed Circuit Board – FR4 U1 N/A 0.7-2.9 GHz 8W Power Amplifier TriQuint AP561-F C12 0.1 uF CAP, 0603,10%, 50V, X7R various C4, C11 1000 pF CAP, 0603, 5%, 50V, NPO various C5, C18, C7 100 pF CAP, 0603, 5%, 50V, NPO various C13 10 uF CAP, 1206, 10%, 15V, Tantalum various R1 200 Ω RES, 0805, 5%, 1/10W. Chip. various R7 330 Ω RES, 0603,5%, 1/10W, Chip various R2 10 kΩ RES, 0603, 5%,1/16W, Chip various R8 51 Ω RES, 0603, 5%, 1/16W, Chip various C1 22 pF CAP, 0603, 5%, 50V, NPO/COG various C20 10 pF CAP, 0603, 2%, ACCU-P, 50V AVX 06035J100GBSTR C21 1.5 Ω RES, 0603,5%, 1/10W, Chip various C22 3.0 pF CAP, 0603, ± 0.05pF, ACCU-P, 50V AVX 06035J3R0ABSTR C23, C24 6.8 pF CAP, 0603, ± 0.05pF, ACCU-P, 50V AVX L2 1.5 nH IND, 0603, ±0.3nH Toko LL1608-FSL1N5S L1 18 nH IND, 0805, 5%, ceramic core Coilcraft 0805HQ-18NXJC FB1 N/A Filter EMI Ferrite Bead various D1 N/A TVS Diode Array, 5V, SOT23, 2Ch On-Semiconductor SM05T1G D2 N/A Diode TVS, 13V, 400W, 5% SMA On-Semiconductor 1SMA13AT3G

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 5 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Typical Performance – AP561-PCB900 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C Parameter Typical Values Units Frequency 869 880 894 MHz Gain 15.4 15.2 15.0 dB Input Return Loss 18 15 13 dB Output Return Loss 9 10 11 dB ACLR @ 29dBm Output Power [2] -52 -52 -52 dBc IMD3 @ 29dBm Output Power [1] -46 -46.5 -47 dBc Operating Current, ICC @ 29dBm Output Power [2] 470 465 460 mA Collector Efficiency @ 29dBm Output Power [2] 14 14.5 14.7 % Output P1dB 39.2 39.1 38.9 dBm Notes: 1. IMD3 is measured with 1 MHz tone spacing. 2. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability. Performance Plots – AP561-PCB900 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C Gain (dB) Frequency (GHz) Gain vs. Frequency Temp : +25 C Vpd = 5V -20 -15 -10 Return Loss (dB) Frequency (GHz) Return Loss vs. Frequency S22 S11 Temp : +25 C Vpd = 5V -60 -55 -50 -45 -40 20 22 24 26 28 30 IMD3 (dBc) Output Power/Tone (dBm) IMD3 vs. Output Power Temp.=+25oCFrequency : 880 MHz CW Signal -60 -55 -50 -45 20 22 24 26 28 30 ACLR (dBc) Output Power (dBm) ACLR vs. Output Power vs. Frequency

869 MHz 880 MHz 894 MHz

W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability

3.84 MHz BW

Temp.=+25oC 20 22 24 26 28 30 Efficiency (%) Output Power (dBm) Efficiency vs. Output Power W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability Temp.=+25oC Frequency : 880 MHz 300 350 400 450 500 550 600 20 22 24 26 28 30 Icc (mA) Output Power (dBm) Collector Current vs. Output Power Frequency : 880 MHzW-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 6 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Bill of Material – AP561-PCB2140 Reference Des. Value Description Manuf. Part Number N/A N/A Printed Circuit Board – FR4 U1 N/A 0.7-2.9 GHz 8W Power Amplifier TriQuint AP561-F C12 0.1 uF CAP, 0603,10%, 50V, X7R various C4,C11 1000 pF CAP, 0603, 5%, 50V, NPO various C5 100 pF CAP, 0603, 5%, 50V, NPO various C13 10 uF CAP, 1206, 10%, 15V, Tantalum various R1 200 Ω RES, 0805,5%,1/10W. CHIP. various R7 280 Ω RES, 0603,5%, 1/10W, Chip various R2 10 kΩ RES, 0603, 5%,1/16W, Chip various C1, C7, C18 22 pF CAP, 0603, 5%, 50V, NPO/COG various C20 2.4 pF CAP, 0603, ± 0.05 pF, ACCU-P, 50V AVX 06035J2R4ABSTR C21 6.8 pF CAP, 0603, ± 0.1 pF, ACCU-P, 50V AVX 06035J6R8ABSTR C22 3.9 pF CAP, 0603, ± 0.05pF, ACCU-P, 50V AVX 06035J3R9ABSTR C23 2.0 pF CAP, 0603, ± 0.05pF, ACCU-P, 50V AVX 06035J2R0ABSTR L2 1.2 nH IND, 0603, ±0.3nH Toko LL1608-FSL1N2S L1 18 nH IND, 0805, 5%, ceramic core Coilcraft 0805HQ-18NXJC FB1 N/A Filter EMI Ferrite Bead various D1 N/A TVS Diode Array, 5V, SOT23, 2Ch On-Semiconductor SM05T1G D2 N/A Diode TVS, 13V, 400W, 5% SMA On-Semiconductor 1SMA13AT3G AP561-PCB2140 Evaluation Board (2110−2170 MHz) C22 C23 FB1 C18 C20 Notes: 1. See Evaluation Board PCB Informati on section for material and stack-up. 2. All components are of 0603 size unless stated on the schematic. 3. The right edge of C20 is placed at 160 mil from the AP561 RFin pin. 4. The right edge of C21 is placed at 45 mil from the AP561 RFin pin. 5. The left edge of C22 is placed at 68 mil from the AP561 RFout pin. 6. The left edge of L2 is placed at 125 mil from the AP561 RFout pin. 7. The left edge of C23 is placed at 263 mil from the AP561 RFout pin. 8. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur. 9. The primary RF microstrip line is 50 . The RF trace is cut at component C21 and L2 for this particular reference design.

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 7 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Typical Performance – AP561-PCB2140 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 370 mA (typ.), Temp=+25°C Parameter Typical Values Units Frequency 2110 2140 2170 MHz Gain 12.4 12.4 12.3 dB Input Return Loss 10 8 6.5 dB Output Return Loss 6.3 8 11 dB ACLR @ 28dBm Output Power [2] -48 -48 -48 dBc IMD3 @ 28dBm Output Power [1] -42.7 -42.3 -43.8 dBc Operating Current, ICC @ 28dBm Output Power [2] 565 550 525 mA Collector Efficiency @ 28dBm Output Power [2] 9 9.5 10 % Output P1dB 39.3 39.7 39.7 dBm Notes: 1. IMD3 is measured with 1 MHz tone spacing. 2. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability. Performance Plots – AP561-PCB2140 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 350 mA (typ.), Temp=+25°C Gain (dB) Frequency (GHz) Gain vs. Frequency Temp : +25 C Vpd = 5V -15 -12 Return Loss (dB) Frequency (GHz) Return Loss vs. Frequency S22 S11 Temp : +25 C Vpd = 5V P1dB (dBm) Frequency (GHz) P1dB vs. Frequency Temp.=+25oC -60 -55 -50 -45 -40 20 22 24 26 28 30 32 ACLR (dBc) Output Power (dBm) ACLR vs. Temperature W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability Frequency : 2.14 GHz -4 0°C +25°C +85°C -60 -55 -50 -45 -40 20 22 24 26 28 30 32 ACLR (dBc) Output Power (dBm) ACLR vs. Output Power vs. Frequency 2.11 GHz 2.14 GHz 2.17 GHz W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability Temp.=+25oC 20 22 24 26 28 30 32 Efficiency (%) Output Power (dBm) Efficiency vs. Output Power W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability Temp.=+25oC Frequency : 2.14 GHz 300 400 500 600 700 800 20 22 24 26 28 30 Icc(mA) Output Power (dBm) Collector Current vs. Output Power Frequency : 2.14 GHzW-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability -60 -55 -50 -45 -40 -35 20 22 24 26 28 30 IMD3 (dBc) Output Power/Tone (dBm) IMD3 vs. Output Power Temp.=+25oCFrequency : 2.14 GHz CW Signal

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 8 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Bill of Material – AP561-PCB2350 Reference Des. Value Description Manuf. Part Number N/A N/A Printed Circuit Board – FR4 U1 N/A 0.7-2.9 GHz 8W Power Amplifier TriQuint AP561-F C1, C7, C18 22 pF Cap, Chip, 0603, 50V, 5%, NPO various C5 100 pF Cap, Chip, 0603, 50V, 5%, NPO various C4, C11 1000 pF Cap, Chip, 0603, 50V, 5%, NPO various C12 0.1 uF Cap, Chip, 0603, 50V, 5%, NPO various C13 10 uF Cap, Tantalum, 6032, 35V, 10% various R2 10 KΩ Resistor, Chip, 0603, 5%, 1/16W various R7 280 Ω Resistor, Chip, 0603, 1%, 1/16W various R1 200 Ω Resistor, Chip, 0805, 1%, 1/16W various FB1 N/A Ferrite Bead, 100 MHz various C22 3.0 pF Cap, Chip, 0603, 50V, +/-0.05pF AVX 06035J3R0ABSTR C21 5.6 pF Cap, Chip, 0603, 50V, +/-0.05pF AVX 06035J5R6ABSTR C23 1.0 pF Cap, Chip, 0603, 50V, +/-0.05pF AVX 06035J1R0ABSTR C20 2.0 pF Cap, Chip, 0603, 50V, +/-0.05pF AVX 06035J2R0ABSTR L1 18 nH Ind, Chip, 0805, 5%, Ceramic Coilcraft 0805HQ-18NXJC R8 51 Ω Resistor, Chip, 0603, 1%, 1/16W various D1 N/A TVS Diode Array, 5V, SOT23, 2Ch On-Semiconductor SM05T1G D2 N/A Diode TVS, 33V, 400W, 5% SMA On-Semiconductor 1SMA33AT3G AP561-PCB2350 Evaluation Board (2300−2400 MHz) C20 C22 C23 FB1 C18 U 22 pF RF Output 100 pF 10K 280 SM05T1G C13 10 uF 6032 1000 pF 200 SMAJ33 Backside Paddle Ground AP561 C12 0.1 uF C20 2.0 pF C23 1.0 pF C22 3.0 pF C21 5.6 pF FB1 C11 1000 pF C18 22 pF RF Input 22 pF 18 nH (0805) Notes: 1. See Evaluation Board PCB Informati on section for material and stack-up. 2. All components are of 0603 size unless stated on the schematic. 3. The right edge of C20 is placed at 123 mil from the AP561 RFin pin. 4. The right edge of C21 is placed at 45 mil from the AP561 RFin pin. 5. The left edge of C22 is placed at 30 mil from the AP561 RFout pin. 6. The left edge of C23 is placed at 280 mil from the AP561 RFout pin. 7. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur. 8. The primary RF microstrip line is 50 . The RF trace is cut at component C21 for this particular reference design.

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 9 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Typical Performance – AP561-PCB2350 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 340 mA (typ.), Temp=+25°C Parameter Typical Values Units Frequency 2300 2350 2400 MHz Gain 13.6 13.6 13.2 dB Input Return Loss 21 23 14 dB Output Return Loss 6.6 7 7 dB EVM @ 28dBm Output Power [1] 1.6 1.4 1.1 % ACLR @ 28dBm Output Power [2] -45.8 -47.0 -48.7 dBc Operating Current, ICC @ 28dBm Output Power [2] 500 475 465 mA Collector Efficiency @ 28dBm Output Power [2] 10.7 11.1 11.5 % Output P1dB 40.1 39.5 39.0 dBm Notes: 2. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability. Performance Plots – AP561-PCB2350 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 340 mA (typ.), Temp=+25°C Gain (dB) Frequency (GHz) Gain vs. Frequency Temp : +25 C Vpd = 5V -30 -25 -20 -15 -10 Return Loss (dB) Frequency (GHz) Return Loss vs. Frequency S22 S11 Temp : +25 C Vpd = 5V P1dB (dBm) Frequency (GHz) P1dB vs. Frequency Temp.=+25oC -60 -55 -50 -45 -40 21 22 23 24 25 26 27 28 29 30 ACLR (dBc) Output Power (dBm) ACLR vs. Frequency 2.3 GHz 2.35 GHz 2.4 GHz W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability Temp.=+25oC 20 22 24 26 28 30 Efficiency (%) Output Power (dBm) Efficiency vs. Output Power W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability Temp.=+25oC Frequency : 2.35 GHz 300 350 400 450 500 550 600 20 22 24 26 28 30 Icc (mA) Output Power (dBm) Collector Current vs. Output Power Frequency : 2.35 GHzW-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 0.0 0.5 1.0 1.5 2.0 2.5 20 21 22 23 24 25 26 27 28 29 30 EVM (%) Output Power (dBm) EVM vs. Output Power 2.3GHz 2.35GHz 2.4GHz 802.16-2004 O-FDMA, 64QAM-1/2, 1024- FFT, 20 symbols and 30 subchannels. 10.2 dB PAR @ 0.01%, 3.84 MHz Carrier BW

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 10 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com AP561-PCB2500 Evaluation Board (2500−2700 MHz) C23 C24 AP561 C10 C11 C13 C14 C15 + C12 C25 C26 C27 C16 C17 C18 C20 C28 DNP J1-2 Vpd J1-3 GND J1-4 Vcc Notes: 1. See Evaluation Board PCB Informati on section for material and stack-up. 2. All components are of 0603 size unless stated on the schematic. 3. The right edge of C24 is placed at 85 mil from the AP561 RFin pin. 4. The left edge of C25 is placed at 55 mil from the AP561 RFout pin. 5. The left edge of C27 is placed at 175 mil from the AP561 RFout pin. 6. The DC bias feed is approximately a ¼ λ from output RF trace to C28. 7. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur. 8. The primary RF microstrip line is 50. The RF trace is cut at component C21 for this particular reference design. Bill of Material – AP561-PCB2500 Reference Des. Value Description Manuf. Part Number N/A N/A Printed Circuit Board – Ultralam U1 N/A 0.7-2.9 GHz 8W Power Amplifier TriQuint AP561-F C6, C16 0.1 uF CAP, 0603,10%, 50V, X7R various C7, C10, C17 1000 pF CAP, 0603, 5%, 50V, NPO various C8, C11, C18 100 pF CAP, 0603, 5%, 50V, NPO various C12 10 uF CAP, 1206, 10%, 15V, Tantalum various R1 200 Ω RES, 0805, 5%, 1/10W. Chip various R2 330 Ω RES, 0603,5%, 1/10W, Chip various R3 10 kΩ RES, 0603, 5%,1/16W, Chip various C1, C20, C28 22 pF CAP, 0603, 5%, 50V, NPO/COG various C23, C24, C25, C26 1.2 pF CAP, 0603, ± 0.05 pF, ACCU-P, 50V AVX 06035J1R2ABSTR C2 10 pF CAP, 0603, 5%, 50V, NPO various C27 0.6 pF CAP, 0603, ± 0.05 pF, ACCU-P, 50V AVX 06035J0R6ABSTR R4 3.9 Ω RES, 0603, 5%, 1/16W, Chip various D1 N/A TVS Diode Array, 5V, SOT23, 2Ch On-Semiconductor SM05T1G D2 N/A Diode TVS, 13V On-Semiconductor 1SMA33AT3G

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 11 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Performance Plots – AP561-PCB2500 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C Gain (dB) Frequency (GHz) Gain vs. Frequency Temp : +25 C -25 -20 -15 -10 Return Loss (dB) Frequency (GHz) Return Loss vs. Frequency S22 S11 Temp : +25 C P1dB (dBm) Frequency (GHz) P1dB vs. Frequency Temp.=+25oC -55 -50 -45 -40 -35 25 26 27 28 29 30 31 ACLR (dBc) Output Power (dBm) ACLR vs. Output Power vs. Frequency 2.5 GHz 2.6 GHz 2.7 GHz W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability Temp.=+25oC 25 26 27 28 29 30 31 Efficiency (%) Output Power (dBm) Efficiency vs. Output Power W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability Temp.=+25oC Frequency : 2.6 GHz 300 350 400 450 500 550 600 25 26 27 28 29 30 31 Icc (mA) Output Power (dBm) Collector Current vs. Output Power Frequency : 2.6 GHz Temp=+25 C W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 26 27 28 29 30 31 EVM (%) Output Power (dBm) EVM vs. Output Power 2.5 GHz 2.6 GHz 2.7 GHz 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and subchannels. PAR = 10.2dB @ 0.01%, 3.84 MHz Carrier BW Temp.=+25oC Typical Performance – AP561-PCB2500 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C Parameter Typical Values Units Frequency 2500 2600 2700 MHz Gain 13.1 13.0 12.4 dB Input Return Loss 13 14.5 20 dB Output Return Loss 5.8 6.5 5 dB EVM @ 30dBm Output Power [1] 2.1 1.7 1.4 % Operating Current, ICC @ 30dBm Output Power [1] 545 510 500 mA Collector Efficiency @ 30dBm Output Power [1] 15.2 16.2 16.8 % Output P1dB 39.8 39.0 38.0 dBm Notes: 2. W-CDMA 3GPP, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01%, 3.84MHz BW

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 12 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Reference Design 2500-2700 MHz: Changing Icq Biasing Configurations The AP561 can be configured to operate with lower bias current by varying the bias-adjust resistor R2. ( Error! Not a valid bookmark self-reference.) The recommended circuit configuration has the device operating with a 300 mA as the quiescent current (I CQ). This biasing level represents a tradeoff in terms of EVM and efficiency. Lowering I CQ will improve upon the efficiency of the devic e, but degrade the EVM performance. Measured data shown in the plots below represents the AP561-PCB2500 measured and configured for 2.6GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. Table 1 : Reduced Current Operation ICQ (mA) R2 (Ω) VPD (V) IREF (V) 300 330 5 2.85 280 336 5 2.81 260 340 5 2.78 240 343 5 2.76 220 348 5 2.73 200 351 5 2.71 EVM vs. Output Average Power vs. Icq Freq = 2.6 GHz, T= 25ºC 20 22 24 26 28 30 32 34 Output Power (dBm) EVM (%) 200mA 220mA 240mA 260mA 280mA 300mA Efficiency vs. Output Average Power vs Icq Freq = 2.6 GHz, T= 25ºC 20 22 24 26 28 30 32 34 Output Power (dBm) Efficiency (%) 200mA 220mA 240mA 260mA 280mA 300mA Power Gain vs. Output Average Power vs. Icq Freq = 2.6GHz, T= 25ºC 20 22 24 26 28 30 32 Output Power (dBm) Gain (dB) 200mA 220mA 240mA 260mA 280mA 300mA Power Gain vs.Frequency vs. Icq Vcc = 12V, T= 25ºC Frequency (GHz) Gain (dB) 200mA 220mA 240mA 260mA 280mA 300mA Icc vs. Output Average Power vs. Icq Freq = 2.6 GHz, T= 25ºC 200 300 400 500 600 700 20 22 24 26 28 30 32 34 Output Power (dBm) Icc (mA) 200mA 220mA 240mA 260mA 280mA 300mA

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 13 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Parameter Measurement Information: Switching Speed Test Test Conditions: Vcc = +12V at 25°C Output Power = +30dBm at 2.5 GHz Rep Rate = 1 KHz, 50% duty cycle Vpd amplitude = +5V R2 = 200Ω, C9 = 12pF (C10, C11 removed for best switching performance) Xtal Detector Voltage =15mV (square law) Test Result Waveforms: CW Si gnal Source Pu ls e Ge ner ato r Oscilloscope Diode Detector AP56x Evaluation Brd Attenuator Cable L en gth = Lx Cable Length = Lx +ve -ve Cable Length = Lx Vpd Vpd = 5V Vpd = 0V RF On Vpd = 5V Delay = 50nS RF Off Vpd = 5V Delay = 50nS RF On

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 14 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Evaluation Board Bias Procedure Following bias procedure is recommended to ensure proper functionality of AP561 in a laboratory environment. The sequencing is not required in the final system application. Bias. Voltage (V) VCC +12 VPD +5 Turn-on Sequence: 1. Attach input and output loads onto the evaluation board. 2. Turn on power supply V CC = +12V. 3. Turn on power supply V PD = +5V. 4. Turn on RF power. Turn-off Sequence: 1. Turn off RF power. 2. Turn off power supply V PD = +5V. 3. Turn off power supply V CC = +12V.

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 15 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Pin Configuration and Description Pin No. Label Description 1 PIN_VBIAS Voltage supply for active bias for the amp. Connect to same supply voltage as Vcc. 2, 3, 7, 8, 12, 13 N/C No internal connection. This pin can be grounded or N/C on PCB. Land pads should be provided for PCB mounting integrity. 4, 5, 6 RF IN RF Input. DC Voltage present, blocking cap required. Requires matching for operation. 9, 10, 11 RF Output / VCC RF Output. DC Voltage present, blocking cap required 14 PIN_VPD Reference current into internal active bias current mirror. Current into PIN_VPD sets device quiescent current. Also, can be used as on/off control. Backside Paddle RF/DC GND Multiple Vias should be employed to minimize inductance and thermal resistance. Use recommended via pattern shown under mounting configuration and ensure good solder attach for optimum thermal and electrical performance Evaluation Board PCB Information TriQuint PCB 1069110 Material and Stack-up Ultralam 1 oz. Cu bottom layer Ultralam 2000 εr=2.5 typ. 1 oz. Cu top layer 0.0147 ± 0.0015 Finished Board Thickness TriQuint PCB 1080526 Material and Stack-up FR4 1 oz. Cu bottom layer Nelco N-4000-13 εr=3.7 typ. 1 oz. Cu top layer 0.021 ± 0.002 Finished Board Thickness

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 16 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Mechanical Information Package Marking and Dimensions Marking: Part number – AP561-F Lot code – XXXX Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Except where noted, this part outline conforms to JEDEC standard MO-220, Issue E (Variation VGGC) for thermally enhanced plastic very thin fine pitch quad flat no lead package (QFN). 3. Dimension and tolerance formats conform to ASME Y14.4M-1994. 4. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012. PCB Mounting Pattern Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Use 1 oz. copper minimum for top and bottom layer metal. 3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We 4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance.

0.7-2.9 GHz 8W HBT Power Amplifier Datasheet: Rev B 09-17-13 - 17 of 17 - Disclaimer: Subject to change without notice © 2013 TriQuint www.triquint.com Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class 1A Value: Passes ≥ 250 V to < 500 V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes  1000 V to <2000 V Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 Solderability Compatible with both lead-free (260 °C max. reflow temperature) and tin/lead (245 °C max. reflow temperature) soldering processes. Contact plating: Annealed Matte Tin over Cu RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes:  Lead Free  Halogen Free (Chlorine, Bromine)  Antimony Free  TBBP-A (C 15H12Br402) Free  PFOS Free  SVHC Free MSL Rating MSL Rating: Level 3 Test: 260°C convection reflow Standard: JEDEC Standard IPC/JEDEC J-STD-020 Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Email: info-sales@triquint.com Fax: +1.503.615.8902 For technical questions and application information: Email: sjcapplications.engineering@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or li ability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS " and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant info rmation before placing orders fo r TriQuint products. The information contained herein or any use of such information does not grant, exp licitly or implicitly, to any party any patent rights, licenses, or any other inte llectual property rights, whether with r egard to such information itself o r anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life- sustaining applications, or other applications where a fa ilure would reasonably be expected to cause severe personal injury or death.

Product Information

AP561-PCB900 specifications and overview.

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0.7-2.9 GHz 8W HBT Power Amplifier

Description

0.7-2.9 GHz 8W HBT Power Amplifier

Source title AP561-PCB900 Datasheet(PDF) - TriQuint Semiconductor

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