AP4951GM-HF DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-60V,ID=-4A,RDS(ON)<100mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current1 -4 A Continuous Drain Current-Tc=100℃ -3.1 Pulsed Drain Current2 -20 A PD Power Dissipation4 3.1 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient1 30 ℃/ W D D D S D S S G All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TJ=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-48V --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA -1 --- -2.5 V RDS(ON) Drain-Source On Resistance2 VGS=-10V,ID=-4A --- 80 100 mΩ VGS=-4.5V,ID=-3A --- 102 130 GFS Forward Transconductance VDS=-5V, ID=-4A --- 10 --- S Dynamic Characteristics Ciss Input Capacitance --- 930 1120 Coss Output Capacitance VDS=-30V, VGS=0V, f=1MHz --- 85 --- pF Crss Reverse Transfer Capacitance --- 35 --- Switching Characteristics, td(on) Turn-On Delay Time VDD=-30V, VGS=-10V ,RGEN=3Ω --- 8 --- ns tr Rise Time --- 3.8 --- ns td(off) Turn-Off Delay Time --- 31.5 --- ns tf Fall Time --- 7.5 --- ns Qg Total Gate Charge --- 16 20 nC Qgs Gate-Source Charge VDS=-30V , VGS=-10V , --- 2.5 --- nC Qgd Gate-Drain Charge ID=-4A --- 3.2 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=-1A --- --- 10 V All d ata sheet.com
www.doingter.cn — 5 — 0.1 0.01 Pulse Width (s) 1 10 100 1000 Figure 11: Normalized Maximum Transient Thermal Impedance 0086-0755-8278-9056 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40°C/W In descending order PD Ton T Single Pulse ZJA Normalized Transient Thermal Resistance All d ata sheet.com