AP55T10GH-HF DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=100V,ID=60A,RDS(ON)<12mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 60 A Pulsed Drain Current2 180 PD Power Dissipation3,TC=25℃3 107 W EAS Single pulsed avalanche energy4) 65 MJ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 1.17 ℃/W RƟJA Thermal Resistance,Junction to Ambient4 62 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Ma x Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 100 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- 100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.5 --- 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 9 12 mΩ VGS=4.5V,ID=10A --- 12 14 Rg Gate resistance f= 1 MHz, Open drain 5.5 --- Ω Dynamic Characteristics Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 1998.1 --- pFCoss Output Capacitance --- 321.7 --- Crss Reverse Transfer Capacitance --- 7.1 --- Switching Characteristics td(on) Turn-On Delay Time VDD=50V, ID=25A, VGS=10V,RGEN=2Ω --- 22.1 --- ns tr Rise Time --- 5.2 --- ns td(off) Turn-Off Delay Time --- 44 --- ns tf Fall Time --- 8.4 --- ns Qg Total Gate Charge VGS=10V, VDS=50V, ID=25A --- 28.9 --- nC Qgs Gate-Source Charge --- 6 --- Vplateau Gate plateau voltage 3.7 --- nC All d ata sheet.com
www.doingter.cn — 3 — ID, Drain current ( A ) ID, Drain current(A) Qgd Gate-Drain “Miller” Charge --- 6.8 --- Drain-Source Diode Characteristics IS Diode forward current VGS<Vth --- --- 60 AISP Pulsed source current --- --- 180 VSD Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.3 V lmm Peak reverse recovery current IS=25 A, di/dt=100 A/μs 6.4 --- A trr Reverse Recovery Time 102.9 Ns qrr Reverse Recovery Charge 379 --- nc Notes: 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) VDD=50 V, RG=25 Ω, L=0.3 mH, starting Tj=25° C . 4 board with 2oz. Copper, in a 5) The value of RθJA is measured with the device mounted on 1 in 2 F R -still air environment with Ta=25 °C. Typical Characteristics： (TC=25℃ unless otherwise noted) 200 150 100 Tj = 25 ℃VGS= 10 V V = 6 V GS VGS= 5.5 V VGS= 5 V VGS= 4.5 V VGS= 4 V VGS= 3.5 V 0 3 6 9 12 VDS, Drain-source voltage (V) 15 VDS= 10 V Tj = 25 ℃ 100 2 4 6 8 10 VGS, Gate-source voltage(V) Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics All d ata sheet.com