AP55N10CP APME | Alldatasheet
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100V N-Channel Enhancement Mode MOSFET AP55N10CP Rev1.0 臺灣永源微電子科技有限公司
Description
The AP55N10CP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS =100V,ID =55A RDS(ON) <21mΩ@ VGS=10V Application Power amplifier motor drive Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP55N10CP TO-220-3L AP55N10CP 1000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage 100 V ID Continuous Drain Current 57 A IDM Pulsed Drain Current 471 A VGSS Gate-Source Voltage ±20 V EAS Single Pulse Avalanche Energy 1943 mJ IAR Avalanche Current 32 A EAR Repetitive Avalanche Energy 36 mJ PD Power Dissipation (TC = 25º C) 200 W TJ, Tstg Operating Junction and Storage Temperature Range -55 to175 ºC RthJC Thermal Resistance, Junction-to-Case 0.75 ℃/W RthJA Thermal Resistance, Junction-to-Ambient 62 ℃/W
100V N-Channel Enhancement Mode MOSFET AP55N10CP Rev1.0 臺灣永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test Conditions Min Type Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µ A 100 -- -- V IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V, TJ = 25º C -- -- 1 μA VDS = 80V, VGS = 0V, TJ = 125º C -- -- 100 IGSS Gate-Source Leakage VGS = +20V,VDS=0V -- -- 100 nA VGS=-20V, VDS=0V -- -- -100 VGS(th) Gate-Source Threshold Voltage VDS = VGS, ID = 250µ A 2.0 -- 4.0 V RDS(on) Drain-Source On-Resistance (Note3) VGS = 10V, ID = 28A -- 17 21 mΩ gfs Forward Transconductance VDS = 10V, ID = 28A 85 S Ciss Input Capacitance VGS = 0V, VDS = 25V, f = 1.0MHz -- 2700 -- pF Coss Output Capacitance -- 610 -- Crss Reverse Transfer Capacitance -- 260 -- Qg Total Gate Charge VDD =50V, ID = 28A, VGS = 0 to 10V -- 60 -- nC Qgs Gate-Source Charge -- 15 -- Qgd Gate-Drain Charge -- 45 -- td(on) Turn-on Delay Time VDD = 50V, ID =28A, VGS= 10V RG = 2.5 Ω -- 20 -- ns tr Turn-on Rise Time -- 28 -- td(off) Turn-off Delay Time -- 65 -- tf Turn-off Fall Time -- 15 -- IS Continuous Body Diode Current TC = 25 º C -- -- 57 A ISM Pulsed Diode Forward Current -- -- 230 VSD Body Diode Voltage TJ = 25º C, ISD = 28A, VGS = 0V -- -- 1.5 V trr Reverse Recovery Time VGS = 0V,IS = 28A, diF/dt =100A /μs -- 195 -- ns Qrr Reverse Recovery Charge -- 107 -- μC Notes 1、Repetitive Rating: Pulse width limited by maximum junction temperature 2、IAS = 30A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 º C 3、Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
100V N-Channel Enhancement Mode MOSFET AP55N10CP Rev1.0 臺灣永源微電子科技有限公司
100V N-Channel Enhancement Mode MOSFET AP55N10CP Rev1.0 臺灣永源微電子科技有限公司
100V N-Channel Enhancement Mode MOSFET AP55N10CP Rev1.0 臺灣永源微電子科技有限公司
100V N-Channel Enhancement Mode MOSFET AP55N10CP Rev1.0 臺灣永源微電子科技有限公司
100V N-Channel Enhancement Mode MOSFET AP55N10CP Rev1.0 臺灣永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applicatio ns. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an indep endent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconducto r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designi ng equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the ev ent that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the e xport license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume pro duction. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information de scribed or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.
100V N-Channel Enhancement Mode MOSFET AP55N10CP Rev1.0 臺灣永源微電子科技有限公司 Edition Date Change Rve1.0 2019/12/1 Initial release Copyright Attribution“APM-Microelectronice”