AP561 TRIQUINT | Alldatasheet

Document overview

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Technical content

Specifications and information are subject to change without notice AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier Product Features

  • 2.3 – 2.9 GHz
  • +39 dBm P1dB
  • 13.8 dB Gain
  • 1.4% EVM @ 30 dBm Pout
  • +12 V Supply Voltage
  • Lead-free/green/RoHS-compliant 5x6 mm power DFN package

Applications

  • WiMAX CPE/BTS
  • WiBro CPE/BTS Product Description The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage amplifier has 13.8 dB gain, while being able to achieve high performance for 2.3–2.9 GHz WiMAX applications with up to 39 dBm of compressed 1dB power. The AP561 uses a high reliab ility +12V InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. The device does not require any negative bias voltage; an internal active bias allows the AP561 to operate directly off a commonly used +12V supply and has the added feature of a +5V power down control pin. RoHS-compliant 5x6mm DFN package is surface mountable to allow fo r low manufacturing costs to the end user. The AP561 is targeted for use in a balanced or single ended configuration for WiMAX or WiBro applications where high linearity and high power is required. Functional Diagram Function Pin No. RFIN 4,5,6 RFOUT 9,10,11 IREF 14 VBIAS 1 NC 2,3,7,8,12,13 Specifications Parameter Units Min Typ Max Operational Bandwidth GHz 2.3 2.9 Test Frequency GHz 2.6 Output Channel Power dBm +30 Power Gain dB 13.8 Input Return Loss dB 11 Output Return Loss dB 6.9 Error Vector Magnitude % 1.4 Operating Current, Icc mA 480 Collector Efficiency % 16.8 RF Switching Speed ns 50 Output P1dB dBm 39 Quiescent Current, Icq mA 300 Vpd(4) V +5 Vcc V +12 Notes: 1. Test conditions unless otherwise noted: T = 25ºC, Vpd = +5V, Vcc = +12, Icq = 300mA at Pout = +30 dBm and f = 2.6 GHz. 2. Using an 802.16-2004 OFDMA, 64QAM-1/2,1024-FFT, 20 symbols, 30 subchannels signal, 9.5 dB PAR @ 0.01% 3. Switching speed: 50% TTL to 100/0% RF. 4. Vpd used for device power down. (low=RF off) 5. Capable of handling 10:1 VSWR @ 12 VDC, WiMax signal, PoutAVG = 30dBm. Absolute Maximum Rating Parameter Rating Pin max (CW into 50Ω load) +33 dBm Storage Temperature -55 to +125 ºC Max Junction Temperature, TJ,max 158 ºC Thermal Resistance, ΘJC 8.4 °C / W Operation of this device above any of these parameters may cause permanent damage. Typical Performance Parameter Units Typical Test Frequency GHz 2.5 2.6 2.7 Channel Power dBm +30 +30 +30 Power Gain dB 14 13.8 13.5 Input Return Loss dB 11 11 14 Output Return Loss dB 6.2 6.9 5.7 Error Vector Magnitude % 2.2 1.4 2.1 Operating Current, Icc mA 510 480 490 Collector Efficiency % 15.8 16.8 16 Output P1dB dBm 40 39 38 Quiescent Current, Icq mA 300 Vpd V +5 Vcc V +12

Ordering Information

Part No. Description AP561-F WiMAX 12V 8W HBT Amplifier AP561-PCB2500 2.5-2.7 GHz Fully Assembled Evaluation Board Standard T/R size = 500 pieces on a 7” reel.

Specifications and information are subject to change without notice AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier Application Circuit PC Board Layout Vpd GND Vcc Circuit Board Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz copper, εr = 2.45, Microstrip line details: width = .042”, spacing = .050” Baseplate Configuration Notes: 1. Please note that for reliable ope ration, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. 2. The area around the module underneath the PCB s hould not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the labor atory, the power-on sequencing is recommended. Evaluation Board Bias Procedure Following bias procedure is recommended to ensure proper functionality of AP561 in a laboratory environment. The sequencing is not required in the final system application. Bias. Voltage (V) Vcc +12 Vpd +5 Turn-on Sequence: 1. Attach input and output lo ads onto the evaluation board. 2. Turn on power supply Vcc = +12V. 3. Turn on power supply Vpd = +5V. 4. Turn on RF power. Turn-off Sequence: 1. Turn off RF power. 2. Turn off power supply Vpd = +5V. 3. Turn off power supply Vcc = +12V.

Specifications and information are subject to change without notice AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier 2.5-2.7 GHz Application Circuit (AP561-PCB2500) Typical O-FDMA Performance at 25°C Frequency (GHz) 2.5 2.6 2.7 Units Channel Power +30 +30 +30 dBm Power Gain 14 13.8 13.5 dB Input Return Loss 11 11 14 dB Output Return Loss 6.2 6.9 5.7 dB EVM 2.2 1.4 2.1 % Operating Current, Icc 510 480 490 mA Collector Efficiency 15.8 16.8 16 % Output P1dB 40 39 38 dBm Quiescent Current, Icq 300 mA Vpd +5 V Vcc +12 V C10 C13 C16 C17 C14 C11 C15 C18 C20 C12 C21 C24 C26 C25 C28 C27 C23C2,R4 Notes: The primary RF microstrip line is 50 Ω. Components shown on the silkscreen but not on the schematic are not used. 1. The edge of C23 is placed right next to C24. 2. The edge of C24 is placed at 85mil from AP561 RFout pin. 3. The edge of C25 is placed at 56mil from AP561 RFin pin. 4. The edge of C26 is placed right next to C25. 5. The edge of C27 is placed 55mil from the edge of C26. 2.5-2.7 GHz Application Circuit Performance Plots 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels. 9.5 dB PAR @ 0.01%, 5 MHz Carrier BW Gain vs. Frequency T=25°C Frequency (GHz) Gain (dB) Return Loss T=25°C -25 -20 -15 -10 Frequency (GHz) S11, S22 (dB) S11 S22 Current vs Output Average Power vs. Frequency T=25°C 300 350 400 450 500 550 600 20 22 24 26 28 30 32 Output Power (dBm) Collector Current (mA) 2.5 GHz 2.6 GHz 2.7 GHz Efficiency vs Output Average Power vs. Frequency T=25°C 20 22 24 26 28 30 32 Output Power (dBm) Collector Efficiency (%) 2.5 GHz 2.6 GHz 2.7 GHz EVM vs. Output Average Power vs. Frequency T=25°C 20 22 24 26 28 30 32Output Power (dBm) EVM (%) 2.5 GHz 2.6 GHz 2.7 GHz Power Gain vs Temperature Pout = 30 dBm - 5 0 - 3 0 - 1 0 1 03 05 07 09 0 Temperature (°C ) Gain (dB) 2.5 GHz 2.6 GHz 2.7 GHz

Specifications and information are subject to change without notice AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier Current vs Output Average Power vs Temperature f=2.6 GHz 300 350 400 450 500 550 600 20 22 24 26 28 30 32 Output Power (dBm) Icc (mA) +25ºC -40ºC +85ºC Efficiency vs Output Average Power vs Temperature f=2.6 GHz 20 22 24 26 28 30 32 Output Power (dBm) Efficiency +25ºC -40ºC +85ºC EVM vs. Output Average Power vs Temperature f=2.6 GHz 20 22 24 26 28 30 32Output Power (dBm) EVM (%) +25ºC -40ºC +85ºC

Specifications and information are subject to change without notice AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier 2.3-2.9 GHz Application Circuit Typical O-FDMA Performance at 25°C Frequency (GHz) 2.3 2.6 2.9 Units Channel Power +30 +30 +30 dBm Power Gain 13 12.7 13.2 dB Input Return Loss 17 14 16 dB Output Return Loss 3.3 4.0 5.9 dB EVM 1.9 2.5 2.4 % Operating Current, Icc 630 640 570 mA Collector Efficiency 13 12.7 14.3 % Output P1dB 40 39 39 dBm Quiescent Current, Icq 300 mA Vpd +5 V Vcc +12 V C10 C13 C16 C17 C14 C11 C15 C18 C20 C12 C21 C28 C26 C24 C23 C29 C27 Notes: The primary RF microstrip line is 50 Ω. Components shown on the silkscreen but not on the schematic are not used. 1. The edge of C26 is placed 10mil from C24. 2. The edge of L4 is placed right next to C26. 3. The edge of C23 is placed at 0mil from AP561 RFout pin. 4. The edge of C24 is placed right next to C23. 5. The center of C27 is placed at 50mil from AP561 RFin pin. 6. The edge of C28 is placed right next to C27. 2.3-2.9 GHz Application Circuit Performance Plots 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels. 9.5 dB PAR @ 0.01%, 5 MHz Carrier BW Gain vs. Frequency T=25°C Frequency (GHz) Gain (dB) Return Loss T=25°C -25 -20 -15 -10 Frequency (GHz) S11, S22 (dB) S11 S22 Current vs Output Average Power vs. Frequency T=25°C 300 400 500 600 700 800 20 22 24 26 28 30 32 Output Power (dBm) Collector Current (mA) 2.3 GHz 2.6 GHz 2.9 GHz Efficiency vs Output Average Power vs. Frequency T=25°C 20 22 24 26 28 30 32 Output Power (dBm) Collector Efficiency (%) 2.3 GHz 2.6 GHz 2.9 GHz EVM vs. Output Average Power vs. Frequency T=25°C 20 22 24 26 28 30 32Output Power (dBm) EVM (%) 2.3 GHz 2.6 GHz 2.9 GHz

Specifications and information are subject to change without notice AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier 2.3 – 2.9 GHz Application Note: Changing Icq Biasing Configurations The AP561 can be configured to operate with lower bias current by varying the bias-adjust resistor R2. (Table 1) The recommended circuit configurations shown previously in this datasheet have the device operating with a 300 mA as the quiescent current (I CQ). This biasing level represents a tradeoff in terms of EVM and efficiency. Lowering I CQ will improve upon the efficiency of the devi ce, but degrade the EVM performance. Measured data shown in the plots below represents the AP561 measured and configured for 2.4 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. Table 1 : Reduced Current Operation Icq (mA) (Ω) VPD (V) IREF (V) 300 330 5 2.85 280 336 5 2.81 260 240 5 2.78 240 343 5 2.76 220 348 5 2.73 200 351 5 2.71 EVM vs. Output Average Power vs. Icq f=2.4 GHz 28 29 30 31 32 Pout (dBm) EVM (%) 200mA 220mA 240mA 260mA 280mA 300mA Efficiency vs. Output Average Power vs Icq f=2.4 GHz, 28 29 30 31 32 Pout (dBm) Efficiency (%) 200mA 220mA 240mA 260mA 280mA 300mA r

Specifications and information are subject to change without notice AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier Parameter Measurement Information Switching Speed Test Test Conditions: Vcc = +12V at 25oC Output Power = +30dBm @ 2.5 GHz Rep Rate = 1 KHz, 50% duty cycle Vpd amplitude = +5V R2=200 ohms, C9=12pF (C10, C11 removed for best switching performance) Xtal Detector Voltage =15mV (square law) Test Result Waveforms: CW Signal Source Pulse Generator Oscilloscope Diode Detector AP56x Evaluation Brd Attenuator Cable Length = Lx Cable Length = Lx +ve -ve Cable Length = Lx Vpd Vpd = +5V Vpd = +0V RF On Vpd = +5V Delay = 50nS RF On Vpd = +5V Delay = 50nS RF Off

Specifications and information are subject to change without notice AP561 2.3-2.9 GHz WiMAX 8W Power Amplifier Mechanical Information This package is lead-free/Green/RoHS-compliant. The plating material on the pins is annealed matte tin over copper. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. Outline Drawing Mounting Configuration / Land Pattern Product Marking The component will be laser marked with a “AP561-F” product label with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the “Application Notes” section. Functional Pin Layout Pin Function

1 VBIAS

4, 5, 6 RF IN 9, 10, 11 RF Output / Vcc

14 IREF

ESD Rating: Class 1A Value: Passes 250V to <500V Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 ESD Rating: Class IV Value: Passes 1000V to <2000V Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C101 MSL Rating: Level 3 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020