AP42T03GP DOINGTER | Alldatasheet
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www.doingter.cn —— 1 Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=30V,ID=30A,RDS(ON)<22mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 30 AContinuous Drain Current-TC=100℃ 16 Pulsed Drain Current2 92 EAS Single Pulse Avalanche Energy3 36 mJ PD Power Dissipation,TC=25℃ 37 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 4 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 --- All d ata sheet.com
www.doingter.cn —— 2 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=30V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.5 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 18 22 mΩ VGS=4.5V,ID=15A --- 28 40 GFS Forward Transconductance VDS=5V, ID=6A --- 10 --- S Dynamic Characteristics Ciss Input Capacitance --- 540 --- Coss Output Capacitance VDS=15V, VGS=0V, f=1MHz --- 59 --- pF Crss Reverse Transfer Capacitance --- 51 --- Switching Characteristics td(on) Turn-On Delay Time VDD=15V, VGS=10V,RGEN=3 Ω --- 3 --- ns tr Rise Time --- 10 --- ns td(off) Turn-Off Delay Time --- 12 --- ns tf Fall Time --- 3 --- ns Qg Total Gate Charge --- 12 --- nC Qgs Gate-Source Charge VGS=10V, VDS=15V, --- 2 --- nC Qgd Gate-Drain “Miller” Charge ID=3.6A --- 4 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=20A --- --- 1.2 V All d ata sheet.com
Figure 11. Normalized Maximum Transient Thermal Impedance