AP40N03S APME | Alldatasheet
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30V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司
Description
The AP40N03S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =40 A RDS(ON) < 9mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP40N03S SOP-8 AP40N03S XXXX YYYY 3000 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 40 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 8.2 A IDM Pulsed Drain Current2 82 A EAS Single Pulse Avalanche Energy3 61 mJ IAS Avalanche Current 35 A PD@TA=25℃ Total Power Dissipation4 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 85 ℃/W RθJC Thermal Resistance Junction-Case1 36 ℃/W AP40N03S RVE1.0
30V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.027 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=10A --- 7.5 9 mΩ VGS=4.5V , ID=8A --- 11 14 VGS(th) Gate Threshold Voltage 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- -5.8 --- mV/℃ IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 5.8 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.2 3.8 Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=10A --- 12.6 17.6 nC Qgs Gate-Source Charge --- 4.2 5.9 Qgd Gate-Drain Charge --- 5.1 7.1 Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3.3 ID=10A --- 6.2 12.4 ns Tr Rise Time --- 59 106 Td(off) Turn-Off Delay Time --- 27.6 55 Tf Fall Time --- 8.4 16.8 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1317 1845 pF Coss Output Capacitance --- 163 228.2 Crss Reverse Transfer Capacitance --- 131 183.4 IS Continuous Source Current1,5 VG=VD=0V , Force Current --- --- 10.3 A ISM Pulsed Source Current2,5 --- --- 42 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , TJ=25℃ --- 12.5 --- nS Qrr Reverse Recovery Charge --- 5 --- nC Note : 1 .The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3 .The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=35A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. AP40N03S RVE1.0
30V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司 0 0.5 1 1.5 2 2.5 3 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V 2 4 6 8 10 VGS (V) RDSON (mΩ) ID=10A 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) IS -Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics of reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ AP40N03S RVE1.0
30V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司 100 1000 10000 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 VDS (V) ID (A) TA=25oC Single Pulse 100ms 100us 1ms 10ms DC 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS=
2 L x IAS
Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform AP40N03S RVE1.0
30V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司 AP40N03S RVE1.0
30V N-Channel Enhancement Mode MOSFET 臺灣永源微電子科技有限公司 Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applicatio ns. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an indep endent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconducto r products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designi ng equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the ev ent that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the e xport license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information st orage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume pro duction. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information de scribed or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. AP40N03S RVE1.0