AP4232BGM-HF DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — Description： This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) V DS=30V,ID=7A,RDS(ON)<23mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current- 7 AContinuous Drain Current-TC=100℃ 5.2 Pulsed Drain Current 33 EAS Single Pulse Avalanche Energy 32 mJ PD Power Dissipation 2.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJL Maximum Junction-to-Lead --- ℃/W RƟJA Thermal Resistance,Junction to Ambient --- All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=30V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.6 3 V RDS(ON) Drain-Source On Resistance VGS=4.5V,ID=7A --- 18 23 mΩ GFS Forward Transconductance VDS=5V, ID=5A 3 5.8 --- S Dynamic Characteristics4 Ciss Input Capacitance --- 560 --- Coss Output Capacitance VDS=15V, VGS=0V, f=1MHz --- 125 --- pF Crss Reverse Transfer Capacitance --- 90 --- Switching Characteristics4 td(on) Turn-On Delay Time VDS=15V, RL =15Ω RGEN=2.5Ω. VGS=10V,, ID=5.5A --- 10 --- ns tr Rise Time --- 4 --- ns td(off) Turn-Off Delay Time --- 27 --- ns tf Fall Time --- 5 --- ns Qg Total Gate Charge --- 16 --- nC Qgs Gate-Source Charge VGS=4.5V, VDS=10V, --- 1.7 --- nC Qgd Gate-Drain “Miller” Charge ID=7A --- 6.8 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage1 VGS=0V,IS=1A --- 0.78 1.2 V lsD Source-Drain Current(Body Diode) --- --- 5.8 A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature. All d ata sheet.com
www.doingter.cn — 3 — Typical Characteristics： (TC=25℃ unless otherwise noted) Figure1. Power Dissipation Figure2. Drain Current TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure3. Output Characteristics Figure4. Transfer Characteristics Vds Drain-Source Voltage (V) Vgs Gate-Source Voltage (V) Figure5. Capacitance Figure6. RDS(ON) vs Junction Temperature Power Dissipation(W) Drain Current (A) All d ata sheet.com
Figure7. Max BVDSS vs Junction Temperature Figure8. VGS(th) vs Junction Temperature Figure9. Gate Charge Waveforms Figure10. Maximum Safe Oper Figure11. Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec) www.doingter.cn — 4 — 0086-0755-8278-9056 R(t), Normalized Effective Transient Thermal Impedance All d ata sheet.com