AP4226BGM-HF

AP4226BGM-HF DOINGTER | Alldatasheet

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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=10A,RDS(ON)<10mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra low RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TA=25℃ )1 10 A Drain Current – Continuous (TA=100℃ ) 1 7 IDM Drain Current – Pulsed2 36 EAS 24.2 mj IAS 22 A PD Power Dissipation (TA=25℃ )4 1.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case1 25 ℃/W RƟJA Thermal Resistance,Junction to Ambient1 85 Single Pulse Avalanche Energy3 Avalanche Current D2S1 AP4226BGM-HF All d ata sheet.com

www.doingter.cn — 2 — Electrical Characteristics：(TA=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Drain-Source Leakage Current VDS=150V , VGS=0V --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.5 2.5 V RDS(ON) Static Drain-Source On Resistance2 VGS=10V,ID=8A --- 9 10 mΩ VGS=4.5V,ID=6A 12 18 GFS Forward Transconductance VDS=5V, ID=8A --- 24 --- S Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 940 1316 pF Coss Output Capacitance --- 131 183 Crss Reverse Transfer Capacitance --- 109 153 Switching Characteristics td(on) Turn-On Delay Time VDS=15V, , RGEN=1.5Ω, VGS=10V ID=8A --- 4.2 8.4 ns tr Rise Time --- 8.2 15 ns td(off) Turn-Off Delay Time --- 31 62 ns tf Fall Time --- 4 8 ns Qg Total Gate Charge VGS=4.5V, VDS=15V, ID=8A --- 9.63 13.5 nC Qgs Gate-Source Charge --- 3.88 5.4 nC Qgd Gate-Drain “Miller” Charge --- 3.44 4.8 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=1A,TJ=25℃ --- --- 1 V --- AP4226BGM-HF All d ata sheet.com

ww.doingter.cn — 3 IS Continuous Source Current1.5 --- --- 9 A Trr Body Diode Reverse Recovery Time --- 8 --- Ns Qrr Body Diode Reverse Recovery Charge --- 2.9 --- Nc Notes: Typical Characteristics： ISM Pulsed Source Current2,5 VG=VD=0V , Force Current --- --- IF=8A , dI/dt=100A/µs , TJ=25℃ 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 0 0.5 1 1.5 2 2.5 3 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=8A 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 2.5 7.5 0 5 10 15 20 QG , Total Gate Charge (nC) VGS Gate to Source Voltage (V) ID=8A VDS=15V Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ SD Fig.3 Forward Characteristics of Reverse AP4226BGM-HF All d ata sheet.com

0.5 1.5 -50 0 50 100 150 TJ ,Junction Temperature ( ℃) Normalized VGS(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ 100 1000 10000 1 5 9 13 17 21 25VDS Drain to Source Voltage(V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 VDS (V) ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.01 0.1 Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TA+PDMXRθJA TON T Fig.8 Safe Operating AreaFig.7 Capacitance AP4226BGM-HF 1010.10.010.0010.0001 0.001 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance www.doingter.cn — 4 — 0086-0755-8278-9056