AP55T10GI-HF DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V =100V,I =100A,R <13m Ω@V =10V DS D DS(ON) GS 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 100 AContinuous Drain Current-TC=100℃ 80 Pulsed Drain Current2 380 EAS Single Pulse Avalanche Energy3 800 mJ PD Power Dissipation4 200 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 0.75 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 --- G D S All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 110 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2 3 4 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=40A --- 9.9 13 mΩ VGS=4.5V,ID=A --- --- --- GFS Forward Transconductance VDS=50V, ID=40A 100 --- --- S Dynamic Characteristics Ciss Input Capacitance --- 4800 --- Coss Output Capacitance VDS=50V, VGS=0V, f=1MHz --- 304 --- pF Crss Reverse Transfer Capacitance --- 150 --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V, ID=40A, RGEN=2.5 Ω.VGS=10V --- 15 --- ns tr Rise Time --- 50 --- ns td(off) Turn-Off Delay Time --- 40 --- ns tf Fall Time --- 55 --- ns Qg Total Gate Charge --- 85 --- nC Qgs Gate-Source Charge VGS=10V, VDS=80V, --- 18 --- nC Qgd Gate-Drain “Miller” Charge ID=40A --- 28 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=40A --- --- -1.2 V All d ata sheet.com
www.doingter.cn — 5 — Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance 0086-0755-8278-9056 r(t),Normalized Effective Transient Thermal Impedance All d ata sheet.com