AP4V02LI APME | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 7
Technical content
-20V P+P-Channel Enhancement Mode MOSFET AP4V02LI RVE1.0 永源微電子科技有限公司
Description
TheAP4V02LIusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasaBatteryprotection orinotherSwitchingapplication. General Features VDS =-20V ID =-4.5A RDS(ON) <60mΩ@VGS=4.5V（Type：49mΩ） Application Lithiumbatteryprotection Wirelessimpact Mobilephonefastcharging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP4V02LI SOT23-6L AP4V02LI 3000 Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-SourceVoltage -20 V VGS Gate-SourceVoltage ±12 V ID@TA=25℃ ContinuousDrainCurrent,-VGS @-10V1 -4.5 A ID@TA=70℃ ContinuousDrainCurrent,-VGS @-10V1 -3.9 A IDM PulsedDrainCurrent2 -14 A PD@TA=25℃ TotalPower Dissipation4 1.5 W TSTG StorageTemperatureRange -55to150 ℃ TJ OperatingJunctionTemperatureRange -55to150 ℃ RθJA ThermalResistanceJunction-Ambient1 85 ℃/W RθJC ThermalResistanceJunction-Case1 25 ℃/W
-20V P+P-Channel Enhancement Mode MOSFET AP4V02LI RVE1.0 永源微電子科技有限公司 Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-SourceBreakdownVoltage VGS=0V,ID=-250uA -20 -22 --- V RDS(ON) StaticDrain-SourceOn-Resistance2 VGS=-4.5V,ID=-4.0A --- 49 60 mΩ VGS=-2.5V,ID=-3.0A --- 64 80 VGS(th) GateThresholdVoltage VGS=VDS ,ID =-250uA -0.45 -0.6 -1.0 V IDSS Drain-SourceLeakageCurrent VDS=-20V,VGS=0V,TJ=25℃ --- --- -1 uA VDS=-20V,VGS=0V,TJ=55℃ --- --- -5 IGSS Gate-SourceLeakageCurrent VGS=±12V,VDS=0V --- --- ±100 nA gfs ForwardTransconductance VDS=-5V,ID=-3A --- 12.2 --- S Qg TotalGateCharge(-4.5V) VDS=-15V,VGS=-4.5V,ID=-3A --- 10.1 --- nCQgs Gate-SourceCharge --- 1.21 --- Qgd Gate-DrainCharge --- 2.46 --- Td(on) Turn-OnDelayTime VDD=-10V,VGS=-4.5V, RG=3.3Ω ID=-3A --- 5.6 --- ns Tr RiseTime --- 32.2 --- Td(off) Turn-OffDelayTime --- 45.6 --- Tf FallTime --- 29.2 --- Ciss InputCapacitance VDS=-15V,VGS=0V,f=1MHz --- 677 --- pFCoss OutputCapacitance --- 82 --- Crss ReverseTransferCapacitance --- 73 --- IS ContinuousSourceCurrent1,4 VG=VD=0V,ForceCurrent --- --- -3 A VSD DiodeForwardVoltage2 VGS=0V,IS=-1A,TJ=25℃ --- --- -1 V Note: 1、Thedatatestedbysurfacemountedona1inch2FR-4boardwith2OZcopper. 2、Thedatatestedbypulsed,pulsewidth△ 300us,dutycycle△ 2% 3、Thepowerdissipationislimitedby150℃ junctiontemperature 4、ThedataistheoreticallythesameasID andIDM ,inrealapplications,shouldbelimitedbytotalpowerdissipation.
-20V P+P-Channel Enhancement Mode MOSFET AP4V02LI RVE1.0 永源微電子科技有限公司 Typical Characteristics
-20V P+P-Channel Enhancement Mode MOSFET AP4V02LI RVE1.0 永源微電子科技有限公司
-20V P+P-Channel Enhancement Mode MOSFET AP4V02LI RVE1.0 永源微電子科技有限公司 Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 C 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950（BSC） 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0 8 0 8
-20V P+P-Channel Enhancement Mode MOSFET AP4V02LI RVE1.0 永源微電子科技有限公司
-20V P+P-Channel Enhancement Mode MOSFET AP4V02LI RVE1.0 永源微電子科技有限公司 Copyright Attribution“APM-Microelectronice” Edition Date Change Rve1.0 2022/1/31 Initial release