AP50N06HD APME | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

60V N-Channel Enhancement Mode MOSFET AP50N06HD REV1.0 永源微電子科技有限公司

Description

The AP50N06HD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =58A RDS(ON) < 16mΩ @ VGS=10V （Type:11mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP50N06HD TO-252-3 AP50N06HD XXXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 58 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 30 A IDM Pulsed Drain Current2 90 A EAS Single Pulse Avalanche Energy3 39.2 mJ IAS Avalanche Current 38 A PD@TC=25℃ Total Power Dissipation4 45 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJC Thermal Resistance Junction-Case1 2.8 ℃/W

60V N-Channel Enhancement Mode MOSFET AP50N06HD REV1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 2.0 3.0 4.0 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V 1.0 μA RDS(ON) Drain-Source On-State Resistancea VGS=10V, ID= 20A 11 16 mΩ Qg Total Gate Charge VDD=48V, VGS=10V, ID=50A 37.1 nC Qg Total Gate Charge VDD=48V, VGS=4.5V, ID=50A 10.9 Qgs Gate-Source Charge 14.3 Qgd Gate-Drain Charge 8.3 Ciss Input capacitance VDS=15V, VGS=0V, f=1MHz 2286 pF Coss Output Capacitance 172 Crss Reverse Transfer Capacitance 53 td(on) Turn-On Delay Time VDS=30V, VGS=10V, RG=3.6Ω, RL=30Ω ID=1A 27.7 ns tr Turn-On Rise Time 5.1 td(off) Turn-Off Delay Time 54.2 tf Turn-Off Fall Time 5.5 VSD Diode Forward Voltage IS=50A, VGS=0V 1.0 1.2 V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A 4、The power dissipation is limited by 150℃ junction temperature The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation

60V N-Channel Enhancement Mode MOSFET AP50N06HD REV1.0 永源微電子科技有限公司 Typical Characteristics Figure.1 On Resistance Vs Junction Temperature Figure.2 On-Resistance Vs.Drain Current Figure.3 Capacitance Figure.4 On-Resistance Vs. Gate-to-Sourece Voltage Figure.5 Threshold Voltage Figure.6 On-Region Characteristics

60V N-Channel Enhancement Mode MOSFET AP50N06HD REV1.0 永源微電子科技有限公司 Figure.7 Gate Charge Figure.8 Body-diode Characteristice Figure.9 Safe Operating Area Figure.10 Normalized Maximum Transient Thermal Impedance

60V N-Channel Enhancement Mode MOSFET AP50N06HD REV1.0 永源微電子科技有限公司 Package Mechanical Data：TO-252-3L Dimensions Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D TO-252 Reel Spectification-TO-252 W EF D0 P0 P2 T A A A A B B B B Dimensions Millimeters InchesRef. W E F T 15.90 1.65 7.40 1.40 16.10 1.85 7.60 1.60 0.626 0.065 0.291 0.055 0.634 0.073 0.299 0.063 1.40 1.60 7.90 10.45 10.60 0.411 0.417 0.24 0.27 0.009 0.011 0.055 0.063 3.90 4.10 6.90 0.271 10P0 0.154 0.161 8.10 0.311 0.319 1.90 2.10 0.075 0.083 0.10 0.004 40.00 1.575 2.78 0.109 Φ329 Φ13 16.00 1.75 7.50 1.50 1.50 4.00 8.00 2.00 10.50 0.630 0.069 0.295 0.059 0.059 0.157 0.315 0.079 0.413 6.85 7.00 2.68 2.88 0.270 0.276 0.105 0.113 39.80 40.20 1.567 1.583

60V N-Channel Enhancement Mode MOSFET AP50N06HD REV1.0 永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

60V N-Channel Enhancement Mode MOSFET AP50N06HD REV1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change REV1.0 2023/9/31 Initial release